Splitting of electronic levels with positive and negative angular momenta inIn0.53Ga0.47As/InP quantum dots by a magnetic field

1996 ◽  
Vol 53 (23) ◽  
pp. 15810-15814 ◽  
Author(s):  
M. Bayer ◽  
O. Schilling ◽  
A. Forchel ◽  
T. L. Reinecke ◽  
P. A. Knipp ◽  
...  
2002 ◽  
Vol 66 (23) ◽  
Author(s):  
I. A. Yugova ◽  
I. Ya. Gerlovin ◽  
V. G. Davydov ◽  
I. V. Ignatiev ◽  
I. E. Kozin ◽  
...  

2000 ◽  
Vol 17 (10) ◽  
pp. 752-754
Author(s):  
Ruan Wen-Ying ◽  
Oi Quan ◽  
Chen Guo-Sen ◽  
He Hao-Pei ◽  
Pan Yu-Bin

2007 ◽  
Vol 06 (03n04) ◽  
pp. 257-260
Author(s):  
I. YA. GERLOVIN ◽  
I. V. IGNATIEV ◽  
S. YU. VERBIN ◽  
B. PAL ◽  
Y. MASUMOTO

Effect of external magnetic field on the optical orientation of electron spins in negatively charged InP quantum dots is studied experimentally using the PL pump–probe method.


2006 ◽  
Vol 518 ◽  
pp. 51-56
Author(s):  
Dj. Veljković ◽  
M. Tadić ◽  
F.M. Peeters

Exciton states in type-II InP/InGaP and GaSb/GaAs self-assembled quantum dots and quantum-dot superlattices subject to a normal magnetic field are calculated. Strain is explicitly taken into account in single particle models of the electronic structure, while an exact diagonalization approach is adopted to compute the exciton states. Strain reverts type II band alignment in InP quantum dots to type I, therefore no transitions between the lowest energy states of different angular momenta are observed. On the other hand, strain increases the barrier for the electron in the conduction band of GaSb/GaAs quantum dots, therefore the exciton, being composed of electron and hole states of various angular momenta, may have a finite angular momentum in the ground state. Consequently, the oscillator strength in the InP single quantum dot and quantum-dot superlattice increases with the magnetic field, while the angular momentum transitions between the bright and the dark exciton states in the GaSb system bring about decay of the oscillator strength when the magnetic field exceeds a certain value.


Author(s):  
Cong Shen ◽  
Yan Qing Zhu ◽  
Zixiao Li ◽  
Jingling Li ◽  
Hong Tao ◽  
...  

InP quantum dots (QDs) are considered as the most promising alternative to Cd-based QDs with the lower toxicity and emission spectrum tunability ranging from visible to near-infrared region. Although high-quality...


ACS Nano ◽  
2009 ◽  
Vol 3 (3) ◽  
pp. 502-510 ◽  
Author(s):  
Ken-Tye Yong ◽  
Hong Ding ◽  
Indrajit Roy ◽  
Wing-Cheung Law ◽  
Earl J. Bergey ◽  
...  

1990 ◽  
Vol 216 ◽  
Author(s):  
Kamakhya P. Ghatak ◽  
S. N. Biswas

ABSTRACTIn this paper we studied the thermoelectric power under classically large magnetic field (TPM) in quantum wells (QWs), quantum well wires (QWWS) and quantum dots (QDs) of Bi by formulating the respective electron dispersion laws. The TPM increases with increasing film thickness in an oscillatory manner in all the cases. The TPM in QD is greatest and the least for quantum wells respectively. The theoretical results are in agreement with the experimental observations as reported elsewhere.


2007 ◽  
Vol 06 (03n04) ◽  
pp. 215-219
Author(s):  
E. P. DOMASHEVSKAYA ◽  
V. A. TEREKHOV ◽  
V. M. KASHKAROV ◽  
S. YU. TURISHCHEV ◽  
S. L. MOLODTSOV ◽  
...  

Ultrasoft X-ray emission spectra (USXES) and X-ray absorption near-edge structure (XANES) spectra with the use of synchrotron radiation in the range of P L2,3-edges were obtained for the first time for nanostructures with InP quantum dots grown on GaAs 〈100〉 substrates by vapor-phase epitaxy from metal–organic compounds. These spectra represent local partial density of states in the valence and conduction bands. The additional XANES peak is detected; its intensity depends on the number of monolayers forming quantum dots. Assumptions are made on the band-to-band origin of luminescence spectra in the studied nanostructures.


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