Crystal structures and low-temperature behaviors of the heavy-fermion compoundsCeRuGe3andCe3Ru4Ge13containing both trivalent and tetravalent cerium

1995 ◽  
Vol 52 (10) ◽  
pp. 7267-7277 ◽  
Author(s):  
K. Ghosh ◽  
S. Ramakrishnan ◽  
S. K. Dhar ◽  
S. K. Malik ◽  
Girish Chandra ◽  
...  
1985 ◽  
Vol 119 (1) ◽  
pp. 225-232 ◽  
Author(s):  
Bernard Galiois ◽  
Jacques Gaultier ◽  
Christian Hauw ◽  
Daniel Chasseau ◽  
Alain Meresse ◽  
...  

2005 ◽  
Vol 58 (7) ◽  
pp. 531
Author(s):  
Laura Andrau ◽  
Jonathan M. White

Low-temperature X-ray crystal structures were determined on a range of derivatives of 4-thiacyclohexanol 5a of varying electron demand with a view to finding evidence for a through-bond interaction between the sulfur lone pair and the oxygenated substituent. In contrast to earlier suggestions, plots of C–OR bond distance versus pKa (ROH) showed that any interaction between the sulfur and the OR group is unlikely to be of a through-bond origin. Furthermore, unimolecular solvolysis rate measurements on the nosylate ester derivative 5g showed that the sulfur actually retards the reaction slightly in comparison with the corresponding sulfur-free analogue 6.


2001 ◽  
Vol 50 (8) ◽  
pp. 1632
Author(s):  
MENG JI-BAO ◽  
CHEN ZHAO-JIA ◽  
LUO JIAN-LIN ◽  
BAI HAI-YANG ◽  
WANG WEI-HUA ◽  
...  

1988 ◽  
Vol 76-77 ◽  
pp. 223-225 ◽  
Author(s):  
J. Odin ◽  
E. Bucher ◽  
A.A. Menovsky ◽  
L. Taillefer ◽  
A. De Visser

2004 ◽  
Vol 59 (6) ◽  
pp. 635-638 ◽  
Author(s):  
Norbert W. Mitzel ◽  
Udo Losehand

The compounds (H3C)2S, (H3Si)2S and (H3Ge)2S have been crystallised in situ on a diffractometer and their crystal structures determined by low-temperature X-ray diffraction. The molecules are present as monomers in the crystals. The aggregation of the molecules through secondary intermolecular contacts in the crystal is different: (H3C)2S is weakly associated into dimers by S···S contacts, whereas (H3Si)2S and (H3Ge)2S form Si···S and Ge···S contacts in an ice-analogous aggregation motif. Important geometry parameters are (H3C)2S: C-S 1.794(av) Å , C-S-C 99.2(1)°; (H3Si)2S: Si- S 2.143(1) Å , Si-S-Si 98.4°; (H3Ge)2S Ge-S 2.223(2) and 2.230(2) Å , Ge-S-Ge 98.2(1)◦.


2006 ◽  
Vol 378-380 ◽  
pp. 74-75 ◽  
Author(s):  
Z. Hossain ◽  
C. Geibel ◽  
T. Radu ◽  
Y. Tokiwa ◽  
F. Weickert ◽  
...  

2000 ◽  
Vol 61 (14) ◽  
pp. 9467-9474 ◽  
Author(s):  
O. Trovarelli ◽  
C. Geibel ◽  
R. Cardoso ◽  
S. Mederle ◽  
R. Borth ◽  
...  

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