Reply to ``Comment on `Resonantly excited photoluminescence spectra of porous silicon' ''

1997 ◽  
Vol 55 (15) ◽  
pp. 10117-10118 ◽  
Author(s):  
M. Rosenbauer ◽  
M. Stutzmann ◽  
S. Finkbeiner ◽  
J. Weber ◽  
E. Bustarret
Keyword(s):  
Porous Silicon ◽  
Photoluminescence Spectra

Composition and Structure of Spark Eroded Porous Silicon

1992 ◽  
Vol 283 ◽  
Author(s):  
R. E. Hummel ◽  
S.-S. Chang ◽  
M. Ludwig ◽  
A. Morrone
Keyword(s):  
Porous Silicon ◽  
Polycrystalline Silicon ◽  
Amorphous Matrix ◽  
Vibrational Modes ◽  
Photoluminescence Spectra ◽  
X Ray ◽  
Composition And Structure ◽  
Bending Mode ◽  
Spark Erosion ◽  
Silicon Particles

ABSTRACTPorous silicon which has been prepared by a “dry” technique, that is, by spark erosion, yields similar photoluminescence spectra as anodically etched porous silicon which has been prepared in aqueous solutions. Fourier transform infrared spectra reveal that the dominant features in spark eroded silicon are the Si-O-Si stretching mode and the Si-O-Si bending mode. No infrared vibrational modes characteristic for siloxene have been found in spark eroded Si. Results from X-ray and electron diffraction studies suggest that spark eroded Si involves minute polycrystalline silicon particles which are imbedded in an amorphous matrix.

Correlation of Raman and photoluminescence spectra of porous silicon

1992 ◽  
Vol 60 (1) ◽  
pp. 112-114 ◽  
Author(s):  
R. Tsu ◽  
H. Shen ◽  
M. Dutta
Keyword(s):  
Porous Silicon ◽  
Photoluminescence Spectra

Photo-assisted continuous tuning of photoluminescence spectra of porous silicon

1997 ◽  
Vol 297 (1-2) ◽  
pp. 61-63 ◽  
Author(s):  
Hiroyuki Mizuno ◽  
Hideki Koyama ◽  
Nobuyoshi Koshida
Keyword(s):  
Porous Silicon ◽  
Photoluminescence Spectra ◽  
Continuous Tuning

USXES AND OPTICAL PHENOMENA IN Si LOW-DIMENSIONAL STRUCTURES DEPENDENT ON MORPHOLOGY AND SILICON OXIDE COMPOSITION ON Si SURFACE

2002 ◽  
Vol 09 (02) ◽  
pp. 1047-1052 ◽  
Author(s):  
T. V. TORCHYNSKA ◽  
M. MORALES RODRIGUEZ ◽  
G. P. POLUPAN ◽  
L. I. KHOMENKOVA ◽  
N. E. KORSUNSKAYA ◽  
...  
Keyword(s):  
Porous Silicon ◽  
Emission Spectroscopy ◽  
Silicon Oxide ◽  
Radiative Transition ◽  
Photoluminescence Spectra ◽  
Photoluminescence Band ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force ◽  
Low Dimensional

It has been shown that the intensive and broad "red" photoluminescence band in porous silicon is a nonelementary one and could be decomposed on at least three elementary bands. Photoluminescence, ultrasoft X-ray emission spectroscopy, infrared absorption and atomic force microscopy methods were used to study the reasons for both luminescence band appearance in porous silicon photoluminescence spectra, prepared in different technological conditions. The mechanisms of radiative transition for both elementary bands have been discussed as well.

Photoluminescence in Porous Silicon: Evidence for the Quantum Confinement Model

1991 ◽  
Vol 256 ◽  
Author(s):  
David L. Naylor ◽  
Sung B. Lee ◽  
John C. Pincenti ◽  
Brett E. Bouma
Keyword(s):  
Porous Silicon ◽  
Hydrofluoric Acid ◽  
Quantum Wire ◽  
Quantum Confinement ◽  
Electrochemical Etching ◽  
Photoluminescence Spectra ◽  
Peak Wavelength ◽  
Effects Of Temperature ◽  
Good Agreement ◽  
Confinement Model

ABSTRACTPhotoluminescence spectra have been measured in porous silicon following electrochemical etching in dilute hydrofluoric acid (HF). The effects of HF concentration during etching on the efficiency and peak wavelength of photoluminescence have been investigated. The effects of temperature between 25°C and 200°C on PL spectra have been recorded. Photoluminescence lifetimes as a function of wavelength have been studied following ultrashort UV photoexcitation. A number of lifetime components in the decay are observed the longest in good agreement over the wavelength range of 500 to 600 nm with a silicon quantum wire model. At longer wavelengths a departure from lifetimes of the wire model is observed and two hypotheses for the discrepancy are presented.

scholarly journals Study of the Properties of the Porous Silicon Synthesized by Ag Assisted Chemical Etching

2016 ◽  
Vol 71 ◽  
pp. 40-48 ◽  
Author(s):  
Madhavi Karanam ◽  
G. Mohan Rao ◽  
Shaik Habibuddin ◽  
R. Padmasuvarna
Keyword(s):  
Porous Silicon ◽  
Etching Time ◽  
Photoluminescence Spectra ◽  
Hydrophobic Properties ◽  
Water Contact ◽  
Optical Absorbance ◽  
Angle Measurements ◽  
Static Water Contact Angle ◽  
Contact Angle Measurements ◽  
Static Water

Porous Silicon (PSi) is synthesized by Ag assisted electroless etching and characterized by Scanning electron microscopy (SEM). The effect of etching time on the optical reflectivity, optical absorbance of PSi is investigated. Reflectivity measurements showed that 45% reflectivity Si wafers drops from 45% to 10% for 2 hours etching and 6% for 3 hours etching. The decrease in the reflectivity shows that the PSi can be employed as an anti reflecting substrate in optoelectronic devices. The absorbance measurements reveal that the average absorbance of PSi is 0.60 in the wavelength range 300-800 nm after 2 hours etching. From the photoluminescence spectra it was found that PL intensity of PSi is high compared to bare silicon wafer. Static water contact angle measurements were performed to examine the hydrophobic properties of the PSi prepared under different conditions.

Study of changing the intensity of photoluminescence spectra as a humidity sensor for graphene on porous silicon

Optik ◽  
2019 ◽  
Vol 193 ◽  
pp. 163015
Author(s):  
Adi M. Abdul Hussien ◽  
Haitham T. Hussein ◽  
Uday M. Nayef ◽  
Mohammad H. Mahdi
Keyword(s):  
Porous Silicon ◽  
Humidity Sensor ◽  
Photoluminescence Spectra
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