scholarly journals Calculations of exchange interaction in the impurity band of two-dimensional semiconductors with out-of-plane impurities

1999 ◽  
Vol 60 (23) ◽  
pp. 15848-15857 ◽  
Author(s):  
I. V. Ponomarev ◽  
V. V. Flambaum ◽  
A. L. Efros
Keyword(s):  
Exchange Interaction ◽  
Impurity Band ◽  
Two Dimensional ◽  
Out Of Plane

Electronic properties of quasi two-dimensional transition metals chalcogenides with low-dimensional magnetism

Doklady BGUIR ◽  
2020 ◽  
Vol 18 (7) ◽  
pp. 87-95
Author(s):  
M. S. Baranava ◽  
P. A. Praskurava
Keyword(s):  
Transition Metal ◽  
Transition Metals ◽  
Exchange Interaction ◽  
Electronic Properties ◽  
Metal Atom ◽  
Transition Metal Atom ◽  
Two Dimensional ◽  
Transition Metal Atoms ◽  
Ground Magnetic ◽  
Low Dimensional

The search for fundamental physical laws which lead to stable high-temperature ferromagnetism is an urgent task. In addition to the already synthesized two-dimensional materials, there remains a wide list of possible structures, the stability of which is predicted theoretically. The article suggests the results of studying the electronic properties of MAX3 (M = Cr, Fe, A = Ge, Si, X = S, Se, Te) transition metals based compounds with nanostructured magnetism. The research was carried out using quantum mechanical simulation in specialized VASP software and calculations within the Heisenberg model. The ground magnetic states of twodimensional MAX3 and the corresponding energy band structures are determined. We found that among the systems under study, CrGeTe3 is a semiconductor nanosized ferromagnet. In addition, one is a semiconductor with a bandgap of 0.35 eV. Other materials are antiferromagnetic. The magnetic moment in MAX3 is localized on the transition metal atoms: in particular, the main one on the d-orbital of the transition metal atom (and only a small part on the p-orbital of the chalcogen). For CrGeTe3, the exchange interaction integral is calculated. The mechanisms of the formation of magnetic order was established. According to the obtained exchange interaction integrals, a strong ferromagnetic order is formed in the semiconductor plane. The distribution of the projection density of electronic states indicates hybridization between the d-orbital of the transition metal atom and the p-orbital of the chalcogen. The study revealed that the exchange interaction by the mechanism of superexchange is more probabilistic.

scholarly journals Nonreciprocal magnons in a two-dimensional crystal with out-of-plane magnetization

2020 ◽  
Vol 102 (1) ◽  
Author(s):  
Marcio Costa ◽  
N. M. R. Peres ◽  
J. Fernández-Rossier ◽  
A. T. Costa
Keyword(s):  
Two Dimensional ◽  
Out Of Plane ◽  
Dimensional Crystal

Magnetic quantum oscillations in doped antiferromagnets

2017 ◽  
Vol 31 (25) ◽  
pp. 1745015
Author(s):  
V. V. Kabanov
Keyword(s):  
Magnetic Field ◽  
Polar Angle ◽  
Two Dimensional ◽  
Plane Angle ◽  
Arbitrary Direction ◽  
Magnetization Direction ◽  
Quantum Oscillations ◽  
Out Of Plane ◽  
Plane Direction ◽  
Magnetic Quantum Oscillations

Energy spectrum of electrons (holes) doped into two-dimensional (2D) antiferromagnetic (AF) semiconductors is quantized in an external magnetic field of arbitrary direction. A peculiar dependence of de Haas–van Alphen (dHvA) magneto-oscillation amplitudes on the azimuthal in-plane angle from the magnetization direction and on the polar angle from the out-of-plane direction is found. The angular dependence of the amplitude is different if the measurements are performed in the field above and below of the spin-flop field.

Optimization of Phononic Crystals for the Simultaneous Attenuation of Out-of-Plane and In-Plane Waves

2011 ◽  
Author(s):  
Osama R. Bilal ◽  
Mahmoud I. Hussein
Keyword(s):  
Genetic Algorithm ◽  
Phononic Crystal ◽  
Plane Waves ◽  
Phononic Crystals ◽  
Gap Size ◽  
Two Dimensional ◽  
Dispersion Characteristics ◽  
Out Of Plane ◽  
Optimization Methodology ◽  
Application Specific

The topological distribution of the material phases inside the unit cell composing a phononic crystal has a significant effect on its dispersion characteristics. This topology can be engineered to produce application-specific requirements. In this paper, a specialized genetic-algorithm-based topology optimization methodology for the design of two-dimensional phononic crystals is presented. Specifically the target is the opening and maximization of band gap size for (i) out-of-plane waves, (ii) in-plane waves and (iii) both out-of-plane and in-plane waves simultaneously. The methodology as well as the resulting designs are presented.

scholarly journals Using a Tunable Quantum Wire To Measure the Large out-of-Plane Spin Splitting of Quasi Two-Dimensional Holes in a GaAs Nanostructure

Nano Letters ◽  
2012 ◽  
Vol 13 (1) ◽  
pp. 148-152 ◽  
Author(s):  
A. Srinivasan ◽  
L. A. Yeoh ◽  
O. Klochan ◽  
T. P. Martin ◽  
J. C. H. Chen ◽  
...  
Keyword(s):  
Quantum Wire ◽  
Spin Splitting ◽  
Two Dimensional ◽  
Out Of Plane
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