Double sign reversal of the Hall effect in the mixed state ofYBa2Cu3Ox

1998 ◽  
Vol 57 (14) ◽  
pp. 8662-8666 ◽  
Author(s):  
K. Nakao ◽  
K. Hayashi ◽  
T. Utagawa ◽  
Y. Enomoto ◽  
N. Koshizuka
Keyword(s):  
Hall Effect ◽  
Mixed State ◽  
Sign Reversal

Double sign reversal of the Hall effect in the mixed state of L2−xCexCuO4 crystals

1994 ◽  
Vol 235-240 ◽  
pp. 3177-3178 ◽  
Author(s):  
M. Cagigal ◽  
A. Seffar ◽  
J. Fontcuberta ◽  
M.A. Crusellas ◽  
J.L. Vincent ◽  
...  
Keyword(s):  
Hall Effect ◽  
Mixed State ◽  
Sign Reversal

scholarly journals Interface-induced sign reversal of the anomalous Hall effect in magnetic topological insulator heterostructures

2021 ◽  
Vol 12 (1) ◽  
Author(s):  
Fei Wang ◽  
Xuepeng Wang ◽  
Yi-Fan Zhao ◽  
Di Xiao ◽  
Ling-Jie Zhou ◽  
...  
Keyword(s):  
Hall Effect ◽  
Electric Fields ◽  
First Principles ◽  
Berry Phase ◽  
Condensed Matter ◽  
Anomalous Hall Effect ◽  
First Principles Calculations ◽  
Sign Reversal ◽  
Berry Curvature ◽  
Topological Materials

AbstractThe Berry phase picture provides important insights into the electronic properties of condensed matter systems. The intrinsic anomalous Hall (AH) effect can be understood as the consequence of non-zero Berry curvature in momentum space. Here, we fabricate TI/magnetic TI heterostructures and find that the sign of the AH effect in the magnetic TI layer can be changed from being positive to negative with increasing the thickness of the top TI layer. Our first-principles calculations show that the built-in electric fields at the TI/magnetic TI interface influence the band structure of the magnetic TI layer, and thus lead to a reconstruction of the Berry curvature in the heterostructure samples. Based on the interface-induced AH effect with a negative sign in TI/V-doped TI bilayer structures, we create an artificial “topological Hall effect”-like feature in the Hall trace of the V-doped TI/TI/Cr-doped TI sandwich heterostructures. Our study provides a new route to create the Berry curvature change in magnetic topological materials that may lead to potential technological applications.

Sign reversal of anomalous Hall effect derived from the transformation of scattering effect in cluster-assembled Ni0.8Fe0.2 nanostructural films

Nanoscale ◽  
2021 ◽  
Author(s):  
Ning Jiang ◽  
Bo Yang ◽  
Yulong Bai ◽  
Yaoxiang Jiang ◽  
Shifeng Zhao
Keyword(s):  
Hall Effect ◽  
Anomalous Hall Effect ◽  
Sign Reversal ◽  
Surface And Interface ◽  
Scattering Effect ◽  
Single Substance ◽  
Interface Scattering ◽  
Hall Effects

Both surface and interface scattering induced a sign reversal of anomalous Hall effects (AHE) in a few heterostructures. The sign reversal exiting in a single-substance can clarify the role of...

Anisotropy of the Hall effect in the mixed state

1994 ◽  
Vol 235-240 ◽  
pp. 3145-3146 ◽  
Author(s):  
P. Vašek ◽  
I. Janeček ◽  
V. Plecháček
Keyword(s):  
Hall Effect ◽  
Mixed State

scholarly journals Hall effect in the mixed state of YBa2Cu3Oy films

1994 ◽  
Vol 194-196 ◽  
pp. 2109-2110 ◽  
Author(s):  
H.E. Horng ◽  
C.H. Lin ◽  
D.S. Lee ◽  
H.H. Sung ◽  
H.C. Yang
Keyword(s):  
Hall Effect ◽  
Mixed State

Double Sign Reversal of the Hall Effect in YBa2Cu3Ox Thin Films

1998 ◽  
pp. 87-90
Author(s):  
Koichi Nakao ◽  
Kunihiko Hayashi ◽  
Tadashi Utagawa ◽  
Youichi Enomoto ◽  
Naoki Koshizuka
Keyword(s):  
Thin Films ◽  
Hall Effect ◽  
Sign Reversal

Hall-effect sign reversal inCaRuO3andSrRuO3thin films

1996 ◽  
Vol 54 (13) ◽  
pp. 8996-8999 ◽  
Author(s):  
S. C. Gausepohl ◽  
Mark Lee ◽  
R. A. Rao ◽  
C. B. Eom
Keyword(s):  
Hall Effect ◽  
Sign Reversal
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