Pressure-temperature phase diagram of solid hydrogen sulfide determined by Raman spectroscopy

1995 ◽  
Vol 51 (14) ◽  
pp. 9391-9394 ◽  
Author(s):  
H. Shimizu ◽  
H. Yamaguchi ◽  
S. Sasaki ◽  
A. Honda ◽  
S. Endo ◽  
...  
2007 ◽  
Vol 14 (04) ◽  
pp. 719-723 ◽  
Author(s):  
M. M. CHAUDHRI ◽  
M. M. O. KHAYYAT ◽  
D. G. HASKO

Raman spectroscopy, which is a non-destructive technique, has been used to investigate the effect of sample temperature on indentation-induced crystallographic phase transitions in crystalline silicon and amorphous silicon films deposited on a sapphire crystal. It has been shown that in both types of sample, whereas 300 K Vickers diamond indentations lead to the transformation to the Si -II phase during indenter loading on the crystalline and amorphous samples, there is no such transformation in either sample when it is cooled down to 77 K. An explanation of the experimental results has been provided using the pressure–temperature phase diagram of silicon.


1996 ◽  
Vol 219-220 ◽  
pp. 523-525 ◽  
Author(s):  
H. Nakayama ◽  
H. Yamaguchi ◽  
S. Sasaki ◽  
H. Shimizu

2021 ◽  
Vol 103 (21) ◽  
Author(s):  
M. Léger ◽  
E. Lhotel ◽  
E. Ressouche ◽  
K. Beauvois ◽  
F. Damay ◽  
...  

2017 ◽  
Vol 56 (9) ◽  
pp. 4950-4955 ◽  
Author(s):  
J. L. Musfeldt ◽  
K. R. O’Neal ◽  
T. V. Brinzari ◽  
P. Chen ◽  
J. A. Schlueter ◽  
...  

2015 ◽  
Vol 91 (13) ◽  
Author(s):  
Agnès Dewaele ◽  
Vincent Stutzmann ◽  
Johann Bouchet ◽  
François Bottin ◽  
Florent Occelli ◽  
...  

2005 ◽  
Vol 53 (19) ◽  
pp. 5071-5077 ◽  
Author(s):  
V.A. Chernenko ◽  
J. Pons ◽  
E. Cesari ◽  
K. Ishikawa

2015 ◽  
Vol 107 (22) ◽  
pp. 221908 ◽  
Author(s):  
Serge Desgreniers ◽  
John S. Tse ◽  
Takahiro Matsuoka ◽  
Yasuo Ohishi ◽  
Quan Li ◽  
...  

2009 ◽  
Vol 78 (7) ◽  
pp. 074716 ◽  
Author(s):  
Yasuo Yoshida ◽  
Tatsuya Kawae ◽  
Yuko Hosokoshi ◽  
Katsuya Inoue ◽  
Nobuya Maeshima ◽  
...  

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