Multichannel impurity scattering in a Tomonaga-Luttinger liquid

1998 ◽  
Vol 57 (19) ◽  
pp. 12104-12110 ◽  
Author(s):  
Yu-Liang Liu
Keyword(s):  
Luttinger Liquid ◽  
Impurity Scattering

Single Impurity Scattering in One-Channel Spinless Luttinger Liquid

2008 ◽  
Vol 25 (6) ◽  
pp. 2211-2214 ◽  
Author(s):  
Han Yue-Wu ◽  
Xie Hong-Yi ◽  
Liu Yu-Liang ◽  
Cai Shao-Hong ◽  
Hu Lin
Keyword(s):  
Luttinger Liquid ◽  
Impurity Scattering ◽  
Single Impurity

Deep Impurities with Collision Delay

2018 ◽  
Author(s):  
Klaus Morawetz
Keyword(s):  
Wave Function ◽  
Kinetic Equation ◽  
Elastic Scattering ◽  
Response Function ◽  
Plasma Oscillation ◽  
Impurity Scattering ◽  
Fermi Momentum ◽  
Screening Length ◽  
Plasma Mode ◽  
Dissipative Mechanism

The linearised nonlocal kinetic equation is solved analytically for impurity scattering. The resulting response function provides the conductivity, plasma oscillation and Fermi momentum. It is found that virial corrections nearly compensate the wave-function renormalizations rendering the conductivity and plasma mode unchanged. Due to the appearance of the correlated density, the Luttinger theorem does not hold and the screening length is influenced. Explicit results are given for a typical semiconductor. Elastic scattering of electrons by impurities is the simplest but still very interesting dissipative mechanism in semiconductors. Its simplicity follows from the absence of the impurity dynamics, so that individual collisions are described by the motion of an electron in a fixed potential.

scholarly journals Effect of Oxygen Source on the Various Properties of SnO2 Thin Films Deposited by Plasma-Enhanced Atomic Layer Deposition

Coatings ◽  
2020 ◽  
Vol 10 (7) ◽  
pp. 692
Author(s):  
Jong Hyeon Won ◽  
Seong Ho Han ◽  
Bo Keun Park ◽  
Taek-Mo Chung ◽  
Jeong Hwan Han
Keyword(s):  
Electrical Properties ◽  
Atomic Layer Deposition ◽  
Carrier Concentration ◽  
High Mobility ◽  
Impurity Scattering ◽  
Atomic Layer ◽  
Growth Behavior ◽  
Layer Deposition ◽  
Growth Feature ◽  
O2 Plasma

Herein, we performed a comparative study of plasma-enhanced atomic layer deposition (PEALD) of SnO2 films using Sn(dmamp)2 as the Sn source and either H2O plasma or O2 plasma as the oxygen source in a wide temperature range of 100–300 °C. Since the type of oxygen source employed in PEALD determines the growth behavior and resultant film properties, we investigated the growth feature of both SnO2 PEALD processes and the various chemical, structural, morphological, optical, and electrical properties of SnO2 films, depending on the oxygen source. SnO2 films from Sn(dmamp)2/H2O plasma (SH-SnO2) and Sn(dmamp)2/O2 plasma (SO-SnO2) showed self-limiting atomic layer deposition (ALD) growth behavior with growth rates of ~0.21 and 0.07–0.13 nm/cycle, respectively. SO-SnO2 films showed relatively larger grain structures than SH-SnO2 films at all temperatures. Interestingly, SH-SnO2 films grown at high temperatures of 250 and 300 °C presented porous rod-shaped surface morphology. SO-SnO2 films showed good electrical properties, such as high mobility up to 27 cm2 V−1·s−1 and high carrier concentration of ~1019 cm−3, whereas SH-SnO2 films exhibited poor Hall mobility of 0.3–1.4 cm2 V−1·s−1 and moderate carrier concentration of 1 × 1017–30 × 1017 cm−3. This may be attributed to the significant grain boundary and hydrogen impurity scattering.

scholarly journals Nonequilibrium dc noise in a Luttinger liquid with an impurity

1996 ◽  
Vol 54 (15) ◽  
pp. 10845-10854 ◽  
Author(s):  
P. Fendley ◽  
H. Saleur
Keyword(s):  
Luttinger Liquid

scholarly journals Gate-tunable plasmons in mixed-dimensional van der Waals heterostructures

2021 ◽  
Vol 12 (1) ◽  
Author(s):  
Sheng Wang ◽  
SeokJae Yoo ◽  
Sihan Zhao ◽  
Wenyu Zhao ◽  
Salman Kahn ◽  
...  
Keyword(s):  
Carbon Nanotubes ◽  
Carrier Density ◽  
Electromagnetic Interaction ◽  
Luttinger Liquid ◽  
Fundamental Physics ◽  
Metallic Structures ◽  
One Dimensional ◽  
Figures Of Merit ◽  
Electrostatic Gating ◽  
Plasmon Dispersion

AbstractSurface plasmons, collective electromagnetic excitations coupled to conduction electron oscillations, enable the manipulation of light–matter interactions at the nanoscale. Plasmon dispersion of metallic structures depends sensitively on their dimensionality and has been intensively studied for fundamental physics as well as applied technologies. Here, we report possible evidence for gate-tunable hybrid plasmons from the dimensionally mixed coupling between one-dimensional (1D) carbon nanotubes and two-dimensional (2D) graphene. In contrast to the carrier density-independent 1D Luttinger liquid plasmons in bare metallic carbon nanotubes, plasmon wavelengths in the 1D-2D heterostructure are modulated by 75% via electrostatic gating while retaining the high figures of merit of 1D plasmons. We propose a theoretical model to describe the electromagnetic interaction between plasmons in nanotubes and graphene, suggesting plasmon hybridization as a possible origin for the observed large plasmon modulation. The mixed-dimensional plasmonic heterostructures may enable diverse designs of tunable plasmonic nanodevices.

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