Lattice distortions and electronic structure in the negative silicon vacancy

1996 ◽  
Vol 53 (11) ◽  
pp. 7205-7216 ◽  
Author(s):  
Frederick G. Anderson ◽  
Frank S. Ham ◽  
Gunter Grossmann
1999 ◽  
Vol 13 (21) ◽  
pp. 723-733 ◽  
Author(s):  
SUBHRADIP GHOSH ◽  
NITYANANDA DAS ◽  
ABHIJIT MOOKERJEE

We had earlier presented a computationally feasible and fast technique for obtaining the electronic structure of random alloys which allowed us to incorporate short-ranged order and effects like clustering and local lattice distortions due to size mismatch effects. The technique combined the augmented space recursion with the tight-binding LMTO. We have recast the formalism in a way that allows us to sample many more configurations states and bring the basic equations in a one-to-one correspondence with the screed KKR formalism.


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E. Nako ◽  
N. B. Manson ◽  
U. F. S. D'Haenens-Johansson ◽  
...  

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Pratibha Dev ◽  
Sophia E. Economou

2014 ◽  
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Lachlan J. Rogers ◽  
Kay D. Jahnke ◽  
Marcus W. Doherty ◽  
Andreas Dietrich ◽  
Liam P. McGuinness ◽  
...  

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Vol 112 (3) ◽  
Author(s):  
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Tina Müller ◽  
Victor Waselowski ◽  
Jonas N. Becker ◽  
Benjamin Pingault ◽  
...  

2018 ◽  
Vol 30 (32) ◽  
pp. 325601 ◽  
Author(s):  
E Kamil ◽  
J Berges ◽  
G Schönhoff ◽  
M Rösner ◽  
M Schüler ◽  
...  

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