Effect of non-Ohmic back contacts in capacitance transient measurements on hydrogenated amorphous silicon

1995 ◽  
Vol 52 (4) ◽  
pp. R2233-R2236 ◽  
Author(s):  
W. B. Jackson ◽  
N. M. Johnson
Keyword(s):  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Capacitance Transient ◽  
Hydrogenated Amorphous ◽  
Transient Measurements

Effect of Contacts on Capacitance Transient Measurements in N-Type Hydrogenated Amorphous Silicon

1995 ◽  
Vol 377 ◽  
Author(s):  
W. B. Jackson ◽  
N. M. Johnson ◽  
J. Walker
Keyword(s):  
Amorphous Silicon ◽  
Pulse Duration ◽  
Ohmic Contacts ◽  
Hydrogenated Amorphous Silicon ◽  
Charge Injection ◽  
Current Injection ◽  
Anomalous Dependence ◽  
Capacitance Transient ◽  
Hydrogenated Amorphous ◽  
Transient Measurements

ABSTRACTMeasurement of the dependence of emission capacitance transients on filling pulse duration has been extended to devices with Ohmic back contacts. Capacitance transients on devices possessing identical bulk 20-ppm P doped a-Si:H but either Ohmic contacts or blocking contacts were compared. The devices with blocking contacts completely reproduced in quantitative detail the previously observed anomalous dependence of capacitance transients on filling pulse duration. The diodes with Ohmic contacts showed no evidence of the anomalous filling pulse effect even for light-degraded, resistive samples. Current injection measurements show that blocking contacts delay the charge injection into the device by about 10–100 msec.

BONDING IN HYDROGENATED AMORPHOUS SILICON

1981 ◽  
Vol 42 (C4) ◽  
pp. C4-773-C4-777 ◽  
Author(s):  
H. R. Shanks ◽  
F. R. Jeffrey ◽  
M. E. Lowry
Keyword(s):  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Hydrogenated Amorphous

High Rate Deposition of Stable Hydrogenated Amorphous Silicon in Transition from Amorphous to Microcrystalline Silicon

2003 ◽  
Vol 762 ◽  
Author(s):  
Guofu Hou ◽  
Xinhua Geng ◽  
Xiaodan Zhang ◽  
Ying Zhao ◽  
Junming Xue ◽  
...  
Keyword(s):  
Phase Transition ◽  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Chemical Vapor ◽  
High Rate ◽  
Very High Frequency ◽  
High Quality ◽  
Working Pressure ◽  
Hydrogen Dilution ◽  
Hydrogenated Amorphous

AbstractHigh rate deposition of high quality and stable hydrogenated amorphous silicon (a-Si:H) films were performed near the threshold of amorphous to microcrystalline phase transition using a very high frequency plasma enhanced chemical vapor deposition (VHF-PECVD) method. The effect of hydrogen dilution on optic-electronic and structural properties of these films was investigated by Fourier-transform infrared (FTIR) spectroscopy, Raman scattering and constant photocurrent method (CPM). Experiment showed that although the phase transition was much influenced by hydrogen dilution, it also strongly depended on substrate temperature, working pressure and plasma power. With optimized condition high quality and high stable a-Si:H films, which exhibit σph/σd of 4.4×106 and deposition rate of 28.8Å/s, have been obtained.

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