scholarly journals Metal-insulator transition of isotopically enriched neutron-transmutation-doped70Ge:Gain magnetic fields

1999 ◽  
Vol 60 (23) ◽  
pp. 15817-15823 ◽  
Author(s):  
Michio Watanabe ◽  
Kohei M. Itoh ◽  
Youiti Ootuka ◽  
Eugene E. Haller
Keyword(s):  
Magnetic Fields ◽  
Insulator Transition ◽  
Metal Insulator Transition ◽  
Metal Insulator ◽  
Neutron Transmutation

Hopping Conduction and Metal-Insulator Transition in Isotopically Enriched Neutron-Transmutation-Doped70Ge:Ga

1996 ◽  
Vol 77 (19) ◽  
pp. 4058-4061 ◽  
Author(s):  
K. M. Itoh ◽  
E. E. Haller ◽  
J. W. Beeman ◽  
W. L. Hansen ◽  
J. Emes ◽  
...  
Keyword(s):  
Insulator Transition ◽  
Hopping Conduction ◽  
Metal Insulator Transition ◽  
Metal Insulator ◽  
Neutron Transmutation

Metal–insulator transition of NTD in magnetic fields

2000 ◽  
Vol 284-288 ◽  
pp. 1677-1678
Author(s):  
Michio Watanabe ◽  
Kohei M Itoh ◽  
Youiti Ootuka ◽  
Eugene E Haller
Keyword(s):  
Magnetic Fields ◽  
Insulator Transition ◽  
Metal Insulator Transition ◽  
Metal Insulator

Resistive characteristics of LSMO/LCMO bi-layers and temperature switching effect of magnetoresistance

2014 ◽  
Vol 28 (12) ◽  
pp. 1450096
Author(s):  
Blagoy S. Blagoev ◽  
Timerfayaz C. Nurgaliev ◽  
Irina E. Bineva ◽  
Elmira D. Vasileva ◽  
Vladimir Štrbik ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Magnetic Fields ◽  
Magnetron Sputtering ◽  
Temperature Dependence ◽  
Insulator Transition ◽  
Hysteretic Behavior ◽  
Switching Effect ◽  
Transition Temperatures ◽  
Metal Insulator Transition ◽  
Metal Insulator

Ferromagnetic La 0.7 Sr 0.3 MnO 3/ La 0.7 Ca 0.3 MnO 3 ( LSMO / LCMO ) bi-layers of submicron thickness were deposited by magnetron sputtering on SrTiO 3 ( STO ) and Al 2 O 3 ( ALO ) substrates and temperature dependence of their resistances were investigated. The samples grown on ALO substrates demonstrated lower metal–insulator transition temperatures and higher resistances. The maximum magnetoresistance (MR) of bi-layer grown on STO substrate reached -56% at 184.6 K and magnetic field of 1 T. At temperatures below 150 K a "switching" of MR from negative to positive values (+ 1.7% at 110 K) and a hysteretic behavior of the resistance at low magnetic fields were observed as well.

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