Giant magnetoresistance dependence on the lateral correlation length of the interface roughness in magnetic superlattices

1999 ◽  
Vol 59 (2) ◽  
pp. 1242-1248 ◽  
Author(s):  
R. Schad ◽  
P. Beliën ◽  
G. Verbanck ◽  
V. V. Moshchalkov ◽  
Y. Bruynseraede ◽  
...  
2015 ◽  
Vol 33 (4) ◽  
pp. 835-840
Author(s):  
J.I. Uba ◽  
A.J. Ekpunobi ◽  
P.I. Ekwo

AbstractIt has not been possible to transform resistivity models in terms of magnetic field in order to account for variation of giant magnetoresistance (GMR) with external magnetic field, which would have led to determination of material properties. This problem is approached mathematically via variation calculus to arrive at an exponential function that fits observed GMR values. Using this model in free electron approximation, the mean Fermi vector, susceptibility and total density of states of a number of metallic multilayers are determined from their reported GMR values. Susceptibility is found to depend on interface roughness and antiferromagnetic (AF) coupling; thus, it gives qualitative measure of interface quality and AF coupling. Comparison of susceptibilities and GMRs of electrodeposited and ion beam sputtered Co/Cu structures shows that a rough interface suppresses GMR in the former but enhances it in the latter.


1993 ◽  
Vol 62 (2) ◽  
pp. 427-430 ◽  
Author(s):  
Gendo Oomi ◽  
Yoshiya Uwatoko ◽  
Kunihide Okada ◽  
Yoshihisa Obi ◽  
Kōki Takanashi ◽  
...  

1996 ◽  
Vol 156 (1-3) ◽  
pp. 339-340 ◽  
Author(s):  
R. Schad ◽  
J. Barnas ◽  
P. Beliën ◽  
G. Verbanck ◽  
C.D. Potter ◽  
...  

2011 ◽  
Vol 21 (3) ◽  
pp. 211
Author(s):  
Tran Thi Hai ◽  
Nguyen Huyen Tung ◽  
Nguyen Trung Hong

We present a theoretical study of the effect from doping of quantum wells (QWs) on enhancement of the mobility limited by one-interface roughness scattering. Within the variational approach, we introduce the enhancement factor defined by the ratio of the overall mobility in symmetric two-side doped square QWs to that in the asymmetric one-side counterpart under the same doping and interface profiles. The enhancement is fixed by the sample parameters such as well width, sheet carrier density, and correlation length. So, we propose two-side doping as an efficient way to upgrade the quality of QWs. The two-interface roughness scattering is also incorporated to make comparison.


1988 ◽  
Vol 61 (21) ◽  
pp. 2472-2475 ◽  
Author(s):  
M. N. Baibich ◽  
J. M. Broto ◽  
A. Fert ◽  
F. Nguyen Van Dau ◽  
F. Petroff ◽  
...  

1990 ◽  
Vol 67 (9) ◽  
pp. 5931-5931 ◽  
Author(s):  
S. S. P. Parkin ◽  
S. Fan ◽  
N. More ◽  
K. P. Roche

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