Photoluminescence spectrum and dynamics in oxidized silicon nanocrystals: A nanoscopic disorder system

1996 ◽  
Vol 53 (20) ◽  
pp. 13515-13520 ◽  
Author(s):  
Yoshihiko Kanemitsu
2008 ◽  
Author(s):  
Anoop Gupta ◽  
Folarin Erogbogbo ◽  
Mark T. Swihart ◽  
Hartmut Wiggers

2003 ◽  
Vol 770 ◽  
Author(s):  
Nathanael Smith ◽  
Max J. Lederer ◽  
Marek Samoc ◽  
Barry Luther-Davies ◽  
Robert G. Elliman

AbstractOptical pump-probe measurements were performed on planar slab waveguides containing silicon nanocrystals in an attempt to measure optical gain from photo-excited silicon nanocrystals. Two experiments were performed, one with a continuous-wave probe beam and a pulsed pump beam, giving a time resolution of approximately 25 ns, and the other with a pulsed pump and probe beam, giving a time resolution of approximately 10 ps. In both cases the intensity of the probe beam was found to be attenuated by the pump beam, with the attenuation increasing monotonically with increasing pump power. Time-resolved measurements using the first experimental arrangement showed that the probe signal recovered its initial intensity on a time scale of 45-70 μs, a value comparable to the exciton lifetime in Si nanocrystals. These data are shown to be consistent with an induced absorption process such as confined carrier absorption. No evidence for optical gain was observed.


2003 ◽  
Vol 770 ◽  
Author(s):  
H. Przybylinska ◽  
N. Q. Vinh ◽  
B.A. Andreev ◽  
Z. F. Krasil'nik ◽  
T. Gregorkiewicz

AbstractA successful observation and analysis of the Zeeman effect on the near 1.54 μm photoluminescence spectrum in Er-doped crystalline MBE-grown silicon are reported. A clearly resolved splitting of 5 major spectral components was observed in magnetic fields up to 5.5 T. Based on the analysis of the data the symmetry of the dominant optically active center was conclusively established as orthorhombic I (C2v), with g‼≈18.4 and g⊥≈0 in the ground state. The fact that g⊥≈0 explains why EPR detection of Er-related optically active centers in silicon may be difficult. Preferential generation of a single type of an optically active Er-related center in MBE growth confirmed in this study is essential for photonic applications of Si:Er.


2009 ◽  
Vol 41 (6) ◽  
pp. 998-1001 ◽  
Author(s):  
M. Grün ◽  
P. Miska ◽  
E. Neu ◽  
D. Steinmetz ◽  
F. Montaigne ◽  
...  
Keyword(s):  

2020 ◽  
pp. 129350
Author(s):  
Mark S. Ferris ◽  
Ashley P. Chesney ◽  
Bradley J. Ryan ◽  
Utkarsh Ramesh ◽  
Matthew G. Panthani ◽  
...  

Author(s):  
B. De Salvo ◽  
C. Gerardi ◽  
S. Lombardo ◽  
T. Baron ◽  
L. Perniola ◽  
...  

Nanoscale ◽  
2021 ◽  
Author(s):  
Ivan Marri ◽  
Stefano Ossicini

An important challenge in the field of renewable energy is the development of novel nanostructured solar cell devices which implement low-dimensional materials to overcome the limits of traditional photovoltaic systems....


1989 ◽  
Vol 42 (6) ◽  
pp. 365-373 ◽  
Author(s):  
K.P. O'Donnell ◽  
A. Marshall ◽  
M. Yamaga ◽  
B. Henderson ◽  
B. Cockayne

Sign in / Sign up

Export Citation Format

Share Document