scholarly journals Integer quantum Hall effect for hard-core bosons and a failure of bosonic Chern-Simons mean-field theories for electrons at a half-filled Landau level

1996 ◽  
Vol 53 (3) ◽  
pp. 1517-1521
Author(s):  
O. Heinonen ◽  
M. D. Johnson
Keyword(s):  
Hall Effect ◽  
Quantum Hall Effect ◽  
Quantum Hall ◽  
Mean Field ◽  
Hard Core ◽  
Field Theories ◽  
Integer Quantum Hall Effect ◽  
Integer Quantum ◽  
Chern Simons ◽  
Mean Field Theories

scholarly journals Modulated phases of graphene quantum Hall polariton fluids

2019 ◽  
Vol 52 (382) ◽  
pp. MISC4-MISC5
Author(s):  
F. M. D. Pellegrino
Keyword(s):  
Hall Effect ◽  
Quantum Hall Effect ◽  
Quantum Hall ◽  
Mean Field ◽  
Electron Interaction ◽  
Strong Light ◽  
Matter Coupling ◽  
Integer Quantum Hall Effect ◽  
Integer Quantum ◽  
The Impact

This work is placed in the context of solid-state systems in the regime of ultra-strong light-matter coupling. To date, the highest light-matter coupling strengths have been measured in experiments with polaritons in semiconductor systems under the conditions of the Integer Quantum Hall effect. Polaritons are excitations resulting from strong coupling of light with a dipole-carrying matter excitation. In Pellegrino et al. (2016), we studied the impact of electron-electron interaction on polaritons in cavities in the case of graphene under the conditions of the Integer Quantum Hall effect. By using a mean-field (Hartree-Fock) approach we have shown the possibility of formation of spatially modulated light-matter phases characterized by a wavelength that is dependent on the value of the applied static magnetic field and the concentration of carriers, which is tunable by varying the gate voltage.

scholarly journals An all-epitaxial nitride heterostructure with concurrent quantum Hall effect and superconductivity

2021 ◽  
Vol 7 (8) ◽  
pp. eabf1388
Author(s):  
Phillip Dang ◽  
Guru Khalsa ◽  
Celesta S. Chang ◽  
D. Scott Katzer ◽  
Neeraj Nepal ◽  
...  
Keyword(s):  
Hall Effect ◽  
Quantum Hall Effect ◽  
Electron Gas ◽  
Quantum Hall ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
2D Electron Gas ◽  
Integer Quantum Hall Effect ◽  
Topological Quantum ◽  
Integer Quantum

Creating seamless heterostructures that exhibit the quantum Hall effect and superconductivity is highly desirable for future electronics based on topological quantum computing. However, the two topologically robust electronic phases are typically incompatible owing to conflicting magnetic field requirements. Combined advances in the epitaxial growth of a nitride superconductor with a high critical temperature and a subsequent nitride semiconductor heterostructure of metal polarity enable the observation of clean integer quantum Hall effect in the polarization-induced two-dimensional (2D) electron gas of the high-electron mobility transistor. Through individual magnetotransport measurements of the spatially separated GaN 2D electron gas and superconducting NbN layers, we find a small window of magnetic fields and temperatures in which the epitaxial layers retain their respective quantum Hall and superconducting properties. Its analysis indicates that in epitaxial nitride superconductor/semiconductor heterostructures, this window can be significantly expanded, creating an industrially viable platform for robust quantum devices that exploit topologically protected transport.

Publisher’s Note: Charge Fractionalization in the Integer Quantum Hall Effect [Phys. Rev. Lett. 112, 166801 (2014)]

2014 ◽  
Vol 112 (18) ◽  
Author(s):  
Hiroyuki Inoue ◽  
Anna Grivnin ◽  
Nissim Ofek ◽  
Izhar Neder ◽  
Moty Heiblum ◽  
...  
Keyword(s):  
Hall Effect ◽  
Quantum Hall Effect ◽  
Quantum Hall ◽  
Integer Quantum Hall Effect ◽  
Integer Quantum ◽  
Charge Fractionalization
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