Magnetic and transport properties of the ferromagnetic semiconductor heterostructures (In,Mn)As/(Ga,Al)Sb

1999 ◽  
Vol 59 (8) ◽  
pp. 5826-5831 ◽  
Author(s):  
A. Oiwa ◽  
A. Endo ◽  
S. Katsumoto ◽  
Y. Iye ◽  
H. Ohno ◽  
...  
AIP Advances ◽  
2014 ◽  
Vol 4 (9) ◽  
pp. 097108 ◽  
Author(s):  
Yoshisuke Ban ◽  
Yuki Wakabayashi ◽  
Ryota Akiyama ◽  
Ryosho Nakane ◽  
Masaaki Tanaka

2011 ◽  
Vol 239-242 ◽  
pp. 127-131
Author(s):  
Gang Xiang ◽  
Xi Zhang

The co-doping effect of Be and Mn have been studied in the ferromagnetic semiconductor (Ga,Mn)As thin films. The measurement of magnetic properties shows that the Be doping decreases the Curie temperatures of the ferromagnetic sample due to defects formation. The transport studies show that the Be incorporation decreases the resistivity of the (Ga,Mn)As thin films. It is found that Be incorporation decreases the planar Hall resistance but increases the resistance transitions in the magnetic samples.


2008 ◽  
Vol 37 (6) ◽  
pp. 912-916 ◽  
Author(s):  
S.J. Chung ◽  
D.Y. Shin ◽  
Hyungchan Kim ◽  
Sanghoon Lee ◽  
X. Liu ◽  
...  

2007 ◽  
Vol 310 (2) ◽  
pp. 2117-2119 ◽  
Author(s):  
Jeongyong Choi ◽  
Young Hun Hwang ◽  
Sungyoul Choi ◽  
Soon Cheol Hong ◽  
Sunglae Cho

2005 ◽  
Vol 22 (2) ◽  
pp. 463-465 ◽  
Author(s):  
Li Xi-Jun ◽  
Zhou YI-Kai ◽  
Kim M. ◽  
Kimura S. ◽  
Teraguchi N. ◽  
...  

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