Defect production in tungsten: A comparison between field-ion microscopy and molecular-dynamics simulations

1998 ◽  
Vol 58 (5) ◽  
pp. 2361-2364 ◽  
Author(s):  
Y. Zhong ◽  
K. Nordlund ◽  
M. Ghaly ◽  
R. S. Averback
1997 ◽  
Vol 469 ◽  
Author(s):  
K. Nordlund ◽  
R. S. Averback ◽  
T. Diaz de la Rubia

ABSTRACTWe study the mechanisms of damage production during ion irradiation using molecular dynamics simulations of 400 eV -10 keV collision cascades in four different materials. The materials Al, Si, Cu and Ge are contrasted to each other with respect to the mass, melting temperature and crystal structure. The results show that the crystal structure clearly has the strongest effect on the nature of the damage produced, and elucidate how the open crystal structure affects the nature of defects produced in silicon.


2002 ◽  
Vol 307-311 ◽  
pp. 891-894 ◽  
Author(s):  
A. Kubota ◽  
M.-J. Caturla ◽  
S.A. Payne ◽  
T. Diaz de la Rubia ◽  
J.F. Latkowski

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