Spin-polarized electron tunneling across a disordered insulator

1998 ◽  
Vol 58 (1) ◽  
pp. 432-437 ◽  
Author(s):  
E. Yu. Tsymbal ◽  
D. G. Pettifor
Keyword(s):  
Electron Tunneling ◽  
Spin Polarized

Spin-polarized electron tunneling

1994 ◽  
Vol 238 (4) ◽  
pp. 173-243 ◽  
Author(s):  
R. Meservey ◽  
P.M. Tedrow
Keyword(s):  
Electron Tunneling ◽  
Spin Polarized

scholarly journals Spin-Polarized Electron Tunneling in bccFeCo/MgO/FeCo(001)Magnetic Tunnel Junctions

2012 ◽  
Vol 108 (17) ◽  
Author(s):  
F. Bonell ◽  
T. Hauet ◽  
S. Andrieu ◽  
F. Bertran ◽  
P. Le Fèvre ◽  
...  
Keyword(s):  
Tunnel Junctions ◽  
Electron Tunneling ◽  
Magnetic Tunnel Junctions ◽  
Spin Polarized

Spin-polarized electron tunneling detected using a scanning tunneling microscope

1997 ◽  
Vol 386 (1-3) ◽  
pp. 311-314 ◽  
Author(s):  
Zhanghua Wu ◽  
Tomonobu Nakayama ◽  
Makoto Sakurai ◽  
Masakazu Aono
Keyword(s):  
Scanning Tunneling Microscope ◽  
Electron Tunneling ◽  
Scanning Tunneling ◽  
Tunneling Microscope ◽  
Spin Polarized

Observation of spin-polarized-electron tunneling from a ferromagnet into GaAs

1992 ◽  
Vol 68 (9) ◽  
pp. 1387-1390 ◽  
Author(s):  
Santos F. Alvarado ◽  
Philippe Renaud
Keyword(s):  
Electron Tunneling ◽  
Spin Polarized

Spin-Polarized Electron Tunneling in Ni/Al2O3/Co Junction and Large Magnetoresistance of Ni/Co Double Layers

1992 ◽  
Vol 31 (Part 2, No. 10A) ◽  
pp. L1415-L1416 ◽  
Author(s):  
Yoshitaka Suezawa ◽  
Fumiaki Takahashi ◽  
Yasuo Gond\=o
Keyword(s):  
Electron Tunneling ◽  
Double Layers ◽  
Spin Polarized

scholarly journals SPIN-POLARIZED PHOTOCURRENT THROUGH QUANTUM DOT PHOTODETECTOR

2017 ◽  
Vol 24 (1&2) ◽  
pp. 7-13
Author(s):  
Nguyen Van Hieu ◽  
Nguyen Bich Ha
Keyword(s):  
Quantum Dot ◽  
Electron Tunneling ◽  
Electronic Transitions ◽  
Matrix Elements ◽  
Semiconductor Quantum Dot ◽  
Spin Polarized ◽  
The Matrix ◽  
Electron Photon ◽  
Analytical Expressions ◽  
Polarized Photons

The theory of the photocurrent through the photodetector based on a two-level semiconductor quantum dot (QD) is presented. The analytical expressions of the matrix elements of the electronic transitions generated by the absorption of the circularly polarized photons are derived in the lowest order of the perturbation theory with respect to the electron tunneling interaction as well as the electron-photon interaction. From these expressions the mechanism of the generation of the spin-polarized of electrons in the photocurrent is evident. It follows that the photodetector based on the two-level semiconductor QD can be used as the model of a source of highly spinpolarized electrons.

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