Inverted order of acceptor and donor levels of the Si-related DX center inAlxGa1−xAs

1997 ◽  
Vol 55 (7) ◽  
pp. 4042-4045 ◽  
Author(s):  
Subhasis Ghosh ◽  
Vikram Kumar
Keyword(s):  
Genetics ◽  
1990 ◽  
Vol 126 (1) ◽  
pp. 167-176
Author(s):  
D Gubb ◽  
M Ashburner ◽  
J Roote ◽  
T Davis

Abstract The zeste mutation of Drosophila melanogaster suppresses the expression of white genes in the eye. This suppression is normally dependent on there being two copies of w+ located close to each other in the genome--they may either be in cis (as in a tandem duplication of w+) or in trans, i.e. on homologous chromosomes. Duplicated w+ genes carried by a giant transposing element, TE146(Z), are suppressed by z whether they are in direct (tandem) or inverted order. The tandem form of the TE is very sensitive to a rearrangement on the homologous chromosome--many rearrangements with breakpoints "opposite" the TE's insertion site prevent the interaction between the white genes on a z background. These aberrations act as dominant suppressors of zeste that are specific to the tandemly duplicated form of TE146(Z). The inverted form of the TE146(Z) presumably pairs as a hairpin loop; this is more stable than the tandem form by the criterion that its zeste phenotype is unaffected by any of the aberrations. This effect of rearrangements has been used as the basis for a screen, gamma-ray induced aberrations with at least one breakpoint opposite the TE site were recovered by their suppression of the zeste phenotype.


1995 ◽  
Vol 196-201 ◽  
pp. 1073-1078 ◽  
Author(s):  
T. Laine ◽  
J. Mäkinen ◽  
Kimmo Saarinen ◽  
Pekka J. Hautojärvi ◽  
C. Corbel ◽  
...  

1989 ◽  
Vol 163 ◽  
Author(s):  
Thomas N. Theis ◽  
Patricia M. Mooney

AbstractWe review three important experimental results which suggest that electron capture and emission by the DX center in AlxGa1-xAs proceeds via an excited intermediate state: the very different dependencies of the thermal capture and emission rates on alloy composition, the exponential dependence of the thermal capture rate on the quasi-equilibrium Fermi energy, and the thermal activation of the hot electron capture rate. None of these results is readily explained by a conventional lattice relaxation model, in which an electron is captured directly from the lowest lying band edge, but each can be simply explained if the dominant channel for multiphonon capture is via a transition state which lies well above the band edge. This picture is consistent with recent pseudopotential calculations which predict that the lattice relaxed state (the DX state) is stabilized by capture of more than one electron, since such a model naturally admits the possibility of an intermediate one-electron state.


1995 ◽  
Vol 74 (10) ◽  
pp. 1889-1889 ◽  
Author(s):  
N. Johnson ◽  
C. Herring ◽  
Chris Van de Walle
Keyword(s):  

2004 ◽  
Vol 95 (3) ◽  
pp. 1171-1179 ◽  
Author(s):  
E. Placzek-Popko ◽  
J. Szatkowski ◽  
P. Becla
Keyword(s):  

1993 ◽  
Vol 73 (5) ◽  
pp. 2572-2574 ◽  
Author(s):  
R. Piotrzkowski ◽  
E. Litwin‐Staszewska ◽  
T. Suski ◽  
L. Kończewicz ◽  
J. L. Robert ◽  
...  
Keyword(s):  

1988 ◽  
Vol 144 ◽  
Author(s):  
T. Maed ◽  
T. Ishikawa ◽  
K. Kondo

ABSTRACTWe studied doping Se into AlGaAs layers using PbSe as a dopant source for molecular beam epitaxy (MBE). Good controllability and abruptness equivalent to that of Si-doping were obtained. Se-doping was successfully applied to HEMT structures with reduced DX center concentrations. The two dimensional electron gas (2DEG) characteristics of these structures were comparable to those of Si-doped structures.


1985 ◽  
Vol 56 ◽  
Author(s):  
J. K. ABROKWAH ◽  
H. HIBBS ◽  
R. R. DANIELS ◽  
P. JOSLYN

AbstractThe use of an AlGaAs/n-GaAs superlattice in place of the n-AlGaAs layer in MODFET devices reduces the light and temperature sensitivity of the threshold voltage. This paper considers the stability of Si doped superlattices under annealing conditions required for activation of the implant in the self-aligned gate MODFET fabrication process. Rapid optical annealing does not significantly degrade the superlattice structure. The DX center concentration in the superlattice structures is a factor of 30 less than measured in conventional MODFET structures. High performance MOOFET devices have been fabricated using the self-aligned gate process with rapid optical annealing.


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