scholarly journals Parity anomaly of bound states and optical properties in semiconductor superlattices with structural defects

1998 ◽  
Vol 58 (8) ◽  
pp. 4629-4635 ◽  
Author(s):  
Xue-Hua Wang ◽  
Ben-Yuan Gu ◽  
Guo-Zhen Yang ◽  
Jian Wang
2013 ◽  
Vol 56 (9) ◽  
pp. 1664-1669 ◽  
Author(s):  
Xin Zhou ◽  
JianShu Fang ◽  
XiangPing Liao ◽  
QianQuan Zhu ◽  
ZhiMin Liu ◽  
...  

2012 ◽  
Vol 20 (4) ◽  
Author(s):  
I. Izhnin ◽  
A. Izhnin ◽  
H. Savytskyy ◽  
O. Fitsych ◽  
N. Mikhailov ◽  
...  

AbstractThe Hall effect and photoluminescence measurements combined with annealing and/or ion milling were used to study the electrical and optical properties of HgCdTe films grown by molecular-beam epitaxy on GaAs substrates with ZnTe and CdTe buffer layers. Unintentional donor doping, likely from the substrate, which resulted in residual donor concentration of the order of 1015 cm−3, was observed in the films. Also, acceptor states, possibly related to structural defects, were observed.


1994 ◽  
Vol 348 ◽  
Author(s):  
N.V. Kilassen

ABSTRACTThe studies of the dependence of the optical properties of various scintillators on intrinsic structural defects have been reviewed. The greater part of the review is devoted to the defects introduced by plastic deformation. A wide range of variations in the light output, spectral distribution, kinetics and other properties has been observed. These defects can be induced during crystal growth, annealing, processing, etc. The proper regulation of the superstructure of intrinsic defects can ensure the production of high quality scintillators having required properties.


Author(s):  
F. Di Stasio ◽  
M. Cucini ◽  
L. Berti ◽  
D. Comoretto ◽  
A. Abbotto ◽  
...  

1990 ◽  
Vol 41 (6) ◽  
pp. 3655-3669 ◽  
Author(s):  
N. F. Johnson ◽  
H. Ehrenreich ◽  
P. M. Hui ◽  
P. M. Young

1991 ◽  
Vol 44 (20) ◽  
pp. 11514-11517 ◽  
Author(s):  
G. H. Cocoletzi ◽  
A. Ramrez Perucho ◽  
W. Luis Mochán

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