Intraband absorption in semiconductor quantum wells in the presence of a perpendicular magnetic field

1995 ◽  
Vol 52 (11) ◽  
pp. 8305-8311 ◽  
Author(s):  
S. Živanović ◽  
V. Milanović ◽  
Z. Ikonić
2015 ◽  
Vol 91 (23) ◽  
Author(s):  
Kankan Cong ◽  
Yongrui Wang ◽  
Ji-Hee Kim ◽  
G. Timothy Noe ◽  
Stephen A. McGill ◽  
...  

1995 ◽  
Vol 17 (11-12) ◽  
pp. 1549-1553 ◽  
Author(s):  
V. D. Kulakovskii ◽  
M. G. Tyazhlov ◽  
S. I. Gubarev ◽  
D. R. Yakovlev ◽  
A. Waag ◽  
...  

2011 ◽  
Vol 25 (32) ◽  
pp. 2451-2459 ◽  
Author(s):  
U. YESILGUL ◽  
F. UNGAN ◽  
E. KASAPOGLU ◽  
H. SARI ◽  
I. SÖKMEN

The intersubband transitions and impurity binding energy in differently shaped semiconductor quantum wells under a magnetic field are calculated using a variational method within the effective mass approximation. Our calculations have revealed the dependence of the intersubband transitions and impurity binding energy on the magnetic field strength and the shape of the quantum wells.


1989 ◽  
Vol 54 (3) ◽  
pp. 247-249 ◽  
Author(s):  
Z. Ikonić ◽  
V. Milanović ◽  
D. Tjapkin

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