Scanning-tunneling-microscope study on the{111}cross-sectional surface of Si/Ge layered material

1999 ◽  
Vol 59 (8) ◽  
pp. 5612-5616 ◽  
Author(s):  
M. Ohmori ◽  
H. Hirayama ◽  
K. Takayanagi
Keyword(s):  
Scanning Tunneling Microscope ◽  
Microscope Study ◽  
Layered Material ◽  
Scanning Tunneling ◽  
Cross Sectional ◽  
Tunneling Microscope ◽  
Sectional Surface

Cross-sectional scanning tunneling microscope study of a boron-implanted Si wafer

1997 ◽  
Vol 56 (4) ◽  
pp. 1948-1957 ◽  
Author(s):  
H. Hirayama ◽  
M. Koike ◽  
Y. Einaga ◽  
A. Shibata ◽  
K. Takayanagi
Keyword(s):  
Scanning Tunneling Microscope ◽  
Microscope Study ◽  
Scanning Tunneling ◽  
Cross Sectional ◽  
Tunneling Microscope ◽  
Si Wafer

Scanning tunneling microscope study of Sb/Si(111)-53×53 structure

1997 ◽  
Vol 15 (3) ◽  
pp. 1572-1575 ◽  
Author(s):  
Kang-Ho Park ◽  
Jeong Sook Ha ◽  
Wan Soo Yun ◽  
El-Hang Lee ◽  
Jae-Yel Yi ◽  
...  
Keyword(s):  
Scanning Tunneling Microscope ◽  
Microscope Study ◽  
Scanning Tunneling ◽  
Tunneling Microscope

Scanning tunneling microscope study of capped quantum dots

2004 ◽  
Vol 85 (12) ◽  
pp. 2355-2357 ◽  
Author(s):  
H. Z. Song ◽  
M. Kawabe ◽  
Y. Okada ◽  
R. Yoshizaki ◽  
T. Usuki ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Scanning Tunneling Microscope ◽  
Microscope Study ◽  
Scanning Tunneling ◽  
Tunneling Microscope

Scanning tunneling microscope study of microcrystalline silicon surfaces in air

1989 ◽  
Vol 54 (5) ◽  
pp. 427-429 ◽  
Author(s):  
Ichiro Tanaka ◽  
Fukunobu Osaka ◽  
Takashi Kato ◽  
Yoshifumi Katayama ◽  
Shin‐ichi Muramatsu ◽  
...  
Keyword(s):  
Scanning Tunneling Microscope ◽  
Microscope Study ◽  
Silicon Surfaces ◽  
Scanning Tunneling ◽  
Microcrystalline Silicon ◽  
Tunneling Microscope

Scanning-tunneling-microscope study of the α and β phases of the GaAs (001)-(2×4) reconstruction

1995 ◽  
Vol 51 (24) ◽  
pp. 17795-17799 ◽  
Author(s):  
L. D. Broekman ◽  
R. C. G. Leckey ◽  
J. D. Riley ◽  
A. Stampfl ◽  
B. F. Usher ◽  
...  
Keyword(s):  
Scanning Tunneling Microscope ◽  
Microscope Study ◽  
Scanning Tunneling ◽  
Tunneling Microscope

Topographic and Magnetic-Sensitive Scanning Tunneling Microscope Study of Magnetite

Science ◽  
1992 ◽  
Vol 255 (5044) ◽  
pp. 583-586 ◽  
Author(s):  
R. WIESENDANGER ◽  
I. V. SHVETS ◽  
D. BURGLER ◽  
G. TARRACH ◽  
H. J. GUNTHERODT ◽  
...  
Keyword(s):  
Scanning Tunneling Microscope ◽  
Microscope Study ◽  
Scanning Tunneling ◽  
Tunneling Microscope

Scanning Tunneling Microscope-Induced Luminescence Studies of Defects in GaN Layers and Heterostructures

1999 ◽  
Vol 588 ◽  
Author(s):  
S. Evoy ◽  
C. K. Harnett ◽  
S. Keller ◽  
U. K. Mishra ◽  
S. P. DenBaars ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Scanning Tunneling Microscope ◽  
Multiple Quantum Well ◽  
Scanning Tunneling ◽  
Nanometer Scale ◽  
Multiple Quantum ◽  
Proof Of Concept ◽  
Cross Sectional ◽  
Tunneling Microscope ◽  
Nm Range

AbstractWe present the scanning tunneling microscope-induced luminescence (STL) imaging of defects in optoelectronic materials. Resolution is first discussed using cross-sectional images of InGaAs/GaAs quantum dots. Proof of concept is then provided through the nanometer-scale imaging of GaN layers and quantum wells. The expected λ=356±25 nm range dominates the low temperature STL of GaN. Mapping of luminescence shows circular non-emitting areas around threading dislocations. Extent of dark areas suggests a hole diffusion length of Ld=30–55 nm, in agreement with reported values. The expected λ=450±35 nm range dominates the STL from a buried InGaN/GaN multiple quantum well. Imaging reveals 30–100 nm wide smooth fluctuations of luminescence.

Sign in / Sign up

Export Citation Format

Share Document