Resonant Raman scattering in GaAs/AlAs superlattices: The role of electron state mixing

1996 ◽  
Vol 53 (7) ◽  
pp. 3960-3965 ◽  
Author(s):  
A. Mlayah ◽  
R. Carles ◽  
A. Sayari ◽  
R. Chtourou ◽  
F. F. Charfi ◽  
...  
1997 ◽  
Vol 79 (9) ◽  
pp. 1762-1765 ◽  
Author(s):  
M. Ozaki ◽  
E. Ehrenfreund ◽  
R. E. Benner ◽  
T. J. Barton ◽  
K. Yoshino ◽  
...  

2000 ◽  
Vol 87-89 ◽  
pp. 226-228 ◽  
Author(s):  
Nobuyuki Yamamoto ◽  
Masami Susaki ◽  
Kazuki Wakita

2016 ◽  
Vol 18 (11) ◽  
pp. 7632-7640 ◽  
Author(s):  
M. Dimitrievska ◽  
H. Xie ◽  
A. J. Jackson ◽  
X. Fontané ◽  
M. Espíndola-Rodríguez ◽  
...  

A combined theoretical and experimental study of the enhancement in the Raman mode intensities of ZnSSe compounds, under various resonant conditions, is presented, leading to more detailed insights into the role of chalcogen electronic states in the photon–matter interaction.


1987 ◽  
Vol 48 (C5) ◽  
pp. C5-345-C5-348
Author(s):  
S.-K. CHANG ◽  
H. NAKATA ◽  
A. V. NURMIKKO ◽  
L. A. KOLODZIEJSKI ◽  
R. L. GUNSHOR

2001 ◽  
Vol 47 (1-2) ◽  
pp. 50-54 ◽  
Author(s):  
Yan Wang ◽  
Ruifeng Yue ◽  
Hexiang Han ◽  
Xianbo Liao ◽  
Yongqian Wang ◽  
...  

1975 ◽  
Vol 70 (1) ◽  
pp. 173-180 ◽  
Author(s):  
C. Razzetti ◽  
M. P. Fontana

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