Theoretical and Experimental Study of Raman Scattering from Coupled LO-Phonon-Plasmon Modes in Silicon Carbide

1972 ◽  
Vol 6 (6) ◽  
pp. 2380-2388 ◽  
Author(s):  
Miles V. Klein ◽  
B. N. Ganguly ◽  
Priscilla J. Colwell
Keyword(s):  
Experimental Study ◽  
Silicon Carbide ◽  
Raman Scattering ◽  
Plasmon Modes

MeV Self Ion Beam Induced Amorphisation of Silicon Carbide Surfaces and Its Effect on Their Trdbomechanical Propertdzs

1991 ◽  
Vol 235 ◽  
Author(s):  
D. K. Sood ◽  
V. C. Nath ◽  
Yang Xi
Keyword(s):  
Silicon Carbide ◽  
Raman Scattering ◽  
High Precision ◽  
Friction And Wear ◽  
Ion Beam ◽  
Steel Ball ◽  
Carbon Ions ◽  
Ion Energy ◽  
Number Of Cycles ◽  
Tribomechanical Properties

ABSTRACTAmorphisation of sintered SiC by bombardment with self (C, Si) ions has been studied. Ion doses ranged from 1×1015 to 1×1017 ions/cm2; and ion energy was varied from 0.09 to 5 MeV. Amorphisation was detected by micro-focus Raman scattering. Tribomechanical properties-friction and wear were studied with a high precision pin (steel ball) and disc (implanted) machine. Results show substantial improvements in friction and wear, which persist to a large number of cycles. Tribomechanical properties are shown to correlate with surface amorphisation and carburisation. Carbon ions are found to be much more effective than Si ions (with similar damage distributions) in reducing friction and wear.

scholarly journals Strong Coupling of Folded Phonons with Plasmons in 6H-SiC Micro/Nanocrystals

Molecules ◽  
2018 ◽  
Vol 23 (9) ◽  
pp. 2296 ◽  
Author(s):  
Yao Huang ◽  
Run Yang ◽  
Shijie Xiong ◽  
Jian Chen ◽  
Xinglong Wu
Keyword(s):  
Silicon Carbide ◽  
Electrical Properties ◽  
Raman Scattering ◽  
Film Thickness ◽  
Strong Coupling ◽  
Energy Gaps ◽  
Longitudinal Optic ◽  
Transverse Optic

Silicon carbide (SiC) has a large number of polytypes of which 3C-, 4H-, 6H-SiC are most common. Since different polytypes have different energy gaps and electrical properties, it is important to identify and characterize various SiC polytypes. Here, Raman scattering is performed on 6H-SiC micro/nanocrystal (MNC) films to investigate all four folded transverse optic (TO) and longitudinal optic (LO) modes. With increasing film thickness, the four folded TO modes exhibit the same frequency downshift, whereas the four folded LO modes show a gradually-reduced downshift. For the same film thickness, all the folded modes show larger frequency downshifts with decreasing MNC size. Based on plasmons on MNCs, these folded modes can be attributed to strong coupling of the folded phonons with plasmons which show different strengths for the different folded modes while changing the film thickness and MNC size. This work provides a useful technique to identify SiC polytypes from Raman scattering.

Theoretical and experimental study of Raman scattering and infrared reflectivity in indium phosphide

1988 ◽  
Vol 38 (8) ◽  
pp. 5722-5725 ◽  
Author(s):  
B. H. Bairamov ◽  
I. P. Ipatova ◽  
V. A. Milorava ◽  
V. V. Toporov ◽  
K. Naukkarinen ◽  
...  
Keyword(s):  
Experimental Study ◽  
Indium Phosphide ◽  
Raman Scattering ◽  
Infrared Reflectivity

Experimental Study of the Liquid-Glass Transition in an Inorganic Polymer Li0.5Na0.5PO3

1995 ◽  
Vol 407 ◽  
Author(s):  
B. Rufflé ◽  
S. Beaufils ◽  
Y. Délugeard ◽  
G. Coddens ◽  
J. Etrillard ◽  
...  
Keyword(s):  
Experimental Study ◽  
Glass Transition ◽  
Raman Scattering ◽  
Viscous Flow ◽  
Liquid Glass ◽  
Low Frequency ◽  
Glass Forming ◽  
Scattering Spectra ◽  
Temperature Ranges ◽  
Raman Scattering Spectra

ABSTRACTNew experimental results obtained with various techniques on a less-studied glass-forming system are presented. At low frequency, a secondary βslow-process, decoupled from the viscous flow, is observed by 3 1P NMR. Raman scattering spectra and coherent neutron scattering spectra has been obtained in wide frequency and temperature ranges showing the same qualitative features for the Boson peak while the quasielastic contribution seems to differ markedly.

Investigation of Additional States in the Silicon Carbide Surface after Diffusion Welding

2012 ◽  
Vol 717-720 ◽  
pp. 275-278
Author(s):  
János Mizsei ◽  
Oleg Korolkov ◽  
Natalja Sleptsuk ◽  
Jana Toompuu ◽  
Toomas Rang
Keyword(s):  
Experimental Study ◽  
Silicon Carbide ◽  
Crystal Lattice ◽  
Surface States ◽  
Deep Levels ◽  
Probe Method ◽  
Diffusion Welding ◽  
Kelvin Probe ◽  
Kelvin Probe Method

This paper is a summary of the experimental study of deep levels in a SiC crystal lattice caused by diffusion welding (DW). Investigations were carried out by DLTS and Kelvin Probe methods. Investigations revealed that DLTS method is not applicable for identification of surface states. Research conducted by the Kelvin Probe method has shown an increase in the density of surface states after the diffusion welding from 2x1015 cm-2 to 3.5x1016 cm-2.

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