Atomic process of epitaxial growth of gold on magnesium oxide studied by cross-sectional time-resolved high-resolution electron microscopy

1997 ◽  
Vol 56 (16) ◽  
pp. R10079-R10088 ◽  
Author(s):  
Tokushi Kizuka ◽  
Nobuo Tanaka
Keyword(s):  
Electron Microscopy ◽  
High Resolution ◽  
Epitaxial Growth ◽  
Magnesium Oxide ◽  
High Resolution Electron Microscopy ◽  
Cross Sectional ◽  
Time Resolved ◽  
Atomic Process ◽  
Resolution Electron

Cross-sectional time-resolved high-resolution electron microscopy of epitaxial growth of Au on MgO

1996 ◽  
Vol 54 ◽  
pp. 982-983
Author(s):  
T. Kizuka ◽  
N. Tanaka
Keyword(s):  
Electron Microscopy ◽  
High Resolution ◽  
Epitaxial Growth ◽  
High Resolution Electron Microscopy ◽  
Vacuum Deposition ◽  
Cross Sectional ◽  
Time Resolved ◽  
Plan View ◽  
Resolution Electron

Vapor phase epitaxial growth techniques are indispensable for production of thin film electric devices. Various structural analyses have been attempted to evaluate the epitaxial growth. Conventional transmission electron microscopy (CTEM) is a most useful method. In particular, it is known that a plan-view time-resolved CTEM of in-situ vacuum-deposition in a microscope can analyze each process of epitaxial growth. The nucleation in vacuum-deposition was also in-situ observed by a time-resolved high resolution electron microscopy (TRHREM). However many unresolved problems still remain in the studies of the epitaxial growth because it is difficult to observe the epitaxial interfaces less than a few nanometer under appropriate conditions. Much more advanced techniques are required for electron microscopy to obtain detailed information.In the present study, a TRHREM for the cross-sectional observation was developed to elucidate the epitaxial growth process in vacuum-deposition.Gold (Au) was vacuum-deposited on (001) surfaces of the magnesium oxide (MgO) substrates at room temperature in a specimen chamber of a 200-kV high-resolution electron microscope (JEOL, JEM2010).

Time-resolved high-resolution electron microscopy of structural stability in mgo clusters

1996 ◽  
Vol 54 ◽  
pp. 672-673
Author(s):  
T. Kizuka ◽  
N. Tanaka
Keyword(s):  
Electron Microscopy ◽  
High Resolution ◽  
Magnesium Oxide ◽  
Structural Stability ◽  
High Resolution Electron Microscopy ◽  
Video Tape ◽  
Solid State Physics ◽  
Time Resolved ◽  
Resolution Electron ◽  
Structural And Functional Properties

Structure and stability of atomic clusters have been studied by time-resolved high-resolution electron microscopy (TRHREM). Typical examples are observations of structural fluctuation in gold (Au) clusters supported on silicon oxide films, graphtized carbon films and magnesium oxide (MgO) films. All the observations have been performed on the clusters consisted of single metal element. Structural stability of ceramics clusters, such as metal-oxide, metal-nitride and metal-carbide clusters, has not been observed by TRHREM although the clusters show anomalous structural and functional properties concerning to solid state physics and materials science.In the present study, the behavior of ceramic, magnesium oxide (MgO) clusters is for the first time observed by TRHREM at 1/60 s time resolution and at atomic resolution down to 0.2 nm.MgO and gold were subsequently deposited on sodium chloride (001) substrates. The specimens, single crystalline MgO films on which Au particles were dispersed were separated in distilled water and observed by using a 200-kV high-resolution electron microscope (JEOL, JEM2010) equipped with a high sensitive TV camera and a video tape recorder system.

Interfacial Atomic Structures During Cobalt Silicidation

1990 ◽  
Vol 202 ◽  
Author(s):  
A. Catana ◽  
P.E. Schmid
Keyword(s):  
Electron Microscopy ◽  
High Resolution ◽  
High Resolution Electron Microscopy ◽  
Atomic Scale ◽  
Type B ◽  
Cross Sectional ◽  
Atomic Structures ◽  
Resolution Electron ◽  
Predominant Orientation ◽  
Lower Temperature

ABSTRACTHigh Resolution Electron Microscopy (HREM) and image calculations are combined to study microstructural changes related to the CoSi/Si-CoSi/CoSi2/Si-CoSi2/Si transformations. The samples are prepared by UHV e-beam evaporation of Co layers (2 nm) followed by annealing at 300°C or 400°C. Cross-sectional observations at an atomic scale show that the silicidation of Co at the lower temperature yields epitaxial CoSi/Si domains such that [111]Si // [111]CoSi and <110>Si // <112>CoSi. At about 400°C CoSi2 nucleates at the CoSi/Si interface. During the early stages of this chemical reaction, an epitaxial CoSi/CoSi2/Si system is observed. The predominant orientation is such that (021) CoSi planes are parallel to (220) CoSi2 planes, the CoSi2/Si interface being of type B. The growth of CoSi2 is shown to proceed at the expense of both CoSi and Si.

Study of the growth mechanism of highly in-plane aligned α-axis YBa2Cu3O7−x thin films on LaSrGaO4 substrate by high resolution electron microscopy

1996 ◽  
Vol 11 (12) ◽  
pp. 2951-2954 ◽  
Author(s):  
J. G. Wen ◽  
S. Mahajan ◽  
H. Ohtsuka ◽  
T. Morishita ◽  
N. Koshizuka
Keyword(s):  
Thin Film ◽  
Electron Microscopy ◽  
Thin Films ◽  
High Resolution ◽  
High Resolution Electron Microscopy ◽  
Cross Sectional ◽  
Plan View ◽  
Oriented Film ◽  
Resolution Electron ◽  
Average Size

Highly in-plane aligned α-axis YBa2Cu3O7−x thin films deposited on (100) LaSrGaO4 substrates by a self-template method were studied by high-resolution electron microscopy along three orthogonal 〈100〉 axes of the substrate. Plan-view images confirm that the majority of the film preferentially aligns across the entire substrate except for very few misaligned domains with average size 10 nm2. Cross-sectional images along the [100] orientation of YBa2Cu3O7−x reveal that in-plane aligned α-axis YBa2Cu3O7−x is grown on a template layer dominated by c-axis oriented film. This strongly suggests that the in-plane alignment of α-axis YBa2Cu3O7−x thin films on (100) LaSrGaO4 substrates is governed by the different stresses along the b and c axes of the substrate. Cross-sectional images along [001] of the YBa2Cu3O7—x thin film reveal that the 90° domains easily nucleate in the region between α-axis YBa2Cu3O7—x and the YBa4Cu3Ox phase. Cracks along the (001) plane of YBa2Cu3O7−x are found to be due to the large mismatch between the c parameters of the thin film and substrate.

A HREM study of V/Al2O3 interface

1992 ◽  
Vol 50 (1) ◽  
pp. 146-147
Author(s):  
Y. Ikuhara ◽  
P. Pirouz ◽  
A. H. Heuer ◽  
S. Yadavalli ◽  
C. P. Flynn
Keyword(s):  
Electron Microscopy ◽  
Electron Microscope ◽  
High Resolution ◽  
Substrate Temperature ◽  
Molecular Beam ◽  
High Resolution Electron Microscopy ◽  
Interface Structure ◽  
Cross Sectional ◽  
Plan View ◽  
Resolution Electron

The interface structure between vanadium and the R-plane of sapphire (α-Al2O3) was studied by conventional and cross-sectional high resolution electron microscopy (HREM) to clarify the atomic structure of the interface.A 57 nm thick vanadium film was deposited on the (1102) (R) plane of sapphire by molecular beam epitaxy (MBE) at a substrate temperature of 920 K in a vacuum of 10-10torr. The HREM observations of the interface were done from three directions: two cross-sectional views (parallel to [0221]Al2O3 and [1120]Al2O3) and a plan view (parallel to [2201]Al2O3) by a top-entry JEOL 4000EX electron microscope (400 kV).

Time-resolved high-resolution electron microscopy of structural transformation in nanocrystalline ZnO films

1996 ◽  
Vol 54 ◽  
pp. 978-979
Author(s):  
T. Kizuka ◽  
N. Tanaka
Keyword(s):  
Electron Microscopy ◽  
High Resolution ◽  
Grain Boundary ◽  
Structural Transformation ◽  
Superplastic Deformation ◽  
Boundary Migration ◽  
High Resolution Electron Microscopy ◽  
Grain Boundary Migration ◽  
Time Resolved ◽  
Resolution Electron

Mechanical properties of polycrystalline materials become anomalous when the grain size and grain boundary length decrease to nanometer scale. For example, ductility and toughness increase significantly in nanometer-grained ceramics (nanocrystalline ceramics). Ductility increases due to appearance of fine-grained-superplastic deformation. Grain boundary migration and interface migration are fundamental processes of the superplastic deformation. Structural transformation of fine grains is a factor which limits the toughness in polycrystalline ceramics because the transformation relaxes internal strain. The behavior of grain boundaries and interfaces, such as diffusion bonding and Czochralski-type crystal growth at ambient temperature, can be analyzed by a time-resolved high-resolution electron microscopy (TRHREM) developed by Kizuka et al.,In the present study, grain boundary migration and successive transformation of crystal structure in nanocrystalline ZnO were investigated by TRHREM.Zinc oxide was vacuum-deposited on air-cleaved (001) surfaces of sodium chloride at 200°C. TRHREM was carried out at room temperature using a 200-kV electron microscope (JEOL, JEM2010) equipped with a high sensitive TV camera and a video tape recorder.

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