Noncollinear interlayer exchange coupling caused by interface spin-orbit interaction

1997 ◽  
Vol 55 (18) ◽  
pp. 12561-12565 ◽  
Author(s):  
Ke Xia ◽  
Weiyi Zhang ◽  
Mu Lu ◽  
Hongru Zhai
Keyword(s):  
Exchange Coupling ◽  
Orbit Interaction ◽  
Spin Orbit ◽  
Interlayer Exchange Coupling ◽  
Spin Orbit Interaction ◽  
Interlayer Exchange

Spin–orbit torque switching without an external field using interlayer exchange coupling

2016 ◽  
Vol 11 (9) ◽  
pp. 758-762 ◽  
Author(s):  
Yong-Chang Lau ◽  
Davide Betto ◽  
Karsten Rode ◽  
J. M. D. Coey ◽  
Plamen Stamenov
Keyword(s):  
External Field ◽  
Exchange Coupling ◽  
Spin Orbit ◽  
Interlayer Exchange Coupling ◽  
Interlayer Exchange

Field-free spin–orbit torque induced magnetization reversal in a composite free layer with interlayer exchange coupling

2021 ◽  
Vol 118 (13) ◽  
pp. 132402
Author(s):  
Zhou Li ◽  
Yinuo Shi ◽  
Kequn Chi ◽  
Wenbiao Zhang ◽  
Xiang Feng ◽  
...  
Keyword(s):  
Magnetization Reversal ◽  
Exchange Coupling ◽  
Spin Orbit ◽  
Interlayer Exchange Coupling ◽  
Free Layer ◽  
Interlayer Exchange

Field-free spin–orbit torque switching induced by interlayer exchange coupling in Pt/Co/Ru/Ni/Pt multilayer

2021 ◽  
Vol 130 (24) ◽  
pp. 243901
Author(s):  
Zhiming Dai ◽  
Wei Liu ◽  
Xiaotian Zhao ◽  
Long Liu ◽  
Yuhang Song ◽  
...  
Keyword(s):  
Exchange Coupling ◽  
Spin Orbit ◽  
Interlayer Exchange Coupling ◽  
Interlayer Exchange

Spin generation and manipulation based on spin-orbit interaction in semiconductors

2017 ◽  
Author(s):  
J. Nitta
Keyword(s):  
Magnetic Field ◽  
Orbit Interaction ◽  
Degree Of Freedom ◽  
Effective Magnetic Field ◽  
Spin Orbit ◽  
Spin Orbit Interaction ◽  
Spin Degree ◽  
Dimensional Electron Gas ◽  
Spin Orbit Interactions ◽  
Electrical Generation

This chapter focuses on the electron spin degree of freedom in semiconductor spintronics. In particular, the electrostatic control of the spin degree of freedom is an advantageous technology over metal-based spintronics. Spin–orbit interaction (SOI), which gives rise to an effective magnetic field. The essence of SOI is that the moving electrons in an electric field feel an effective magnetic field even without any external magnetic field. Rashba spin–orbit interaction is important since the strength is controlled by the gate voltage on top of the semiconductor’s two-dimensional electron gas. By utilizing the effective magnetic field induced by the SOI, spin generation and manipulation are possible by electrostatic ways. The origin of spin-orbit interactions in semiconductors and the electrical generation and manipulation of spins by electrical means are discussed. Long spin coherence is achieved by special spin helix state where both strengths of Rashba and Dresselhaus SOI are equal.

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