Probing growth-related disorder by high-field transport in semiconductor superlattices

1995 ◽  
Vol 52 (19) ◽  
pp. 13788-13791 ◽  
Author(s):  
A. Wacker ◽  
G. Schwarz ◽  
F. Prengel ◽  
E. Schöll ◽  
J. Kastrup ◽  
...  
Keyword(s):  
High Field ◽  
Semiconductor Superlattices ◽  
Related Disorder

Nonresonant carrier transport through high-field domains in semiconductor superlattices

1995 ◽  
Vol 51 (15) ◽  
pp. 9943-9951 ◽  
Author(s):  
S. H. Kwok ◽  
H. T. Grahn ◽  
M. Ramsteiner ◽  
K. Ploog ◽  
F. Prengel ◽  
...  
Keyword(s):  
High Field ◽  
Carrier Transport ◽  
Semiconductor Superlattices

scholarly journals High-field transport in semiconductor superlattices for interacting Wannier–Stark levels

2008 ◽  
Vol 44 (2) ◽  
pp. 249-258
Author(s):  
Angelo Guida ◽  
Lino Reggiani ◽  
Marcello Rosini
Keyword(s):  
High Field ◽  
Semiconductor Superlattices

Study of segregation in La1.8Sr0.2CuO4 superconductor by STEM-EDS microanalysis

1987 ◽  
Vol 45 ◽  
pp. 54-55
Author(s):  
T. F. Kelly ◽  
P. J. Lee ◽  
E. E. Hellstrom ◽  
D. C. Larbalestier
Keyword(s):  
Rare Earth ◽  
High Field ◽  
Transport Current ◽  
Total Thickness ◽  
New Class ◽  
Ceramic Superconductors ◽  
Current Densities ◽  
Group Ii ◽  
Eds Microanalysis

Recently there has been much excitement over a new class of high Tc (>30 K) ceramic superconductors of the form A1-xBxCuO4-x, where A is a rare earth and B is from Group II. Unfortunately these materials have only been able to support small transport current densities 1-10 A/cm2. It is very desirable to increase these values by 2 to 3 orders of magnitude for useful high field applications. The reason for these small transport currents is as yet unknown. Evidence has, however, been presented for superconducting clusters on a 50-100 nm scale and on a 1-3 μm scale. We therefore planned a detailed TEM and STEM microanalysis study in order to see whether any evidence for the clusters could be seen.A La1.8Sr0.2Cu04 pellet was cut into 1 mm thick slices from which 3 mm discs were cut. The discs were subsequently mechanically ground to 100 μm total thickness and dimpled to 20 μm thickness at the center.

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