All-electron full-potential calculation of the electronic band structure, elastic constants, and equation of state for graphite

1997 ◽  
Vol 55 (17) ◽  
pp. 11202-11211 ◽  
Author(s):  
J. C. Boettger
Keyword(s):  
Equation Of State ◽  
Band Structure ◽  
Elastic Constants ◽  
Electronic Band Structure ◽  
Full Potential ◽  
Electronic Band

Structural, electronic and elastic properties of the B2-ScM (M =Au, Hg and Tl) intermetallic compounds: Ab initio calculations

2015 ◽  
Vol 04 (04) ◽  
pp. 1550020
Author(s):  
Ahmad A. Mousa ◽  
Jamil M. Khalifeh
Keyword(s):  
Mechanical Properties ◽  
Bulk Modulus ◽  
Intermetallic Compounds ◽  
Elastic Constants ◽  
Density Functional ◽  
Electronic Band Structure ◽  
Local Density ◽  
Full Potential ◽  
Generalized Gradient ◽  
Electronic Band

Structural, electronic, elastic and mechanical properties of ScM (M[Formula: see text][Formula: see text][Formula: see text]Au, Hg and Tl) intermetallic compounds are studied using the full potential-linearized augmented plane wave (FP-LAPW) method based on the density functional theory (DFT), within the generalized gradient approximation (GGA) and the local density approximation (LDA) to the exchange-correlation approximation energy as implemented in the Wien2k code. The ground state properties including lattice parameters, bulk modulus and elastic constants were all computed and compared with the available previous theoretical and experimental results. The lattice constant was found to increase in contrast to the bulk modulus which was found to decrease with every substitution of the cation (M) starting from Au till Tl in ScM. Both the electronic band structure and density-of-states (DOS) calculations show that these compounds possess metallic properties. The calculated elastic constants ([Formula: see text], [Formula: see text] and [Formula: see text] confirmed the elastic stability of the ScM compounds in the B2-phase. The mechanical properties and ductile behaviors of these compounds are also predicted based on the calculated elastic constants.

scholarly journals Emergence of Superconductivity in LaOFeAs: Electronic Structure and Lattice Dynamics

2010 ◽  
Vol 3 (1) ◽  
pp. 1 ◽  
Author(s):  
M. Aftabuzzaman ◽  
A.K.M. A. Islam ◽  
S. H. Naqib
Keyword(s):  
Band Structure ◽  
Density Of States ◽  
Elastic Constants ◽  
Phonon Dispersion ◽  
Electronic Band Structure ◽  
Parent Compound ◽  
Electronic Density ◽  
Electronic Band ◽  
High Tc ◽  
Carrier Doping

In view of continuing interest in the parent compound of the recently discovered superconducting iron-oxypnictide (LaO1-xFxFeAs) we present fresh results and analyses of ab-initio calculations of the electronic band structure, lattice dynamical properties, and elastic constants assuming it to be insulating as well as metallic. The total and partial electronic density of states (EDOS) of the undoped LaOFeAs in both states are extracted from the electronic band structure. The phonon dispersion and the phonon density of states (PDOS) are also studied. Possible implications of the band structure, EDOS, and PDOS of LaOFeAs on the eventual appearance of high-Tc superconductivity upon carrier doping are discussed. Our findings reveal that phonons are unlikely to mediate Cooper pairing in RE-OFeAs. In addition, the values of various independent elastic constants of the compound assuming both insulating and metallic states are estimated and discussed. Keywords: LaOFeAs; Electronic band structure; Phonon spectrum; Elastic constants; Superconductor.© 2011 JSR Publications. ISSN: 2070-0237 (Print); 2070-0245 (Online). All rights reserved.doi:10.3329/jsr.v3i1.6211                J. Sci. Res. 3 (1), 1-11 (2011)

Ab initio study of structural, mechanical, thermal and electronic properties of perovskites Sr(Li,Pd)H3

2016 ◽  
Vol 30 (04) ◽  
pp. 1650003 ◽  
Author(s):  
S. Benlamari ◽  
S. Amara Korba ◽  
S. Lakel ◽  
H. Meradji ◽  
S. Ghemid ◽  
...  
Keyword(s):  
Bulk Modulus ◽  
Electronic Properties ◽  
Elastic Constants ◽  
Density Functional ◽  
Electronic Band Structure ◽  
Local Density ◽  
Velocity Variation ◽  
Full Potential ◽  
Generalized Gradient ◽  
Electronic Band

The structural, elastic, thermal and electronic properties of perovskite hydrides SrLiH3 and SrPdH3 have been investigated using the all-electron full-potential linear augmented plane wave (FP-LAPW) method based on the density functional theory (DFT). For the exchange-correlation potential, local-density approximation (LDA) and generalized gradient approximation (GGA) have been used to calculate theoretical lattice parameters, bulk modulus, and its pressure derivative. The present results are in good agreement with available theoretical and experimental data. The three independent elastic constants [Formula: see text], [Formula: see text] and [Formula: see text] are also reported. From electronic band structure and density of states (DOSs), it is found that SrLiH3 is an insulator characterized by an indirect gap of 3.48 eV, while SrPdH3 is metallic with a calculated DOSs at Fermi energy of 0.745 states/eV-unit cell. Poisson’s ratio [Formula: see text], Young’s modulus (E), shear modulus (G), anisotropy factor (A), average sound velocities [Formula: see text] and density [Formula: see text] of these compounds are also estimated for the first time. The Debye temperature is deduced from the average sound velocity. Variation of elastic constants and bulk modulus of these compounds as a function of pressure is also reported. Pressure and thermal effects on some macroscopic properties are predicted using the quasi-harmonic Debye model.

The Structural, Electronic, Optical and Thermo-Electric Properties of Oxynitride Perovskite CaTaO2N

SPIN ◽  
2020 ◽  
Vol 10 (01) ◽  
pp. 2050007
Author(s):  
K. Hocine ◽  
O. Cheref ◽  
K. Bettine ◽  
D. Rached ◽  
S. Benalia ◽  
...  
Keyword(s):  
Band Structure ◽  
Figure Of Merit ◽  
Density Functional ◽  
Electronic Band Structure ◽  
Structural Parameters ◽  
Electric Properties ◽  
Partial Density ◽  
Full Potential ◽  
Thermo Electric ◽  
Electronic Band

In this study, we carried out ab-initio calculations of structural, electronic, optical and thermo-electric properties of CaTaO2N compound in Pnma orthorhombic structure, using the full-potential linearized augmented plane wave method (FP-LAPW), within the framework of density functional theory (DFT). The calculated structural parameters are found to be in good agreement with the experimental results. Moreover, we have studied the electronic band structure, total and partial density of states in order to explain the origin of band gaps and the nitrogen anion contribution in the valence and the conduction bands. The CaTaO2N band structure has shown a direct band gap in the direction [Formula: see text] (with the value 2.32[Formula: see text]eV). The optical properties represented by the dielectric functions for CaTaO2N compound have revealed that the Pnma structure absorbs the light at a large window in the edge UV-Vis regions. In order to explain the thermo-electric properties, we have calculated Seebeck coefficient, electrical conductivity, thermal conductivity and the factor figure of merit in this temperature range 100–1000 K. The factor figure of mérit (ZT) of CaTaO2N takes a maximum value of 0.775 at [Formula: see text][Formula: see text]K.

ELECTRONIC BAND STRUCTURE, OPTICAL, THERMAL AND BONDING PROPERTIES OF XMg2O4(X = Si, Ge) SPINEL COMPOUNDS

2013 ◽  
Vol 27 (18) ◽  
pp. 1350082 ◽  
Author(s):  
F. SEMARI ◽  
T. OUAHRANI ◽  
H. KHACHAI ◽  
R. KHENATA ◽  
M. RABAH ◽  
...  
Keyword(s):  
Band Structure ◽  
Density Functional ◽  
Electronic Band Structure ◽  
Theoretical Data ◽  
Debye Model ◽  
Ionic Character ◽  
Full Potential ◽  
Electronic Band ◽  
Spinel Compounds ◽  
Bonding Properties

Bonding nature as well as structural, optoelectronic and thermal properties of the cubic X Mg 2 O 4(X = Si , Ge ) spinel compounds have been calculated using a full-potential augmented plane-wave plus local orbitals (FP-APW+lo) method within the density functional theory. The exchange-correlation potential was treated with the PBE-GGA approximation to calculate the total energy. Moreover, the modified Becke–Johnson potential (TB-mBJ) was also applied to improve the electronic band structure calculations. The computed ground-state parameters (a, B, B′ and u) are in excellent agreements with the available theoretical data. Calculations of the electronic band structure and bonding properties show that these compounds have a direct energy band gap (Γ-Γ) with a dominated ionic character and the TB-mBJ approximation yields larger fundamental band gaps compared to those obtained using the PBE-GGA. Optical properties such as the complex dielectric function ε(ω), reflectivity R(ω) and energy loss function L(ω), for incident photon energy up to 40 eV, have been predicted. Through the quasi-harmonic Debye model, in which the phononic effects are considered, the effects of pressure P and temperature T on the thermal expansion coefficient, Debye temperature and heat capacity for the considered compounds are investigated for the first time.

The electronic band structure of silicon

Physica ◽  
1954 ◽  
Vol 3 (7-12) ◽  
pp. 967-970
Author(s):  
D JENKINS
Keyword(s):  
Band Structure ◽  
Electronic Band Structure ◽  
Electronic Band

THE ELECTRONIC BAND STRUCTURE OF V3Ga AND V3Si

1972 ◽  
Vol 33 (C3) ◽  
pp. C3-223-C3-233 ◽  
Author(s):  
I. B. GOLDBERG ◽  
M. WEGER
Keyword(s):  
Band Structure ◽  
Electronic Band Structure ◽  
Electronic Band

Ab initio calculation on the Optical Properties of AA- Stacked two dimensional Graphene, Silicene, Germanene, and Stanene

2018 ◽  
Vol 1 (1) ◽  
pp. 46-50
Author(s):  
Rita John ◽  
Benita Merlin
Keyword(s):  
Optical Properties ◽  
Band Structure ◽  
Density Functional ◽  
Electronic Band Structure ◽  
Complex Refractive Index ◽  
Single Layer ◽  
Generalized Gradient ◽  
Electronic Band ◽  
Wide Range ◽  
Optical Region

In this study, we have analyzed the electronic band structure and optical properties of AA-stacked bilayer graphene and its 2D analogues and compared the results with single layers. The calculations have been done using Density Functional Theory with Generalized Gradient Approximation as exchange correlation potential as in CASTEP. The study on electronic band structure shows the splitting of valence and conduction bands. A band gap of 0.342eV in graphene and an infinitesimally small gap in other 2D materials are generated. Similar to a single layer, AA-stacked bilayer materials also exhibit excellent optical properties throughout the optical region from infrared to ultraviolet. Optical properties are studied along both parallel (||) and perpendicular ( ) polarization directions. The complex dielectric function (ε) and the complex refractive index (N) are calculated. The calculated values of ε and N enable us to analyze optical absorption, reflectivity, conductivity, and the electron loss function. Inferences from the study of optical properties are presented. In general the optical properties are found to be enhanced compared to its corresponding single layer. The further study brings out greater inferences towards their direct application in the optical industry through a wide range of the optical spectrum.

First principles calculation of structural, electronic and optical properties of (001) and (110) growth axis (InN)/(GaN)n superlattices

2021 ◽  
Vol 67 (1 Jan-Feb) ◽  
pp. 7
Author(s):  
B. Bachir Bouiadjra ◽  
N. Mehnane ◽  
N. Oukli
Keyword(s):  
Optical Properties ◽  
Density Functional ◽  
Electronic Band Structure ◽  
Scale Up ◽  
Energy Scale ◽  
First Principles Calculation ◽  
Full Potential ◽  
Electronic Band ◽  
Electronic And Optical Properties ◽  
Growth Axis

Based on the full potential linear muffin-tin orbitals (FPLMTO) calculation within density functional theory, we systematically investigate the electronic and optical properties of (100) and (110)-oriented (InN)/(GaN)n zinc-blende superlattice with one InN monolayer and with different numbers of GaN monolayers. Specifically, the electronic band structure calculations and their related features, like the absorption coefficient and refractive index of these systems are computed over a wide photon energy scale up to 20 eV. The effect of periodicity layer numbers n on the band gaps and the optical activity of (InN)/(GaN)n SLs in the both  growth axis (001) and (110) are examined and compared. Because of prospective optical aspects of (InN)/(GaN)n such as light-emitting applications, this theoretical study can help the experimental measurements.

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