Energy Dependence of the Effective Debye Temperature Obtained from Low-Energy-Electron-Diffraction-Intensity Measurements

1972 ◽  
Vol 6 (4) ◽  
pp. 1097-1105 ◽  
Author(s):  
G. E. Laramore
Keyword(s):  
Electron Diffraction ◽  
Debye Temperature ◽  
Energy Dependence ◽  
Low Energy ◽  
Energy Electron ◽  
Diffraction Intensity ◽  
Low Energy Electron Diffraction ◽  
Intensity Measurements ◽  
Low Energy Electron

REFINEMENT OF THE ${\rm{Si}}(111) \mbox{-} (\surd{3} \times \surd{3}){\rm{R30}}^\circ - {\rm{Ag}}$ STRUCTURE BY LOW-ENERGY ELECTRON DIFFRACTION

1995 ◽  
Vol 02 (04) ◽  
pp. 451-457 ◽  
Author(s):  
H. OVER ◽  
S.Y. TONG ◽  
J. QUINN ◽  
F. JONA
Keyword(s):  
Experimental Data ◽  
Electron Diffraction ◽  
Bond Length ◽  
Debye Temperature ◽  
Low Energy ◽  
Energy Electron ◽  
Data Set ◽  
Low Energy Electron Diffraction ◽  
The Third ◽  
Low Energy Electron

We have reinvestigated the bond geometry of the [Formula: see text] surface by means of low-energy electron diffraction using a much larger experimental data set than that previously used. The [Formula: see text] surface consists of a [Formula: see text] lattice of Ag atoms which replaces the topmost Si atoms, and forces the remaining Si atoms to form trimers. The Ag-Ag bond length turned out to be 3.47±0.12 Å. The Ag atoms are laterally displaced from the bulk positions of the Si atoms which they have replaced by 0.53 Å resulting in a Ag-Si bond length of 2.36±0.17 Å. The missing top Si layer and the formation of Si trimers lead to strong distortions in deeper Si layers, most notably a buckling in the third and fourth Si layer with a magnitude of about 0.35 Å and 0.2 Å, respectively. Applying the concept of ‘split positions’, the low Debye temperature of Ag has been interpreted as being caused by strong in-plane (either static or dynamic) movements of the Ag atoms perpendicular to the Ag-Si bonding.

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