scholarly journals Role of anisotropic impurity scattering in anisotropic superconductors

1996 ◽  
Vol 54 (21) ◽  
pp. 15463-15467 ◽  
Author(s):  
Grzegorz Harań ◽  
A. D. S. Nagi
Keyword(s):  
Impurity Scattering ◽  
Anisotropic Superconductors

The Role of Impurity Scattering in the Quantum Waveguide

1993 ◽  
Vol 175 (2) ◽  
pp. 339-348
Author(s):  
J. M. Mao ◽  
Y. Huang ◽  
J. M. Zhou
Keyword(s):  
Impurity Scattering ◽  
Quantum Waveguide

The role of impurity scattering in Co/Cu (111) M.B.E. multilayers (abstract)

1996 ◽  
Vol 79 (8) ◽  
pp. 5816
Author(s):  
K. P. Wellock ◽  
B. J. Hickey
Keyword(s):  
Impurity Scattering

scholarly journals The Role of Ionized Impurity Scattering on the Thermoelectric Performances of Rock Salt AgPbmSnSe2+m

2016 ◽  
Vol 26 (28) ◽  
pp. 5149-5157 ◽  
Author(s):  
Lin Pan ◽  
Sunanda Mitra ◽  
Li-Dong Zhao ◽  
Yawei Shen ◽  
Yifeng Wang ◽  
...  
Keyword(s):  
Rock Salt ◽  
Impurity Scattering ◽  
Ionized Impurity Scattering

The role of impurity scattering in the quantum waveguide

1993 ◽  
Vol 73 (4) ◽  
pp. 1853-1857 ◽  
Author(s):  
J. M. Mao ◽  
Y. Huang ◽  
J. M. Zhou
Keyword(s):  
Impurity Scattering ◽  
Quantum Waveguide

The role of spin‐dependent impurity scattering in Fe/Cr giant magnetoresistance multilayers

1991 ◽  
Vol 69 (8) ◽  
pp. 4792-4794 ◽  
Author(s):  
Peter Baumgart ◽  
Bruce A. Gurney ◽  
Dennis R. Wilhoit ◽  
Thao Nguyen ◽  
Bernard Dieny ◽  
...  
Keyword(s):  
Giant Magnetoresistance ◽  
Impurity Scattering

Low Temperature Deposited Highly-Conductive N-type SiC Thin Films

1997 ◽  
Vol 472 ◽  
Author(s):  
Kuan-Lun Cheng ◽  
Huang-Chung Cheng ◽  
Wen-Horng Lee ◽  
Chiapyng Lee ◽  
Tri-Rung Yew
Keyword(s):  
Low Temperature ◽  
Film Growth ◽  
Thin Film Transistor ◽  
Impurity Scattering ◽  
Gas Analyzer ◽  
Flow Rates ◽  
Sic Film ◽  
Dopant Source ◽  
Sic Films

ABSTRACTLow-temperature deposited highly-conductive SiC films has long been a goal for many researchers involved in hetero-junction bipolar transistor, thin-film transistor, solar cell.… etc. Here in this paper, we study the influences of the diluted PH3 flow rates on SiC film quality as well as electrical properties. PH+ was determined from residual gas analyzer to be the main dopant source. Phosphorous atoms will play a role of enhancing the SiC grain growth and resulting in a smaller film growth rate. Carrier concentrations increase monotonically with the diluted PH3 flow rates. While Hall mobility first increases than decreases with it due to a combination effect of the impurity scattering and a film quality improvement which dominates when the 1% PH3/H2 flow rate is above or below 40 seem, respectively.

Low-field Hall coefficient of Al-4d dilute alloys: The role of the anisotropic impurity scattering

1998 ◽  
Vol 106 (7) ◽  
pp. 405-408
Author(s):  
Ph. Mavropoulos ◽  
N. Papanikolaou ◽  
N. Stefanou ◽  
G. Apostolopoulos ◽  
N. Boukos ◽  
...  
Keyword(s):  
Hall Coefficient ◽  
Impurity Scattering ◽  
Dilute Alloys ◽  
Low Field

scholarly journals Reaction method control of impurity scattering in C-doped MgB2: proving the role of defects besides C substitution level

2013 ◽  
Vol 26 (12) ◽  
pp. 125018 ◽  
Author(s):  
S K Chen ◽  
K Y Tan ◽  
A S Halim ◽  
X Xu ◽  
K S B De Silva ◽  
...  
Keyword(s):  
Impurity Scattering ◽  
Reaction Method ◽  
Substitution Level ◽  
Doped Mgb2
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