Dynamics of excitons in CuBr nanocrystals: Spectral-hole burning and transient four-wave-mixing measurements

1998 ◽  
Vol 57 (3) ◽  
pp. 1774-1783 ◽  
Author(s):  
J. Valenta ◽  
J. Moniatte ◽  
P. Gilliot ◽  
B. Hönerlage ◽  
J. B. Grun ◽  
...  
1994 ◽  
Vol 64 (19) ◽  
pp. 2492-2494 ◽  
Author(s):  
A. D’Ottavi ◽  
E. Iannone ◽  
A. Mecozzi ◽  
S. Scotti ◽  
P. Spano ◽  
...  

2020 ◽  
Vol 22 (8) ◽  
pp. 085401
Author(s):  
J Lopez ◽  
H Kerbertt ◽  
M Plata ◽  
E Hernandez ◽  
S Stepanov

1987 ◽  
Vol 48 (C5) ◽  
pp. C5-511-C5-515 ◽  
Author(s):  
J. L. OUDAR ◽  
J. DUBARD ◽  
F. ALEXANDRE ◽  
D. HULIN ◽  
A. MIGUS ◽  
...  

1998 ◽  
Vol 512 ◽  
Author(s):  
C. Hecht ◽  
R. Kummer ◽  
A. Winnacker

ABSTRACTIn the context of spectral-hole burning experiments in 4H- and 6H-SiC doped with vanadium the energy positions of the V4+/5+ level in both polytypes were determined in order to resolve discrepancies in literature. From these numbers the band offset of 6H/4H-SiC is calculated by using the Langer-Heinrich rule, and found to be of staggered type II. Furthermore the experiments show that thermally stable electronic traps exist in both polytypes at room temperature and considerably above, which may result in longtime transient shifts of electronic properties.


Sign in / Sign up

Export Citation Format

Share Document