Delayed intersubband relaxation in quantum wires due to quantum kinetic Coulomb scattering

1999 ◽  
Vol 59 (8) ◽  
pp. 5806-5816 ◽  
Author(s):  
F. Prengel ◽  
E. Schöll
Keyword(s):  
Quantum Wires ◽  
Coulomb Scattering ◽  
Intersubband Relaxation

Femtosecond measurement of electron capture and intersubband relaxation in self-organized InAs quantum wires onIn1−xAlxAs/InP

2001 ◽  
Vol 63 (8) ◽  
Author(s):  
E. Péronne ◽  
T. Polack ◽  
J. F. Lampin ◽  
F. Fossard ◽  
F. Julien ◽  
...  
Keyword(s):  
Electron Capture ◽  
Quantum Wires ◽  
Self Organized ◽  
Intersubband Relaxation

ELECTRONIC AND OPTICAL PROPERTIES OF QUASI-ONE-DIMENSIONAL CARRIERS IN QUANTUM WIRES

1995 ◽  
Vol 04 (01) ◽  
pp. 99-140 ◽  
Author(s):  
M. GRUNDMANN ◽  
J. CHRISTEN ◽  
D. BIMBERG ◽  
E. KAPON
Keyword(s):  
Optical Properties ◽  
Quantum Wells ◽  
Quantum Wires ◽  
Bulk Material ◽  
Theoretical Calculations ◽  
Optical Quality ◽  
Structural And Optical Properties ◽  
High Optical Quality ◽  
Intersubband Relaxation

We review structural and optical properties of quantum wires (QWRs), grown on nonplanar substrates. Our approach of in situ wire formation on patterned substrates allows us to fabricate defect free QWRs of high optical quality, suitable for laser and other optoelectronic applications. Several types of wires and wire arrangements are investigated in detail: single QWRs, vertical QWR stacks, lateral sub-μm pitch QWR arrays and pseudomorphic QWRs. Theoretical calculations are performed for electronic eigenstates (with inclusion of strain effects) as well as the lineshape of spontaneous radiative recombination. The lateral bandgap modulation, carrier capture into the QWRs, subsequent intersubband relaxation, cooling, interband recombination, and bandgap renormalization are systematically investigated and compared to current theories and previously obtained results for quantum wells or bulk material.

Recombination kinetics and intersubband relaxation in semiconductor quantum wires

1994 ◽  
Vol 9 (11S) ◽  
pp. 1939-1945 ◽  
Author(s):  
M Grundmann ◽  
J Christen ◽  
M Joschko ◽  
O Stier ◽  
D Bimberg ◽  
...  
Keyword(s):  
Quantum Wires ◽  
Recombination Kinetics ◽  
Intersubband Relaxation

Strain measurement in In0.2Ga0.8As/GaAs quantum wires by convergent beam electron diffraction

1995 ◽  
Vol 53 ◽  
pp. 444-445
Author(s):  
S. Hillyard ◽  
Y.-P. Chen ◽  
J.D. Reed ◽  
W.J. Schaff ◽  
L.F. Eastman ◽  
...  
Keyword(s):  
Electron Diffraction ◽  
Semiconductor Lasers ◽  
Quantum Wire ◽  
Quantum Wires ◽  
Convergent Beam Electron Diffraction ◽  
Zero Order ◽  
Beam Electron ◽  
Local Lattice ◽  
Device Applications ◽  
Convergent Beam

The positions of high-order Laue zone (HOLZ) lines in the zero order disc of convergent beam electron diffraction (CBED) patterns are extremely sensitive to local lattice parameters. With proper care, these can be measured to a level of one part in 104 in nanometer sized areas. Recent upgrades to the Cornell UHV STEM have made energy filtered CBED possible with a slow scan CCD, and this technique has been applied to the measurement of strain in In0.2Ga0.8 As wires.Semiconductor quantum wire structures have attracted much interest for potential device applications. For example, semiconductor lasers with quantum wires should exhibit an improvement in performance over quantum well counterparts. Strained quantum wires are expected to have even better performance. However, not much is known about the true behavior of strain in actual structures, a parameter critical to their performance.

Characterization of GaAs/AlGaAs quantum wells and quantum wires by chemical lattice imaging

1994 ◽  
Vol 52 ◽  
pp. 736-737
Author(s):  
A. Carlsson ◽  
J.-O. Malm ◽  
A. Gustafsson
Keyword(s):  
Quantum Well ◽  
Quantum Wells ◽  
Quantum Wires ◽  
Vapour Phase ◽  
Quantitative Information ◽  
Lattice Imaging ◽  
Vapour Phase Epitaxy ◽  
Metalorganic Vapour Phase Epitaxy ◽  
High Resolution Images

In this study a quantum well/quantum wire (QW/QWR) structure grown on a grating of V-grooves has been characterized by a technique related to chemical lattice imaging. This technique makes it possible to extract quantitative information from high resolution images.The QW/QWR structure was grown on a GaAs substrate patterned with a grating of V-grooves. The growth rate was approximately three monolayers per second without growth interruption at the interfaces. On this substrate a barrier of nominally Al0.35 Ga0.65 As was deposited to a thickness of approximately 300 nm using metalorganic vapour phase epitaxy . On top of the Al0.35Ga0.65As barrier a 3.5 nm GaAs quantum well was deposited and to conclude the structure an additional approximate 300 nm Al0.35Ga0.65 As was deposited. The GaAs QW deposited in this manner turns out to be significantly thicker at the bottom of the grooves giving a QWR running along the grooves. During the growth of the barriers an approximately 30 nm wide Ga-rich region is formed at the bottom of the grooves giving a Ga-rich stripe extending from the bottom of each groove to the surface.

High-field magnetoluminescence of ZnSe quantum wires

1998 ◽  
Vol 184-185 (1-2) ◽  
pp. 339-342 ◽  
Author(s):  
L Parthier
Keyword(s):  
High Field ◽  
Quantum Wires
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