Surface and size effects on ferroelectric films with domain structures

1995 ◽  
Vol 51 (8) ◽  
pp. 5311-5314 ◽  
Author(s):  
Y. G. Wang ◽  
W. L. Zhong ◽  
P. L. Zhang
2021 ◽  
Vol 11 (1) ◽  
Author(s):  
P. Yudin ◽  
K. Shapovalov ◽  
T. Sluka ◽  
J. Peräntie ◽  
H. Jantunen ◽  
...  

AbstractThe intrinsic mobile interfaces in ferroelectrics—the domain walls can drive and enhance diverse ferroelectric properties, essential for modern applications. Control over the motion of domain walls is of high practical importance. Here we analyse theoretically and show experimentally epitaxial ferroelectric films, where mobile domain walls coexist and interact with immobile growth-induced interfaces—columnar boundaries. Whereas these boundaries do not disturb the long-range crystal order, they affect the behaviour of domain walls in a peculiar selective manner. The columnar boundaries substantially modify the behaviour of non-ferroelastic domains walls, but have negligible impact on the ferroelastic ones. The results suggest that introduction of immobile boundaries into ferroelectric films is a viable method to modify domain structures and dynamic responses at nano-scale that may serve to functionalization of a broader range of ferroelectric films where columnar boundaries naturally appear as a result of the 3D growth.


1995 ◽  
Vol 51 (23) ◽  
pp. 17235-17238 ◽  
Author(s):  
Y. G. Wang ◽  
W. L. Zhong ◽  
P. L. Zhang

2000 ◽  
Vol 28 (1-4) ◽  
pp. 175-192 ◽  
Author(s):  
Seshu B. Desu ◽  
Orest G. Vendik

Materials ◽  
2014 ◽  
Vol 7 (9) ◽  
pp. 6502-6568 ◽  
Author(s):  
Jianyi Liu ◽  
Weijin Chen ◽  
Biao Wang ◽  
Yue Zheng

1994 ◽  
Vol 189 (1-2) ◽  
pp. 121-126 ◽  
Author(s):  
W.L. Zhong ◽  
Y.G. Wang ◽  
P.L. Zhang

2003 ◽  
Vol 42 (Part 1, No. 9B) ◽  
pp. 6183-6187 ◽  
Author(s):  
Dan Ricinschi ◽  
Yoshihiro Ishibashi ◽  
Masanori Okuyama

2001 ◽  
Vol 688 ◽  
Author(s):  
H. Kohlstedt ◽  
N. A. Pertsev ◽  
R. Waser

AbstractExtrinsic and intrinsic size effects on the spontaneous polarization of epitaxial ferroelectric films are discussed. The extrinsic effect of electrostatic origin is attributed to the presence of nonferroelectric subsurface layers in the film. Theoretical studies of this depolarizing-field effect are reviewed. It is concluded that, for perovskite ferroelectrics sandwiched between electrodes with a perovskite structure, the depolarizing-field effect on the static properties should be negligible. The extrinsic size effect is also attributed to the thickness dependence of the film in-plane lattice strain Sm, which is due to the generation of misfit dislocations in the epitaxy. Variation of the film polarization with the misfit strain Sm is described by a nonlinear thermodynamic theory, which allows for the mechanical film/substrate interaction. The intrinsic effect of the film surfaces, which is associated with spatial correlations of the ferroelectric polarization, is simultaneously taken into account via the concept of extrapolation length δ. It is shown that, in films grown on compressive substrates (Sm < 0), the strain-induced increase of the mean polarization prevails over the negative intrinsic size effect (δ > 0). As a result, well below the transition temperature, ferroelectricity may be present even in nanometer-thick epitaxial layers. Motivated by this result, we propose the concept of ferroelectric tunnel junction. First results on tunnelling through ultrathin barriers of perovskite ferroelectrics are presented.


2007 ◽  
Vol 33 (3) ◽  
pp. 231-234 ◽  
Author(s):  
O. G. Vendik ◽  
N. Yu. Medvedeva ◽  
S. P. Zubko

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