Schottky contacts on a highly doped organic semiconductor

1995 ◽  
Vol 51 (23) ◽  
pp. 17251-17254 ◽  
Author(s):  
E.J. Lous ◽  
P.W.M. Blom ◽  
L.W. Molenkamp ◽  
D.M. de Leeuw
Keyword(s):  
Organic Semiconductor ◽  
Schottky Contacts

Unusual electromechanical effects in organic semiconductor Schottky contacts: Between piezoelectricity and electrostriction

2005 ◽  
Vol 87 (16) ◽  
pp. 163501 ◽  
Author(s):  
Gilles Dennler ◽  
Christoph Lungenschmied ◽  
Niyazi Serdar Sariciftci ◽  
Reinhard Schwödiauer ◽  
Siegfried Bauer ◽  
...  
Keyword(s):  
Organic Semiconductor ◽  
Schottky Contacts ◽  
Electromechanical Effects ◽  
Piezoelectricity And Electrostriction

An atomic-resolution microscope study of Al contracts on GaAs

1986 ◽  
Vol 44 ◽  
pp. 726-727
Author(s):  
Z. Liliental-Weber ◽  
C. Nelson ◽  
R. Ludeke ◽  
R. Gronsky ◽  
J. Washburn
Keyword(s):  
High Speed ◽  
Schottky Contacts ◽  
Detailed Knowledge ◽  
The Past ◽  
Semiconductor Interfaces ◽  
Deposited Metal ◽  
Microwave Applications ◽  
Free Interfaces ◽  
Potential Use

The properties of metal/semiconductor interfaces have received considerable attention over the past few years, and the Al/GaAs system is of special interest because of its potential use in high-speed logic integrated optics, and microwave applications. For such materials a detailed knowledge of the geometric and electronic structure of the interface is fundamental to an understanding of the electrical properties of the contact. It is well known that the properties of Schottky contacts are established within a few atomic layers of the deposited metal. Therefore surface contamination can play a significant role. A method for fabricating contamination-free interfaces is absolutely necessary for reproducible properties, and molecularbeam epitaxy (MBE) offers such advantages for in-situ metal deposition under UHV conditions

Microstructure studies of tungsten silicide schottky contacts on Gaas

1987 ◽  
Vol 45 ◽  
pp. 328-329
Author(s):  
Yih-Cheng Shih ◽  
E. L. Wilkie
Keyword(s):  
Thermal Stability ◽  
Field Effect Transistors ◽  
Schottky Contact ◽  
Schottky Contacts ◽  
Excellent Thermal Stability ◽  
Barrier Heights ◽  
Gaas Substrates ◽  
Film Adhesion ◽  
Threshold Voltages ◽  
Thermal Stability Of

Tungsten silicides (WSix) have been successfully used as the gate materials in self-aligned GaAs metal-semiconductor-field- effect transistors (MESFET). Thermal stability of the WSix/GaAs Schottky contact is of major concern since the n+ implanted source/drain regions must be annealed at high temperatures (∼ 800°C). WSi0.6 was considered the best composition to achieve good device performance due to its low stress and excellent thermal stability of the WSix/GaAs interface. The film adhesion and the uniformity in barrier heights and ideality factors of the WSi0.6 films have been improved by depositing a thin layer of pure W as the first layer on GaAs prior to WSi0.6 deposition. Recently WSi0.1 has been used successfully as the gate material in 1x10 μm GaAs FET's on the GaAs substrates which were sputter-cleaned prior to deposition. These GaAs FET's exhibited uniform threshold voltages across a 51 mm wafer with good film adhesion after annealing at 800°C for 10 min.

Homogenization of Organic Semiconductor Films Formed by Vertical Electro-spray Deposition

2020 ◽  
Vol 140 (4) ◽  
pp. 179-185
Author(s):  
Hiroshi Yamauchi ◽  
Yugo Okada ◽  
Takashi Tadokoro ◽  
Kazuhiro Kudo
Keyword(s):  
Organic Semiconductor ◽  
Spray Deposition ◽  
Semiconductor Films

Annealing Behavior with Thickness Hindered Nucleation in Small-Molecule Organic Semiconductor Thin Films

2019 ◽  
Vol 19 (7) ◽  
pp. 3777-3784
Author(s):  
Jakub Rozbořil ◽  
Katharina Broch ◽  
Roland Resel ◽  
Ondřej Caha ◽  
Filip Münz ◽  
...  
Keyword(s):  
Thin Films ◽  
Small Molecule ◽  
Organic Semiconductor ◽  
Annealing Behavior ◽  
Semiconductor Thin Films
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