Spin-dependent tunneling in double-barrier semiconductor heterostructures

1999 ◽  
Vol 59 (19) ◽  
pp. 12514-12520 ◽  
Author(s):  
A. Voskoboynikov ◽  
Shiue Shin Liu ◽  
C. P. Lee
Keyword(s):  
Semiconductor Heterostructures ◽  
Double Barrier

Effect of Barrier Width on Spin-Dependent Tunneling in Asymmetrical Double Barrier Semiconductor Heterostructures

2016 ◽  
Vol 6 (3) ◽  
pp. 175-179 ◽  
Author(s):  
L. Bruno Chandrasekar ◽  
K. Gnanasekar ◽  
M. Karunakaran ◽  
R. Chandramohan
Keyword(s):  
Semiconductor Heterostructures ◽  
Barrier Width ◽  
Double Barrier

Comprehensive Analysis of Electron Evaporative Cooling in Double-Barrier Semiconductor Heterostructures

2022 ◽  
Vol 17 (1) ◽  
Author(s):  
Marc Bescond ◽  
Guillaume Dangoisse ◽  
Xiangyu Zhu ◽  
Chloé Salhani ◽  
Kazuhiko Hirakawa
Keyword(s):  
Evaporative Cooling ◽  
Comprehensive Analysis ◽  
Semiconductor Heterostructures ◽  
Double Barrier

scholarly journals Electron Transport in Double-Barrier Semiconductor Heterostructures for Thermionic Cooling

2021 ◽  
Vol 16 (6) ◽  
Author(s):  
Xiangyu Zhu ◽  
Marc Bescond ◽  
Toshiki Onoue ◽  
Gerald Bastard ◽  
Francesca Carosella ◽  
...  
Keyword(s):  
Electron Transport ◽  
Semiconductor Heterostructures ◽  
Double Barrier

Effect of negative electric field on spin-dependent tunneling in double barrier semiconductor heterostructures

2015 ◽  
Vol 15 (11) ◽  
pp. 1421-1427 ◽  
Author(s):  
L.Bruno Chandrasekar ◽  
K. Gnanasekar ◽  
M. Karunakaran ◽  
R. Chandramohan
Keyword(s):  
Electric Field ◽  
Semiconductor Heterostructures ◽  
Double Barrier ◽  
Negative Electric Field

Interlayer mixing in GaAs/AlxGa1-xAs heterostructures as a result of Se+ ion implantation

1988 ◽  
Vol 46 ◽  
pp. 908-909
Author(s):  
E.G. Bithell ◽  
W.M. Stobbs
Keyword(s):  
Ion Implantation ◽  
Diffusion Coefficients ◽  
Dark Field ◽  
Atomic Mass ◽  
Composition Profile ◽  
Semiconductor Heterostructures ◽  
Transmission Electron ◽  
Microscope Images ◽  
Damage Process ◽  
Electron Energy Loss

It is well known that the microstructural consequences of the ion implantation of semiconductor heterostructures can be severe: amorphisation of the damaged region is possible, and layer intermixing can result both from the original damage process and from the enhancement of the diffusion coefficients for the constituents of the original composition profile. A very large number of variables are involved (the atomic mass of the target, the mass and energy of the implant species, the flux and the total dose, the substrate temperature etc.) so that experimental data are needed despite the existence of relatively well developed models for the implantation process. A major difficulty is that conventional techniques (e.g. electron energy loss spectroscopy) have inadequate resolution for the quantification of any changes in the composition profile of fine scale multilayers. However we have demonstrated that the measurement of 002 dark field intensities in transmission electron microscope images of GaAs / AlxGa1_xAs heterostructures can allow the measurement of the local Al / Ga ratio.

Light-Induced Drift of Quantum-Confined Electrons in Semiconductor Heterostructures

1990 ◽  
Author(s):  
Mark I. Stockman ◽  
Lakshmi N. Pandey ◽  
Thomas F. George
Keyword(s):  
Semiconductor Heterostructures ◽  
Quantum Confined

Resonant tunnelling in AlInas/GaInAs double barrier diodes grown by MOCVD

1988 ◽  
Vol 24 (3) ◽  
pp. 187 ◽  
Author(s):  
P.D. Hodson ◽  
D.J. Robbins ◽  
R.H. Wallis ◽  
J.I. Davies ◽  
A.C. Marshall
Keyword(s):  
Double Barrier ◽  
Resonant Tunnelling
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