Effects of interface-layers composition and strain distribution on the optical transitions of InAs quantum dots on InP

1998 ◽  
Vol 58 (16) ◽  
pp. 10700-10704 ◽  
Author(s):  
H. Folliot ◽  
S. Loualiche ◽  
B. Lambert ◽  
V. Drouot ◽  
A. Le Corre
Keyword(s):  
Quantum Dots ◽  
Strain Distribution ◽  
Optical Transitions ◽  
Inas Quantum Dots ◽  
Interface Layers

Optical transitions of positively charged excitons and biexcitons in single InAs quantum dots

2009 ◽  
Vol 106 (10) ◽  
pp. 103716 ◽  
Author(s):  
X. Y. Chang ◽  
X. M. Dou ◽  
B. Q. Sun ◽  
Y. H. Xiong ◽  
Z. C. Niu ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Optical Transitions ◽  
Inas Quantum Dots ◽  
Positively Charged

scholarly journals Experimental and theoretical study of polarization-dependent optical transitions in InAs quantum dots at telecommunication-wavelengths (1300-1500 nm)

2011 ◽  
Vol 109 (10) ◽  
pp. 104510 ◽  
Author(s):  
Muhammad Usman ◽  
Susannah Heck ◽  
Edmund Clarke ◽  
Peter Spencer ◽  
Hoon Ryu ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Theoretical Study ◽  
Optical Transitions ◽  
Inas Quantum Dots

Strain and optical transitions in InAs quantum dots on (001) GaAs

2001 ◽  
Vol 30 (4) ◽  
pp. 205-213 ◽  
Author(s):  
Y Fu ◽  
F Ferdos ◽  
M Sadeghi ◽  
Q.X Zhao ◽  
S.M Wang ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Optical Transitions ◽  
Inas Quantum Dots

Modification in the structural and optical characteristics of InAs quantum dots by manipulating the strain distribution

2012 ◽  
Vol 60 (3) ◽  
pp. 460-465 ◽  
Author(s):  
Byounggu Jo ◽  
Cheul-Ro Lee ◽  
Jin Soo Kim ◽  
Kihyun Pyun ◽  
Sam Kyu Noh ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Strain Distribution ◽  
Optical Characteristics ◽  
Inas Quantum Dots

An Analytical Approach for Computing the Energy Structure of InAs Quantum Dots

2000 ◽  
Vol 642 ◽  
Author(s):  
Valeria G. Stoleru ◽  
Debdas Pal ◽  
Elias Towe
Keyword(s):  
Quantum Dots ◽  
Strain Distribution ◽  
Optical Transition ◽  
Energy Levels ◽  
Energy Separation ◽  
Energy Structure ◽  
Absorption Data ◽  
Cross Sectional ◽  
Inas Quantum Dots ◽  
Good Agreement

ABSTRACTThe experimental and theoretical results of the electronic structure of self-assembled InAs/GaAs quantum dots are presented. We have performed analytical calculations to obtain the spatial strain distribution in truncated pyramidally-shaped InAs quantum dots grown on (001) GaAs substrates by molecular beam epitaxy. The model reproduces our cross sectional high- resolution transmission electron microscopy observations very well. We further take into account the microscopic effects of the spatial strain distribution on carrier confinement potentials. The effects of piezoelectricity have been neglected in our calculations since they minimally affect the energy levels involved in optical transition. The dots considered here are assumed to be in the strong confinement regime; so Coulomb interaction is neglected. Our calculations of the peak luminescence energies are in good agreement with our experimental results and those of others. The calculated energy separation between the ground and the excited states for electrons and for heavy-holes is in very good agreement with the available photoluminescence, capacitance and far- infrared absorption data.

Magnetotunneling spectroscopy imaging of electron wave functions in self-assembled InAs quantum dots

2001 ◽  
Vol 171 (12) ◽  
pp. 1365
Author(s):  
E.E. Vdovin ◽  
Yu.N. Khanin ◽  
Yu.V. Dubrovskii ◽  
A. Veretennikov ◽  
A. Levin ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Wave Functions ◽  
Electron Wave ◽  
Inas Quantum Dots ◽  
Self Assembled

Electrically Driven Near-Infrared Broadband Light Source with Gaussian-Like Spectral Shape Based on Multiple InAs Quantum Dots

2016 ◽  
Vol E99.C (3) ◽  
pp. 381-384 ◽  
Author(s):  
Takuma YASUDA ◽  
Nobuhiko OZAKI ◽  
Hiroshi SHIBATA ◽  
Shunsuke OHKOUCHI ◽  
Naoki IKEDA ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Light Source ◽  
Near Infrared ◽  
Spectral Shape ◽  
Inas Quantum Dots ◽  
Broadband Light Source
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