scholarly journals Bohm-Aharonov and Kondo effects on tunneling currents in a mesoscopic ring

1997 ◽  
Vol 55 (12) ◽  
pp. R7335-R7338 ◽  
Author(s):  
Maria A. Davidovich ◽  
E. V. Anda ◽  
J. R. Iglesias ◽  
G. Chiappe
Keyword(s):  
Kondo Effects ◽  
Mesoscopic Ring ◽  
Tunneling Currents

Kondo effect on tunneling currents in a mesoscopic ring

1998 ◽  
Vol 177-181 ◽  
pp. 313-315
Author(s):  
M.A. Davidovich ◽  
E.V. Anda ◽  
J.R. Iglesias ◽  
G. Chiappe
Keyword(s):  
Kondo Effect ◽  
Mesoscopic Ring ◽  
Tunneling Currents

APPLICATION OF EPITAXIAL UNIPOLAR BARRIERS TO REDUCE NOISE CURRENTS IN PHOTODETECTORS

2011 ◽  
Vol 20 (03) ◽  
pp. 557-564
Author(s):  
G. R. SAVICH ◽  
J. R. PEDRAZZANI ◽  
S. MAIMON ◽  
G. W. WICKS
Keyword(s):  
Leakage Current ◽  
Surface Passivation ◽  
Leakage Currents ◽  
Type Region ◽  
Surface Leakage Current ◽  
Unipolar Barrier ◽  
Trap Assisted Tunneling ◽  
Assisted Tunneling ◽  
Tunneling Currents ◽  
Surface Leakage

Tunneling currents and surface leakage currents are both contributors to the overall dark current which limits many semiconductor devices. Surface leakage current is generally controlled by applying a post-epitaxial passivation layer; however, surface passivation is often expensive and ineffective. Band-to-band and trap assisted tunneling currents cannot be controlled through surface passivants, thus an alternative means of control is necessary. Unipolar barriers, when appropriately applied to standard electronic device structures, can reduce the effects of both surface leakage and tunneling currents more easily and cost effectively than other methods, including surface passivation. Unipolar barriers are applied to the p -type region of a conventional, MBE grown, InAs based pn junction structures resulting in a reduction of surface leakage current. Placing the unipolar barrier in the n -type region of the device, has the added benefit of reducing trap assisted tunneling current as well as surface leakage currents. Conventional, InAs pn junctions are shown to exhibit surface leakage current while unipolar barrier photodiodes show no detectable surface currents.

Measurement of Fowler-Nordheim tunneling currents in MOS structures under charge trapping conditions

1985 ◽  
Vol 28 (7) ◽  
pp. 717-720 ◽  
Author(s):  
Y. Nissan-Cohen ◽  
J. Shappir ◽  
D. Frohman-Bentchkowsky
Keyword(s):  
Charge Trapping ◽  
Tunneling Currents ◽  
Mos Structures ◽  
Nordheim Tunneling

scholarly journals Persistent current of correlated electrons in mesoscopic ring with impurity

2008 ◽  
Vol 40 (5) ◽  
pp. 1507-1509 ◽  
Author(s):  
R. Krčmár ◽  
A. Gendiar ◽  
M. Moško ◽  
R. Németh ◽  
P. Vagner ◽  
...  
Keyword(s):  
Persistent Current ◽  
Correlated Electrons ◽  
Mesoscopic Ring

In-Plane Asymmetries on the Ge(111)-c(2×8) Surface Mapped with the Scanning Tunneling Microscope

1992 ◽  
Vol 295 ◽  
Author(s):  
P. Molinàs-Mata ◽  
J. Zegenhagen ◽  
M. Böhringer ◽  
N. Takeuchi ◽  
A. Selloni
Keyword(s):  
Local Density ◽  
Experimental Studies ◽  
Surface States ◽  
Small Sample ◽  
Constant Current ◽  
Scanning Tunneling ◽  
Tunneling Microscopy ◽  
Low Energy Electron ◽  
Tunneling Currents ◽  
Insight Into

AbstractWe report on new experimental studies of the Ge(111)-c(2×8) reconstruction performed with low-energy electron diffraction. (LEED) and scanning tunneling microscopy (STM). Weak quarter-order reflections are present in the c(2 × 8) LEED pattern in agreement with previous observations and results of ab initio calculations. In order to gain insight into the predicted splitting of dangling bond states, we compare constant current topographs (CCT's) performed at high-tunneling currents (40.nA) with first-principles calculations of the local density of states (LDOS) 1Å above the surface adatoms and obtain good qualitative agreement. We finally discuss to what extent the STM CCT's at high tunneling currents (small sample-tip distances (STD)) are sensitive to surface states outside the Г point.

Quasiparticle Effects on Tunneling Currents: A Study ofC2H4Adsorbed on theSi(001)-(2×1)Surface

2001 ◽  
Vol 86 (10) ◽  
pp. 2110-2113 ◽  
Author(s):  
G.-M. Rignanese ◽  
X. Blase ◽  
S. G. Louie
Keyword(s):  
Tunneling Currents

scholarly journals Tsu-Esaki modeling of tunneling currents in ferroelectric tunnel junctions

2017 ◽  
Vol 122 (23) ◽  
pp. 234301 ◽  
Author(s):  
Noora Tuomisto ◽  
Sebastiaan van Dijken ◽  
Martti Puska
Keyword(s):  
Tunnel Junctions ◽  
Tunneling Currents
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