scholarly journals Ab initiomolecular-dynamics study of electronic and optical properties of silicon quantum wires: Orientational effects

1996 ◽  
Vol 53 (3) ◽  
pp. 1446-1451 ◽  
Author(s):  
A. M. Saitta ◽  
F. Buda ◽  
G. Fiumara ◽  
P. V. Giaquinta
Keyword(s):  
Optical Properties ◽  
Quantum Wires ◽  
Electronic And Optical Properties ◽  
Silicon Quantum Wires

Theory of Electronic, Optical and Transport Properties in Silicon Quantum Wires

1992 ◽  
Vol 283 ◽  
Author(s):  
G. D. Sanders ◽  
C. J. Stanton ◽  
Y. C. Chang
Keyword(s):  
Optical Properties ◽  
Transport Properties ◽  
Carrier Transport ◽  
Phonon Scattering ◽  
Quantum Wires ◽  
Recent Observation ◽  
Tight Binding ◽  
Boltzmann Transport ◽  
Electronic And Optical Properties ◽  
Silicon Quantum Wires

ABSTRACTRecent observation of efficient luminescence in porous silicon has stimulated interest in the electronic and optical properties of Si quantum wires [1,2,3]. If silicon becomes a material suitable for optical applications, techniques for fabricating silicon wires reliably and uniformly will be needed. Once this is achieved, there will be interest not only in optical properties of silicon wires but also transport properties. For instance, to determine the properties of a hypothetical Si LED, one needs to know about both transport and optical properties.In this paper, we present theoretical studies of electronic, optical and transpon properties of silicon quantum wires ranging in size from 7.7Ä to 31Ä. The electronic and optical properties are treated in an empirical tight-binding approach with excitonic effects included in the effective mass approximation. Carrier transport is treated in a Boltzmann transport framework with nonpolar deformation potential acoustic phonon scattering being the dominant scattering mechanism.

Optical properties of isolated and interacting silicon quantum wires

1997 ◽  
Vol 297 (1-2) ◽  
pp. 154-162 ◽  
Author(s):  
Stefano Ossicini ◽  
C.M Bertoni ◽  
M Biagini ◽  
A Lugli ◽  
G Roma ◽  
...  
Keyword(s):  
Optical Properties ◽  
Quantum Wires ◽  
Silicon Quantum Wires

Erratum: Orientation effects in the electronic and optical properties of germanium quantum wires [Phys. Rev. B70, 035317 (2004)]

2004 ◽  
Vol 70 (24) ◽  
Author(s):  
Alexandre N. Kholod ◽  
V. L. Shaposhnikov ◽  
N. Sobolev ◽  
V. E. Borisenko ◽  
F. Arnaud D’Avitaya ◽  
...  
Keyword(s):  
Optical Properties ◽  
Quantum Wires ◽  
Electronic And Optical Properties ◽  
Orientation Effects

Optical properties of free‐standing silicon quantum wires

1992 ◽  
Vol 60 (20) ◽  
pp. 2525-2527 ◽  
Author(s):  
G. D. Sanders ◽  
Yia‐Chung Chang
Keyword(s):  
Optical Properties ◽  
Quantum Wires ◽  
Free Standing ◽  
Silicon Quantum Wires

The impact of low symmetry on the electronic and optical properties of quantum wires

2000 ◽  
Vol 52 (4) ◽  
pp. 420-426 ◽  
Author(s):  
M. A Dupertuis ◽  
E Martinet ◽  
D. Y Oberli ◽  
E Kapon
Keyword(s):  
Optical Properties ◽  
Quantum Wires ◽  
Electronic And Optical Properties ◽  
The Impact ◽  
Low Symmetry

Orientation effects in the electronic and optical properties of germanium quantum wires

2004 ◽  
Vol 70 (3) ◽  
Author(s):  
Alexandre N. Kholod ◽  
V. L. Shaposhnikov ◽  
N. Sobolev ◽  
V. E. Borisenko ◽  
F. Arnaud D’Avitaya ◽  
...  
Keyword(s):  
Optical Properties ◽  
Quantum Wires ◽  
Electronic And Optical Properties ◽  
Orientation Effects

Ab-Initio Calculation of the Optical Properties of Silicon Quantum Wires

1996 ◽  
Vol 452 ◽  
Author(s):  
Stefano Ossicini ◽  
M. Biagini ◽  
C. M. Bertoni ◽  
G. Roma ◽  
O. Bisi
Keyword(s):  
Optical Properties ◽  
Ab Initio Calculation ◽  
Quantum Wires ◽  
Infrared Region ◽  
Band Gap Energy ◽  
Localized States ◽  
Visible Range ◽  
Porous Si ◽  
Gap Energy ◽  
Silicon Quantum Wires

AbstractWe studied the effect of H, O passivation and inter-wire interaction on the optical properties of nanoscale Si wires. We find that wires with diameters as small as 10–25 Å are active in the visible range. Inter-wire interaction leads to the presence of localized states which lower the band gap energy. The presence of dangling bonds generates broad features in the infrared region. O-Si bonds reduce the absorption threshold. These results are important for the discussions concerning absorption and luminescence in porous Si.

ELECTRONIC AND OPTICAL PROPERTIES OF QUASIPERIODIC FIBONACCI SUPERLATTICES

1987 ◽  
Vol 48 (C5) ◽  
pp. C5-529-C5-532 ◽  
Author(s):  
F. LARUELLE ◽  
V. THIERRY-MIEG ◽  
M. C. JONCOUR ◽  
B. ETIENNE
Keyword(s):  
Optical Properties ◽  
Electronic And Optical Properties
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