Scattering-matrix method for the tight-binding model of heterostructure electronic states

1996 ◽  
Vol 53 (15) ◽  
pp. 9993-9999 ◽  
Author(s):  
H. Taniyama ◽  
A. Yoshii
2003 ◽  
Vol 72 (10) ◽  
pp. 2656-2664 ◽  
Author(s):  
Tomoaki Yoshioka ◽  
Hidekatsu Suzuura ◽  
Tsuneya Ando

2003 ◽  
Vol 02 (01n02) ◽  
pp. 37-48 ◽  
Author(s):  
Wei Cheng ◽  
Shang-Fen Ren

Electronic States of Si and Ge QDs of 5 to 3127 atoms with saturated shapes in a size range of 0.57 to 4.92 nm for Si and 0.60 to 5.13 nm for Ge are calculated by using an empirical tight-binding model combined with the irreducible representations of the group theory. The results are compared with those of Si and Ge quantum dots with spherical shape. The effects of the shapes on electronic states in QDs are discussed.


1994 ◽  
Vol 08 (21n22) ◽  
pp. 1387-1391 ◽  
Author(s):  
DANIEL C. MATTIS

We discuss a limiting procedure for solving for the electronic states in the standard tight-binding model of electrons in a CuO 2 plane, in which all contributions O (t2/U) are retained while all higher order terms are rejected. This limiting process yields the exact results in strong coupling, and uncovers a variety of quasiparticles: fermions with and without dispersion, localized spin-1 triplets, their interactions, but no superconductivity. In this paper we fill in some minor details and give a lower bound to the ground state energy valid at all ratios of t/U. We discuss the dynamic process by which two triplets can annihilate, and show that their lifetime is inversely proportional to their energy.


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