Theoretical study of shallow acceptor states under the influence of both a confinement potential and a deformation potential

1998 ◽  
Vol 57 (20) ◽  
pp. 13033-13038 ◽  
Author(s):  
Q. X. Zhao ◽  
M. Willander
Keyword(s):  
Theoretical Study ◽  
Deformation Potential ◽  
Shallow Acceptor ◽  
Confinement Potential

A Theoretical Study on the Pressure Dependence of the Band Gap in ${\rm A^{I}B^{III}C^{VI}_2}$ Compounds

1997 ◽  
Vol 11 (16) ◽  
pp. 1959-1967 ◽  
Author(s):  
R. Asokamani ◽  
R. Mercy Amirthakumari ◽  
G. Pari
Keyword(s):  
Theoretical Study ◽  
Energy Gap ◽  
Ambient Pressure ◽  
Chalcopyrite Structure ◽  
Deformation Potential ◽  
Equilibrium Lattice Constant ◽  
Self Consistent ◽  
Direct Energy ◽  
Experimental Values ◽  
Direct Energy Gap

The self-consistent scalar relativistic band structure for AgGaX 2 (X = S, Se, Te) performed in chalcopyrite structure using the TBLMTO method at various pressures are reported here. Empty spheres were introduced in the calculations as the chalcopyrite structure is loosely packed. From the total energy calculations, the equilibrium lattice constant and the bulk modulus at zero pressure were calculated and these values agree well with the reported experimental values. All these compounds are found to have direct energy gap at ambient pressure with the gap widening with increased pressures which are in agreement with the experimental results. The deformation potential, dE g /dP for the compounds are also reported here. The metallisation volumes are calculated and the possibility of observing superconductivity in these compounds is discussed.

The magnetization and magnetic susceptibility of GaAs Gaussian quantum dot with donor impurity in a magnetic field

2019 ◽  
Vol 33 (34) ◽  
pp. 1950422 ◽  
Author(s):  
Mohammad Elsaid ◽  
Mohamoud Ali ◽  
Ayham Shaer
Keyword(s):  
Magnetic Field ◽  
Magnetic Susceptibility ◽  
Quantum Dot ◽  
Theoretical Study ◽  
Donor Impurity ◽  
Confinement Potential ◽  
Potential Depth ◽  
Diagonalization Method ◽  
Electron Quantum ◽  
Exact Diagonalization Method

We present a theoretical study to investigate the effect of donor impurity on the magnetization (M) and the magnetic susceptibility [Formula: see text] of single electron quantum dot (QD) with Gaussian confinement in the presence of a magnetic field. We solve the Hamiltonian of this system, including the spin, by using the exact diagonalization method. The ground state binding energy (BE) of an electron has been shown as a function of QD radius and confinement potential depth. The behaviors of the magnetization and the magnetic susceptibility of a QD have been studied as a function of temperature, confinement potential depth, quantum radius and magnetic field. We have shown the effect of donor impurity on the magnetization and magnetic susceptibility curves of Gaussian quantum dot (GQD).

The magnetic field dependence of the deformation potential materials in the square well confinement potential

Open Physics ◽  
2008 ◽  
Vol 6 (4) ◽  
Author(s):  
Joung Sug ◽  
Su Lee ◽  
Jong Kim
Keyword(s):  
Magnetic Field ◽  
Landau Level ◽  
Transition Process ◽  
Quantum Transition ◽  
Transition Line ◽  
Deformation Potential ◽  
Confinement Potential ◽  
Level Transition ◽  
Square Well ◽  
The Magnetic Field

AbstractWe study the optical Quantum Transition Line Shapes (QTLS) which show the absorption power and the Quantum Transition Line Widths (QTLW) of electron-deformation potential phonon interacting systems. In order to analyze the quantum transition, we compare the magnetic field dependencies of the QTLWand the QTLS on two transition processes, namely the intra-Landau level transition process and the inter-Landau level transition process. We apply the Quantum Transport theory (QTR) to the system in the confinement of electrons by square well confinement potential. We use the projected Liouville equation method with Equilibrium Average Projection Scheme (EAPS).

On the photoconductivity of hot electrons in semiconductors at low temperatures

1983 ◽  
Vol 61 (6) ◽  
pp. 821-824
Author(s):  
E. F. El-Wahidy
Keyword(s):  
Low Temperatures ◽  
Theoretical Study ◽  
Zero Point ◽  
Potential Scattering ◽  
Hot Electrons ◽  
Average Lifetime ◽  
Deformation Potential ◽  
Acoustic Phonons ◽  
Temperature Dependences ◽  
Point Lattice

A theoretical study is made of the photoconductivity of hot photoelectrons interacting with acoustic phonons in n-type germanium at low temperature, T = 4 K, when the equipartition of the energy of phonons is not obeyed. Assuming that the energy relaxation of photoelectrons takes place by the spontaneous emission of acoustic phonons, the energy distribution of photoelectrons is obtained using the deformation potential scattering by acoustic phonons for the zero point lattice. The distribution function is then used in calculating the photoconductivity and average lifetime of photoelectrons. New temperature dependences of the photoconductivity and average lifetime arc obtained. It is shown that the new results differ from those reported when equipartition is obeyed.

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