Optically active hydrogen dimers in crystalline silicon

1997 ◽  
Vol 56 (24) ◽  
pp. R15517-R15520 ◽  
Author(s):  
A. N. Safonov ◽  
E. C. Lightowlers ◽  
G. Davies
Keyword(s):  
Crystalline Silicon ◽  
Optically Active ◽  
Active Hydrogen

Microscopic Structure of Er-Related Optically Active Centers in Crystalline Silicon

2003 ◽  
Vol 90 (6) ◽  
Author(s):  
N. Q. Vinh ◽  
H. Przybylińska ◽  
Z. F. Krasil’nik ◽  
T. Gregorkiewicz
Keyword(s):  
Crystalline Silicon ◽  
Optically Active ◽  
Microscopic Structure ◽  
Active Centers

scholarly journals Optically active hydrogen dimers in silicon

1999 ◽  
Vol 273-274 ◽  
pp. 176-179 ◽  
Author(s):  
B Hourahine ◽  
R Jones ◽  
A.N Safonov ◽  
S Öberg ◽  
P.R Briddon ◽  
...  
Keyword(s):  
Optically Active ◽  
Active Hydrogen

Methanolysis of Optically Active Hydrogen 2,4-Dimethylhexyl-4-phthalate1,2

1953 ◽  
Vol 75 (19) ◽  
pp. 4733-4738 ◽  
Author(s):  
W. von E. Doering ◽  
Harold H. Zeiss
Keyword(s):  
Optically Active ◽  
Active Hydrogen

Optical analysis of ink and other contaminants in process waters

TAPPI Journal ◽  
2012 ◽  
Vol 11 (8) ◽  
pp. 51-58
Author(s):  
ANTTI HAAPALA ◽  
MIKA KÖRKKÖ ◽  
ELISA KOIVURANTA ◽  
JOUKO NIINIMÄKI
Keyword(s):  
Optically Active ◽  
Process Water ◽  
Paper Machine ◽  
Optical Analysis ◽  
Direct Process ◽  
Active Components ◽  
Water Contaminants ◽  
Dependent Measurement ◽  
Measurement Methodology

Analysis methods developed specifically to determine the presence of ink and other optically active components in paper machine white waters or other process effluents are not available. It is generally more interest¬ing to quantify the effect of circulation water contaminants on end products. This study compares optical techniques to quantify the dirt in process water by two methods for test media preparation and measurement: direct process water filtration on a membrane foil and low-grammage sheet formation. The results show that ink content values obtained from various analyses cannot be directly compared because of fundamental issues involving test media preparation and the varied methodologies used to formulate the results, which may be based on different sets of assumptions. The use of brightness, luminosity, and reflectance and the role of scattering measurements as a part of ink content analysis are discussed, along with fine materials retention and measurement media selection. The study concludes with practical tips for case-dependent measurement methodology selection.

Recombination Characteristics of Single-Crystalline Silicon Wafers with a Damaged Near-Surface Layer

2013 ◽  
Vol 58 (2) ◽  
pp. 142-150 ◽  
Author(s):  
A.V. Sachenko ◽  
◽  
V.P. Kostylev ◽  
V.G. Litovchenko ◽  
V.G. Popov ◽  
...  
Keyword(s):  
Surface Layer ◽  
Crystalline Silicon ◽  
Silicon Wafers ◽  
Single Crystalline Silicon ◽  
Near Surface ◽  
Single Crystalline

Formation of Nanocrystalline Silicon in Tin-Doped Amorphous Silicon Films

2020 ◽  
Vol 65 (3) ◽  
pp. 236
Author(s):  
R. M. Rudenko ◽  
O. O. Voitsihovska ◽  
V. V. Voitovych ◽  
M. M. Kras’ko ◽  
A. G. Kolosyuk ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Crystalline Silicon ◽  
Solid Phase ◽  
Nanocrystalline Silicon ◽  
Recrystallization Temperature ◽  
Nanocrystalline Phase ◽  
Silicon Phase ◽  
Silicon Nanocrystallites ◽  
Lower Temperature ◽  
Two Stages

The process of crystalline silicon phase formation in tin-doped amorphous silicon (a-SiSn) films has been studied. The inclusions of metallic tin are shown to play a key role in the crystallization of researched a-SiSn specimens with Sn contents of 1–10 at% at temperatures of 300–500 ∘C. The crystallization process can conditionally be divided into two stages. At the first stage, the formation of metallic tin inclusions occurs in the bulk of as-precipitated films owing to the diffusion of tin atoms in the amorphous silicon matrix. At the second stage, the formation of the nanocrystalline phase of silicon occurs as a result of the motion of silicon atoms from the amorphous phase to the crystalline one through the formed metallic tin inclusions. The presence of the latter ensures the formation of silicon crystallites at a much lower temperature than the solid-phase recrystallization temperature (about 750 ∘C). A possibility for a relation to exist between the sizes of growing silicon nanocrystallites and metallic tin inclusions favoring the formation of nanocrystallites has been analyzed.

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