Measurement of theIn0.52Al0.48As valence-band hydrostatic deformation potential and the hydrostatic-pressure dependence of theIn0.52Al0.48As/InP valence-band offset

1995 ◽  
Vol 52 (20) ◽  
pp. 14682-14687 ◽  
Author(s):  
C. N. Yeh ◽  
L. E. McNeil ◽  
R. E. Nahory ◽  
R. Bhat
Keyword(s):  
Hydrostatic Pressure ◽  
Valence Band ◽  
Pressure Dependence ◽  
Band Offset ◽  
Deformation Potential ◽  
Valence Band Offset

Pressure Dependence of the Valence-Band Offset in (GaAs)8/(Al0.3Ga0.7As)12Short Period Superlattice

1993 ◽  
Vol 32 (S1) ◽  
pp. 125 ◽  
Author(s):  
Zhen-xian Liu ◽  
Guo-hua Li ◽  
He-xiang Han ◽  
Zhao-ping Wang ◽  
De-sheng Jiang ◽  
...  
Keyword(s):  
Valence Band ◽  
Pressure Dependence ◽  
Band Offset ◽  
Valence Band Offset

Temperature Dependence of the Intervalley Deformation Potential of GaAs/AlAs Superlattices Under Hydrostatic Pressure

1997 ◽  
Vol 499 ◽  
Author(s):  
S. Guha ◽  
Q. Cai ◽  
M. Chandrasekhar ◽  
H. R. Chandrasekhar ◽  
Hyunjung Kim ◽  
...  
Keyword(s):  
Hydrostatic Pressure ◽  
Temperature Dependence ◽  
Pressure Dependence ◽  
Type I ◽  
Type Ii ◽  
Deformation Potential ◽  
Intervalley Scattering

ABSTRACTWe have studied the pressure dependence of the type-I and type-II transitions in (GaAs)m/(AlAs)m superlattices by photoluminescence (PL) spectroscopy. From the study of PL linewidths of the type-I exciton as a function of pressure and temperature, we determine the intervalley deformation potential. Beyond the type-I and type-II crossover, the PL linewidth increases both as a function of pressure and temperature. We find that the electron-phonon deformation potential for Γ-X intervalley scattering varies with temperature.

Determination of the valence-band offset of GaAs-(Ga,In)P quantum wells by photoreflectance spectroscopy

1992 ◽  
Vol 46 (3) ◽  
pp. 1886-1888 ◽  
Author(s):  
Gérald Arnaud ◽  
Philippe Boring ◽  
Bernard Gil ◽  
Jean-Charles Garcia ◽  
Jean-Pierre Landesman ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Valence Band ◽  
Band Offset ◽  
Valence Band Offset ◽  
Photoreflectance Spectroscopy

X-ray photoelectron spectroscopy measurement of n-ZnO/p-NiO heterostructure valence-band offset

2009 ◽  
Vol 94 (2) ◽  
pp. 022108 ◽  
Author(s):  
R. Deng ◽  
B. Yao ◽  
Y. F. Li ◽  
Y. M. Zhao ◽  
B. H. Li ◽  
...  
Keyword(s):  
Valence Band ◽  
Photoelectron Spectroscopy ◽  
Band Offset ◽  
Valence Band Offset ◽  
X Ray ◽  
Spectroscopy Measurement

scholarly journals Valence band offset of InN∕AlN heterojunctions measured by x-ray photoelectron spectroscopy

2007 ◽  
Vol 90 (13) ◽  
pp. 132105 ◽  
Author(s):  
P. D. C. King ◽  
T. D. Veal ◽  
P. H. Jefferson ◽  
C. F. McConville ◽  
T. Wang ◽  
...  
Keyword(s):  
Valence Band ◽  
Photoelectron Spectroscopy ◽  
Band Offset ◽  
Valence Band Offset ◽  
X Ray

A simulation study of valence band offset engineering at the perovskite/Cu2ZnSn(Se1-xSx)4 interface for enhanced performance

2019 ◽  
Vol 90 ◽  
pp. 59-64 ◽  
Author(s):  
Nian Cheng ◽  
Weiwei Li ◽  
Shujie Sun ◽  
Zhiqiang Zhao ◽  
Zhenyu Xiao ◽  
...  
Keyword(s):  
Valence Band ◽  
Simulation Study ◽  
Band Offset ◽  
Valence Band Offset

The growth of ZnO on buffer layers and the valence band offset determined by X-ray photoemission spectroscopy

2010 ◽  
Vol 150 (41-42) ◽  
pp. 1991-1994 ◽  
Author(s):  
H.P. Song ◽  
G.L. Zheng ◽  
A.L. Yang ◽  
Y. Guo ◽  
H.Y. Wei ◽  
...  
Keyword(s):  
Valence Band ◽  
Buffer Layers ◽  
Photoemission Spectroscopy ◽  
Band Offset ◽  
Valence Band Offset ◽  
X Ray

Small valence band offset of h-BN/Al0.7Ga0.3N heterojunction measured by X-ray photoelectron spectroscopy

2019 ◽  
Vol 114 (1) ◽  
pp. 011603 ◽  
Author(s):  
Guo-Dong Hao ◽  
Sachiko Tsuzuki ◽  
Shin-ichiro Inoue
Keyword(s):  
Valence Band ◽  
Photoelectron Spectroscopy ◽  
Band Offset ◽  
Valence Band Offset ◽  
X Ray
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