Deformation patterns in thin films under uniform laser irradiation

1997 ◽  
Vol 56 (23) ◽  
pp. 15361-15377 ◽  
Author(s):  
D. Walgraef ◽  
N. M. Ghoniem ◽  
J. Lauzeral
Keyword(s):  
Thin Films ◽  
Laser Irradiation ◽  
Deformation Patterns

Laser-Induced Deformation Patterns in Thin Films and Surfaces

1999 ◽  
Vol 121 (2) ◽  
pp. 182-188 ◽  
Author(s):  
Daniel Walgraef
Keyword(s):  
Thin Films ◽  
Laser Irradiation ◽  
Surface Deformation ◽  
Laser Intensity ◽  
Laser Beams ◽  
Experimental Investigations ◽  
Relative Importance ◽  
Periodic Patterns ◽  
One Dimensional ◽  
Deformation Patterns

The coupling between surface deformation and defect motion may be at the origin of deformation patterns in thin films under laser irradiation. We analyze the dynamics of laser-induced vacancy densities and deformation fields and show how it triggers deformational instabilities, in the case of uniform and focused laser irradiation. Pattern selection analysis is performed, through linear, nonlinear, and numerical methods. In irradiation with extended beams, we show that, according to the relative importance of nonlinearities arising from the defect or from the bending dynamics, square, hexagonal or even quasi-periodic patterns are selected. It appears, furthermore, that one-dimensional gratings are always unstable in isotropic systems. In irradiation with focused laser beams, rose deformation patterns, with petal number increasing with laser intensity, naturally arise in this model, in qualitative agreement with experimental observations. These results claim for more systematic and quantitative experimental investigations of deformational pattern formation under laser irradiation.

PULSED LASER IRRADIATION OF NICKEL THIN FILMS ON SILICON

1983 ◽  
Vol 44 (C5) ◽  
pp. C5-449-C5-454 ◽  
Author(s):  
P. Baeri ◽  
M. G. Grimaldi ◽  
E. Rimini ◽  
G. Celotti
Keyword(s):  
Thin Films ◽  
Laser Irradiation ◽  
Pulsed Laser ◽  
Nickel Thin Films ◽  
Pulsed Laser Irradiation

Phase Variation of Amorphous-Si and Poly-Si Thin Films with Excimer Laser Irradiation

1996 ◽  
Vol 35 (Part 2, No. 11B) ◽  
pp. L1473-L1475 ◽  
Author(s):  
Kuninori Kitahara ◽  
Katsuyuki Suga ◽  
Akito Hara ◽  
Kazuo Nakajima
Keyword(s):  
Thin Films ◽  
Laser Irradiation ◽  
Excimer Laser ◽  
Phase Variation ◽  
Excimer Laser Irradiation ◽  
Amorphous Si

Short pulsed laser irradiation of amorphous germanium thin films

1982 ◽  
Vol 97 (1) ◽  
pp. 1-7 ◽  
Author(s):  
R.K. Sharma ◽  
S.K. Bansal ◽  
R. Nath ◽  
G.P. Srivastava
Keyword(s):  
Thin Films ◽  
Laser Irradiation ◽  
Pulsed Laser ◽  
Amorphous Germanium ◽  
Pulsed Laser Irradiation

scholarly journals Structural and Electrical Studies on ZnO-Based Thin Films by Laser Irradiation

2016 ◽  
Vol 2016 ◽  
pp. 1-6 ◽  
Author(s):  
Shanyue Zhao ◽  
Yinqun Hua ◽  
Ruifang Chen ◽  
Jian Zhang ◽  
Ping Ji
Keyword(s):  
Thin Films ◽  
Grain Size ◽  
Electrical Properties ◽  
Grain Boundaries ◽  
Laser Irradiation ◽  
Nonlinear Coefficient ◽  
Acceptor State ◽  
Xrd Pattern ◽  
Electrical Studies ◽  
Structural And Electrical Properties

The effects of laser irradiation on the structural and electrical properties of ZnO-based thin films were investigated. The XRD pattern shows that the thin films were highly textured along thec-axis and perpendicular to the surface of the substrate. Raman spectra reveal that Bi2O3segregates mainly at ZnO-ZnO grain boundaries. After laser irradiation processing, the grain size of the film was reduced significantly, and the intrinsic atomic defects of grain boundaries and Bi element segregated at the grain boundary were interacted frequently and formed the composite defects of acceptor state. The nonlinear coefficient increased to 24.31 and the breakdown voltage reduced to 5.34 V.

In situ excimer laser irradiation as cleaning tool for solid phase epitaxy of laser crystallized polycrystalline silicon thin films

2013 ◽  
Vol 210 (12) ◽  
pp. 2729-2735 ◽  
Author(s):  
Ingmar Höger ◽  
Thomas Schmidt ◽  
Anja Landgraf ◽  
Martin Schade ◽  
Annett Gawlik ◽  
...  
Keyword(s):  
Thin Films ◽  
Laser Irradiation ◽  
Excimer Laser ◽  
Polycrystalline Silicon ◽  
Solid Phase ◽  
Solid Phase Epitaxy ◽  
Silicon Thin Films ◽  
Excimer Laser Irradiation

Laser Induced Oxidation Effects in Bismuth Thin Films

2012 ◽  
Vol 1477 ◽  
Author(s):  
Marco A. Zepeda ◽  
Michel Picquart ◽  
Emmanuel Haro-Poniatowski
Keyword(s):  
Thin Films ◽  
Raman Spectroscopy ◽  
Laser Irradiation ◽  
Raman Spectra ◽  
Exposure Time ◽  
Oxidation Process ◽  
Energy Dispersion Spectroscopy ◽  
Irradiation Power ◽  
Pure Bismuth ◽  
532 Nm

ABSTRACTThe Laser induced oxidation process of bismuth was investigated using Raman spectroscopy. Upon laser irradiation (λ = 532 nm) pure Bismuth was transformed gradually into Bi2O3. Raman spectra of the samples showed the characteristics peaks for pure Bi located at 71 cm-1 and 96 cm-1. The oxidation process was monitored by Raman spectra with four additional bands located at about 127 cm-1, 241 cm-1, 313 cm-1 and 455 cm-1. Maintaining constant the exposure time of irradiation, the intensity of these bands depended on laser irradiation power. The presence of Bi2O3 in the sample was confirmed through by energy dispersion spectroscopy (EDS).

Pulsed laser deposition of thin films: elimination of particulates by second laser irradiation

2003 ◽  
Author(s):  
Eniko Gyorgy ◽  
Ion N. Mihailescu ◽  
Michael Kompitsas ◽  
A. Giannoudakos
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Laser Irradiation ◽  
Pulsed Laser ◽  
Laser Deposition
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