Schottky-barrier formation at nanoscale metal-oxide interfaces

1997 ◽  
Vol 55 (15) ◽  
pp. 9792-9799 ◽  
Author(s):  
D. L. Carroll ◽  
M. Wagner ◽  
M. Rühle ◽  
D. A. Bonnell
Keyword(s):  
Metal Oxide ◽  
Schottky Barrier ◽  
Oxide Interfaces ◽  
Barrier Formation

scholarly journals Schottky barrier at graphene/metal oxide interfaces: insight from first-principles calculations

2017 ◽  
Vol 7 (1) ◽  
Author(s):  
Kai Cheng ◽  
Nannan Han ◽  
Yan Su ◽  
Junfeng Zhang ◽  
Jijun Zhao
Keyword(s):  
Metal Oxide ◽  
Schottky Barrier ◽  
First Principles ◽  
First Principles Calculations ◽  
Oxide Interfaces

STRUCTURE OF METAL-OXIDE INTERFACES

1985 ◽  
Vol 46 (C4) ◽  
pp. C4-135-C4-140 ◽  
Author(s):  
M. Leseur ◽  
B. Pieraggi
Keyword(s):  
Metal Oxide ◽  
Oxide Interfaces ◽  
Structure Of Metal

METAL-OXIDE INTERFACES OBTAINED BY SELECTIVE CHEMICAL REDUCTION OF LAMELLAR OXIDE-OXIDE EUTECTIC STRUCTURES

1990 ◽  
Vol 51 (C1) ◽  
pp. C1-781-C1-787
Author(s):  
B. BONVALOT ◽  
G. DHALENNE ◽  
F. MILLOT ◽  
A. REVCOLEVSCHI
Keyword(s):  
Metal Oxide ◽  
Chemical Reduction ◽  
Oxide Interfaces ◽  
Selective Chemical

Effect of annealing Sb/InP(110) interfaces and Schottky barrier formation of Ag on annealed Sb/InP(110) surfaces

1991 ◽  
Vol 58 (20) ◽  
pp. 2243-2245 ◽  
Author(s):  
Masao Yamada ◽  
Anita K. Wahi ◽  
Paul L. Meissner ◽  
Alberto Herrera‐Gomez ◽  
Tom Kendelewicz ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Barrier Formation

Influence of Epi-Layer Growth Pits on SiC Device Characteristics

2015 ◽  
Vol 821-823 ◽  
pp. 177-180 ◽  
Author(s):  
Chiaki Kudou ◽  
Hirokuni Asamizu ◽  
Kentaro Tamura ◽  
Johji Nishio ◽  
Keiko Masumoto ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Schottky Barrier ◽  
Leakage Current ◽  
Dielectric Breakdown ◽  
Layer Growth ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Constant Current ◽  
Schottky Barrier Diodes ◽  
Current Time

Homoepitaxial layers with different growth pit density were grown on 4H-SiC Si-face substrates by changing C/Si ratio, and the influence of the growth pit density on Schottky barrier diodes and metal-oxide-semiconductor capacitors were investigated. Even though there were many growth pits on the epi-layer, growth pit density did not affect the leakage current of Schottky barrier diodes and lifetime of constant current time dependent dielectric breakdown. By analyzing the growth pit shape, the aspect ratio of the growth pit was considered to be the key factor to the leakage current of the Schottky barrier diodes and the lifetime of metal-oxide-semiconductor capacitors.

INTERACTIONS AT METAL/OXIDE AND OXIDE/OXIDE INTERFACES STUDIED BY ULTRATHIN FILM GROWTH ON SINGLE-CRYSTAL OXIDE SUBSTRATES

1995 ◽  
Vol 02 (01) ◽  
pp. 109-126 ◽  
Author(s):  
ROBERT J. LAD
Keyword(s):  
Metal Oxide ◽  
Single Crystal ◽  
Film Growth ◽  
Ultrathin Film ◽  
Reaction Products ◽  
Impurity Effects ◽  
Crystal Surfaces ◽  
Oxide Interfaces ◽  
Single Crystal Surfaces ◽  
Oxide Substrates

This article reviews aspects of the electronic, chemical, and structural properties of metal/oxide and oxide/oxide interfaces which are formed via ultrathin film growth on oxide single-crystal surfaces. The interactions at the interfaces are classified based on the nature of the reaction products, thermodynamic predictions of interfacial reactions, and wetting and adhesion. Then, properties of single-crystal oxide substrates and limitations and difficulties in studying these ceramic systems are discussed. The remainder of the article presents experimental observations for several systems involving both metal and oxide ultrathin film growth on stoichiometric NiO (100), TiO 2(110), and [Formula: see text] surfaces including a discussion of interdiffusion, chemical and electronic interactions, thermal stability, and interfacial impurity effects.

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