Angle-resolved studies of the spin-flip Raman scattering of holes bound to acceptors in p-type nitrogen-doped zinc selenide

1997 ◽  
Vol 55 (3) ◽  
pp. 1607-1616 ◽  
Author(s):  
Catherine Orange ◽  
Bernhard Schlichtherle ◽  
Daniel Wolverson ◽  
J. John Davies ◽  
Tobias Ruf ◽  
...  
Keyword(s):  
Raman Scattering ◽  
Zinc Selenide ◽  
Nitrogen Doped ◽  
Spin Flip ◽  
P Type

Spin-flip Raman scattering of holes bound to acceptors in p-type nitrogen-doped zinc selenide

1995 ◽  
Vol 96 (7) ◽  
pp. 437-440 ◽  
Author(s):  
Christopher M. Townsley ◽  
Bernhard Schlichtherle ◽  
Daniel Wolverson ◽  
J.John Davies ◽  
Ken-ichi Ogata ◽  
...  
Keyword(s):  
Raman Scattering ◽  
Zinc Selenide ◽  
Nitrogen Doped ◽  
Spin Flip ◽  
P Type

Spin-flip Raman scattering studies of post-growth annealed p-type nitrogen-doped zinc selenide

1997 ◽  
Vol 12 (12) ◽  
pp. 1609-1614 ◽  
Author(s):  
Catherine L Orange ◽  
Daniel Wolverson ◽  
Bernhard Schlichtherle ◽  
J John Davies ◽  
Ken-ichi Ogata ◽  
...  
Keyword(s):  
Raman Scattering ◽  
Zinc Selenide ◽  
Nitrogen Doped ◽  
Spin Flip ◽  
P Type

Spin-flip Raman-scattering studies of compensating donor centers in nitrogen-doped zinc selenide grown by molecular-beam epitaxy

1996 ◽  
Vol 53 (16) ◽  
pp. 10983-10987 ◽  
Author(s):  
C. M. Townsley ◽  
J. J. Davies ◽  
D. Wolverson ◽  
P. J. Boyce ◽  
G. Horsburgh ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Raman Scattering ◽  
Zinc Selenide ◽  
Molecular Beam ◽  
Nitrogen Doped ◽  
Spin Flip

Raman Scattering from Acceptor and Donor States in Nitrogen-Doped P-Type Zinc Selenide

1995 ◽  
Vol 182-184 ◽  
pp. 251-254
Author(s):  
P.J. Boyce ◽  
J.J. Davies ◽  
D. Wolverson ◽  
Kousaku Ohkawa ◽  
T. Mitsuyu
Keyword(s):  
Raman Scattering ◽  
Zinc Selenide ◽  
Nitrogen Doped ◽  
Donor States ◽  
P Type

Spin‐flip Raman scattering from shallow and deep donor centers in nitrogen‐dopedp‐type zinc selenide

1994 ◽  
Vol 65 (16) ◽  
pp. 2063-2065 ◽  
Author(s):  
P. J. Boyce ◽  
J. J. Davies ◽  
D. Wolverson ◽  
K. Ohkawa ◽  
T. Mitsuyu
Keyword(s):  
Raman Scattering ◽  
Zinc Selenide ◽  
Spin Flip ◽  
Deep Donor

Spin-flip Raman scattering studies of doped epitaxial zinc selenide

1996 ◽  
Vol 159 (1-4) ◽  
pp. 229-237 ◽  
Author(s):  
D. Wolverson ◽  
P.J. Boyce ◽  
C.M. Townsley ◽  
B. Schlichtherle ◽  
J.J. Davies
Keyword(s):  
Raman Scattering ◽  
Zinc Selenide ◽  
Spin Flip

scholarly journals Transparent All-Oxide Hybrid NiO:N/TiO2 Heterostructure for Optoelectronic Applications

Electronics ◽  
2021 ◽  
Vol 10 (9) ◽  
pp. 988
Author(s):  
Chrysa Aivalioti ◽  
Alexandros Papadakis ◽  
Emmanouil Manidakis ◽  
Maria Kayambaki ◽  
Maria Androulidaki ◽  
...  
Keyword(s):  
Band Gap ◽  
Single Phase ◽  
Structural Disorder ◽  
Energy Band Gap ◽  
Nitrogen Doped ◽  
Nio Thin Film ◽  
Direct Band ◽  
Output Characteristics ◽  
Indirect Band Gap ◽  
P Type

Nickel oxide (NiO) is a p-type oxide and nitrogen is one of the dopants used for modifying its properties. Until now, nitrogen-doped NiO has shown inferior optical and electrical properties than those of pure NiO. In this work, we present nitrogen-doped NiO (NiO:N) thin films with enhanced properties compared to those of the undoped NiO thin film. The NiO:N films were grown at room temperature by sputtering using a plasma containing 50% Ar and 50% (O2 + N2) gases. The undoped NiO film was oxygen-rich, single-phase cubic NiO, having a transmittance of less than 20%. Upon doping with nitrogen, the films became more transparent (around 65%), had a wide direct band gap (up to 3.67 eV) and showed clear evidence of indirect band gap, 2.50–2.72 eV, depending on %(O2-N2) in plasma. The changes in the properties of the films such as structural disorder, energy band gap, Urbach states and resistivity were correlated with the incorporation of nitrogen in their structure. The optimum NiO:N film was used to form a diode with spin-coated, mesoporous on top of a compact, TiO2 film. The hybrid NiO:N/TiO2 heterojunction was transparent showing good output characteristics, as deduced using both I-V and Cheung’s methods, which were further improved upon thermal treatment. Transparent NiO:N films can be realized for all-oxide flexible optoelectronic devices.

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