Electronic transport properties in random one-dimensional chains containing mesoscopic-ring defects

1999 ◽  
Vol 60 (17) ◽  
pp. 12099-12106 ◽  
Author(s):  
X. Huang
1990 ◽  
Vol 229 (1-3) ◽  
pp. 316-320 ◽  
Author(s):  
B. Kramer ◽  
J. Mašek ◽  
V. Špička ◽  
B. Velický

2009 ◽  
Vol 23 (25) ◽  
pp. 5067-5073
Author(s):  
R. DJELTI ◽  
S. BENTATA ◽  
Z. AZIZ

By using a transfer matrix model, we examined in this paper the extended states of a noninteracting electron in one-dimensional dimer/trimer randomly placed in superlattices (SLs). We study numerically the effects of short-range correlated disorder on the electronic transport properties and intentionally disordered GaAs/Al x Ga 1-x As SLs. We consider layers having identical thickness where the Al concentration x takes at random two different values with the constraint that one of them appears only in pairs or triply i.e., the random dimer/trimer barrier.


2018 ◽  
Author(s):  
Shenqiu Mo ◽  
Dengke Ma ◽  
Lina Yang ◽  
Meng An ◽  
Zhiyu Liu ◽  
...  

Author(s):  
H. H. Huang ◽  
Xiaofeng Fan ◽  
Wei Tao Zheng ◽  
David J. Singh

Layered semiconducting Ge4Se3Te shows unusual bonding that suggests the possibility of unusual transport that may be favorable for thermoelectrics. We investigated the electronic transport properties in relation to thermoelectricity of...


2021 ◽  
Vol 20 (2) ◽  
pp. 798-804
Author(s):  
G. R. Berdiyorov ◽  
F. Boltayev ◽  
G. Eshonqulov ◽  
H. Hamoudi

AbstractThe effect of zinc and oxygen vacancy defects on the electronic transport properties of Ag(100)–ZnO(100)–Pt(100) sandwich structures is studied using density functional theory in combination with the nonequilibrium Green’s functional formalism. Defect-free systems show clear current rectification due to voltage dependent charge localization in the system as revealed in our transmission eigenstates analysis. Regardless of the location, oxygen vacancies result in enhanced current in the system, whereas Zn vacancy defects reduce the charge transport across the junction. The current rectification becomes less pronounced in the presence of both types of vacancy defects. Our findings can be of practical importance for developing metal-insulator-metal diodes.


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