Electrical transport properties of highly dopedPrBa2−xSrxCu3O7thin films prepared by pulsed laser deposition

1998 ◽  
Vol 58 (2) ◽  
pp. 1068-1072 ◽  
Author(s):  
Y. G. Zhao ◽  
Z. W. Dong ◽  
M. Rajeswari ◽  
R. P. Sharma ◽  
T. Venkatesan
Keyword(s):  
Pulsed Laser Deposition ◽  
Transport Properties ◽  
Electrical Transport ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Electrical Transport Properties

Ca2RuO4Thin Film Growth by Pulsed Laser Deposition

2004 ◽  
Vol 819 ◽  
Author(s):  
Xu Wang ◽  
Yan Xin ◽  
Hanoh Lee ◽  
Patricia A. Stampe ◽  
Robin J. Kennedy ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Electrical Transport ◽  
Film Growth ◽  
Pulsed Laser ◽  
High Sensitivity ◽  
Laser Deposition ◽  
Chemical Doping ◽  
Bulk Single Crystal ◽  
Electrical Transport Properties

AbstractBulk Ca2RuO4 is an antiferromagnetic Mott insulator with the metal-insulator transition above room temperature, and the Neel temperature at 113 K. There is strong coupling between crystal structures and magnetic, electronic phase transitions in this system. It exhibits high sensitivity to chemical doping and pressure that makes it very interesting material to study. We have epitaxially grown Ca2RuO4 thin films on LaAlO3 substrates by pulsed laser deposition technique. Growth conditions such as substrate temperature and O2 pressure were systematically varied in order to achieve high quality single-phase film. Crystalline quality and orientation of these films were characterized by X-ray diffractometry. Microstructure of the thin films was examined by transmission electron microscopy. The electrical transport properties were also measured and compared with bulk single crystal.

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