Role of generalized-gradient approximation in structural and electronic properties of bulk and surface ofβ-GaN and GaAs

1999 ◽  
Vol 59 (4) ◽  
pp. 3008-3014 ◽  
Author(s):  
R. Miotto ◽  
G. P. Srivastava ◽  
A. C. Ferraz
2012 ◽  
Vol 194 ◽  
pp. 276-279 ◽  
Author(s):  
Gladys Patricia Abdel Rahim ◽  
Jairo Arbey Rodríguez

We study the structural and electronic properties of scandium carbide ScC and niobium carbide NbC in both the sodium chloride rock salt (NaCl) and wurtzite structures by means of accurate first principles total energy calculations. The calculations were performed employing the full-potential linearized plane wave method (FP-LAPW). We used the generalized gradient approximation (GGA) of Perdew Burke and Ernzerhof for the exchange and correlation potential. Volume optimization and density of states including spin (DOS) of the systems are presented.


2012 ◽  
Vol 26 (29) ◽  
pp. 1250151
Author(s):  
Z. H. YU ◽  
C. Y. LI ◽  
H. Z. LIU

Using the first-principles plane wave pseudopotential method, the structural and electronic properties of intermetallic compound SrLiSb have been studied within generalized gradient approximation in the frame of density functional theory. The calculations of lattice parameters are in well agreement with the available experimental data. The geometry optimization results indicated the compressibility of SrLiSb is anisotropic under high pressure. The energy band structure and density of states of SrLiSb were also calculated, indicating that SrLiSb has an electronic phase transition from direct-gap semiconductor to indirect-gap semiconductor at approximate 8 GPa.


2013 ◽  
Vol 634-638 ◽  
pp. 2545-2549 ◽  
Author(s):  
Jing Kai Yang ◽  
Hong Li Zhao ◽  
Yan Zhu ◽  
Li Ping Zhao ◽  
Jian Li

The structural and electronic properties of Ti-doped SnO2with 6.25 at.% are investigated with the first principle calculations based on the density functional theory within the generalized gradient approximation. The calculation results indicate that the crystal structure of Sn0.9375Ti0.0625O2possesses a smaller volume; the bond length of Ti-O is shorter than that of Sn-O; the relative angle θ change value of Sn-O-Sn→Ti-O-Ti is about 1.07%. Ti-O bond possesses more covalent ingredient and stronger bond energy than Sn-O bond. After the replacement of one Ti atom, O atom bonded with Ti atom possessed fewer electrons, the ratio of charges possessed by Ti atom and O atom dose not agree with the stoichiometry of compound, create more holes at the top of VB of Sn0.9375Ti0.0625O2, and lead to the increase of the conductivity.


2013 ◽  
Vol 771 ◽  
pp. 101-104
Author(s):  
Xiu Juan Du ◽  
Zheng Chen ◽  
Jing Zhang ◽  
Zhao Rong Ning

Under the generalized gradient approximation (GGA), the structural and electronic properties of armchair GaN nanoribbons with AlN edges have been investigated by using the first-principles projector-augmented wave (PAW) potential within the density function theory (DFT) framework. The results reflect that the band gaps of the armchair GaN nanoribbons (AGaNNRs) are vibrated with the increasing ribbon width. For Al, Ga, H and N atom, the successively increasing electronegativity of 3.04, 2.1, 1.81 and 1.61 causes the successive increase of the charge density. These results are very useful for the applications of the AGaNNRs.


2017 ◽  
Vol 31 (01) ◽  
pp. 1650249
Author(s):  
Diwaker ◽  
Ashwani Kumar

In the present work, we report the structural and the electronic properties of the alloy [Formula: see text] with [Formula: see text] and [Formula: see text]. Ab initio calculations are based upon the density functional theory with generalized gradient approximation and Perdew–Burke–Ernzerhof (PBE) exchange–correlation functional. In our calculations, we found that antimony (Sb) doping in zinc telluride (ZnTe) system introduces some bands which mainly originate from [Formula: see text]- and [Formula: see text]-states of Te and Sb atom and are primarily responsible for [Formula: see text]-type and [Formula: see text]-type conductivity.


2020 ◽  
Vol 5 (2) ◽  
pp. 39
Author(s):  
Wei-Chi Chiu ◽  
Bahadur Singh ◽  
Sougata Mardanya ◽  
Johannes Nokelainen ◽  
Amit Agarwal ◽  
...  

Bismuth has recently attracted interest in connection with Na-ion battery anodes due to its high volumetric capacity. It reacts with Na to form Na 3 Bi which is a prototypical Dirac semimetal with a nontrivial electronic structure. Density-functional-theory based first-principles calculations are playing a key role in understanding the fascinating electronic structure of Na 3 Bi and other topological materials. In particular, the strongly-constrained-and-appropriately-normed (SCAN) meta-generalized-gradient-approximation (meta-GGA) has shown significant improvement over the widely used generalized-gradient-approximation (GGA) scheme in capturing energetic, structural, and electronic properties of many classes of materials. Here, we discuss the electronic structure of Na 3 Bi within the SCAN framework and show that the resulting Fermi velocities and s-band shift around the Γ point are in better agreement with experiments than the corresponding GGA predictions. SCAN yields a purely spin-orbit-coupling (SOC) driven Dirac semimetal state in Na 3 Bi in contrast with the earlier GGA results. Our analysis reveals the presence of a topological phase transition from the Dirac semimetal to a trivial band insulator phase in Na 3 Bi x Sb 1 − x alloys as the strength of the SOC varies with Sb content, and gives insight into the role of the SOC in modulating conduction properties of Na 3 Bi.


2017 ◽  
Vol 231 (7-8) ◽  
Author(s):  
Vanessa Werth ◽  
Kai Volgmann ◽  
Mazharul M. Islam ◽  
Paul Heitjans ◽  
Thomas Bredow

AbstractIn many applications it has been found that the standard generalized gradient approximation (GGA) does not accurately describe weak chemical bond and electronic properties of solids containing transition metals. In this work, we have considered the intercalation material 1T-Li


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