Energy spectrum and parameters of deep impurity level inPb1−xGexTealloys doped with Yb

1999 ◽  
Vol 59 (20) ◽  
pp. 12928-12934 ◽  
Author(s):  
E. P. Skipetrov ◽  
N. A. Chernova ◽  
E. I. Slyn’ko ◽  
Yu. K. Vygranenko
1995 ◽  
Vol 34 (Part 1, No. 8A) ◽  
pp. 3987-3990 ◽  
Author(s):  
Yoshiharu Anda ◽  
Takuya Ariki ◽  
Takeshi Kobayashi

2021 ◽  
Author(s):  
Jianbo Yin ◽  
Xiaobin Yan ◽  
Min Zhu

Abstract In this paper, the electronic structure and optical properties of CdS doped by Sn with different concentrations were investigated by first principles. The calculation results of electronic structure show that the doping of Sn can produce a deep impurity level band in the band structure of CdS. The calculation results of optical property show that Sn doping can increase the light absorption coefficient and conductivity of CdS. The overall calculation results show that Sn doping can produce stable intermediate band structure and significantly improve the optical property of CdS.


2012 ◽  
Vol 46 (6) ◽  
pp. 741-748 ◽  
Author(s):  
E. P. Skipetrov ◽  
A. N. Golovanov ◽  
A. V. Knotko ◽  
E. I. Slyn’ko ◽  
V. E. Slyn’ko

1982 ◽  
Vol 114 (2) ◽  
pp. K153-K156 ◽  
Author(s):  
E. Litwin-Staszewska ◽  
L. Kończewicz ◽  
R. Piotrzkowski ◽  
W. Szymańska

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