scholarly journals Density of states and the energy gap in Andreev billiards

1998 ◽  
Vol 58 (9) ◽  
pp. 5783-5788 ◽  
Author(s):  
A. Lodder ◽  
Yu. V. Nazarov
Keyword(s):  
Density Of States ◽  
Energy Gap ◽  
Andreev Billiards

ENERGY GAP DEPENDENCE ON ANION CONCENTRATION FOR GaxIn1-xAsyP1-y QUATERNARY ALLOY BY RECURSION METHOD

2004 ◽  
Vol 18 (18) ◽  
pp. 955-962
Author(s):  
MUSA EL-HASAN ◽  
REZEK ESTATIEH
Keyword(s):  
Density Of States ◽  
Energy Gap ◽  
Local Density ◽  
Tight Binding ◽  
Quaternary Alloy ◽  
Average Density ◽  
Local Density Of States ◽  
Recursion Method ◽  
Orbital Decomposition ◽  
Lattice Matched

Three terminators have been tested, square root terminator, quadreture terminator and linear terminator, it was found that the linear terminator is the best, so it was used in calculating local density of states (LDOS) and it's orbital decomposition, alloy average density of states, and energy gap for different anion concentrations for InP lattice matched alloy. The results were compared with our previous calculations of (LDOS), and results from other methods. Energy gap was compared with experimental measurements. A five orbital sp3s* per atom model was used in the tight-binding representation of the Hamiltonian.

GAP-LABELING PROPERTIES OF THE ENERGY SPECTRUM FOR TWO-DIMENSIONAL FIBONACCI QUASILATTICES

1995 ◽  
Vol 09 (01) ◽  
pp. 55-66
Author(s):  
YOUYAN LIU ◽  
WICHIT SRITRAKOOL ◽  
XIUJUN FU
Keyword(s):  
Energy Spectrum ◽  
Density Of States ◽  
Energy Gap ◽  
Fractional Part ◽  
Numerical Results ◽  
Step Height ◽  
Integrated Density Of States ◽  
Two Dimensional

We have analytically obtained the occupation probabilities on subbands of the hierarchical energy spectrum and the step heights of the integrated density of states for two-dimensional Fibonacci quasilattices. Based on the above results, the gap-labeling properties of the energy spectrum are found, which claim that the step height is equal to {mτ}, where the braces denote the fractional part, and m is an integer that can be used to label the corresponding energy gap. Numerical results confirm these results very well.

Determination of Density of Localized States in Amorphous Silicon Alloys From the Low Field Conductance of Thin N-I-N Diodes

1985 ◽  
Vol 49 ◽  
Author(s):  
Michael Shur ◽  
Michael Hack
Keyword(s):  
Temperature Dependence ◽  
Amorphous Silicon ◽  
Bulk Density ◽  
Density Of States ◽  
Energy Gap ◽  
Localized States ◽  
New Technique ◽  
Silicon Alloys ◽  
Low Field ◽  
Density Of Localized States

AbstractWe describe a new technique to determine the bulk density of localized states in the energy gap of amorphous silicon alloys from the temperature dependence of the low field conductance of n-i-n diodes. This new technique allows us to determine the bulk density of states in the centre of a device, and is very straightforward, involving fewer assumptions than other established techniques. Varying the intrinsic layer thickness allows us to measure the,density of states within approximately 400 meV of midgap.We measured the temperature dependence of the low field conductance of an amorphous silicon alloy n-i-n diode with an intrinsic layer thjckness of 0.45 microns and deduced the density of localised states to be 3xlO16cm−3 eV−1 at approximately 0.5 eV below the bottom of the conduction band. We have also considered the high bias region (the space charge limited current regime) and proposed an interpolation formula which describes the current-voltage characteristics of these structures at all biases and agrees well with our computer simulation based on the solution of the complete system of transport equations.

Paramagnetic impurities in an itinerant antiferromagnet. Theory

1969 ◽  
Vol 47 (5) ◽  
pp. 477-487 ◽  
Author(s):  
S. N. Behera ◽  
K. S. Viswanathan
Keyword(s):  
Density Of States ◽  
Energy Gap ◽  
Impurity Site ◽  
Atom Ratio ◽  
Hartree Fock ◽  
Paramagnetic Impurities ◽  
Spin Dependent Scattering ◽  
Experimental Findings ◽  
Gap Parameter ◽  
Theory And Experiment

The effects of 3-d paramagnetic impurities in an itinerant antiferromagnetic metal are investigated using the Wolff–Clogston model. The changes in the Néel temperature TN, the energy-gap parameter, and the density of states are evaluated in the Hartree–Fock approximation and in the lowest order in the impurity concentration. The results on the changes in TN are compared with the experimental findings on V, Mn, Fe, Co, Ni, Mo, and W impurities in chromium. The agreement between theory and experiment suggests that the changes in TN are essentially due to three mechanisms: (a) the effect due to changes in the electron–atom ratio, (b) the spin-dependent scattering due to paramagnetic impurities, and (c) the changes in the intra-atomic coulomb potential at the impurity site. In the case of Mo and W, the last effect explains the observed decrease in TN in Cr.

scholarly journals Semiclassical Gaps in the Density of States of Chaotic Andreev Billiards

2010 ◽  
Vol 104 (2) ◽  
Author(s):  
Jack Kuipers ◽  
Daniel Waltner ◽  
Cyril Petitjean ◽  
Gregory Berkolaiko ◽  
Klaus Richter
Keyword(s):  
Density Of States ◽  
Andreev Billiards
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