Role of Ge surface segregation in Si/Ge interfacial ordering: Interface formation on a monohydride surface

1995 ◽  
Vol 51 (20) ◽  
pp. 14786-14789 ◽  
Author(s):  
Nobuyuki Ikarashi ◽  
Atsushi Oshiyama ◽  
Akira Sakai ◽  
Toru Tatsumi
Keyword(s):  
Surface Segregation ◽  
Interface Formation

Growth of Group IV-IV Heterostructures: Initial Stages of Interface Formation

1986 ◽  
Vol 67 ◽  
Author(s):  
H.-J. Gossmann ◽  
L. C. Feldman
Keyword(s):  
Surface Segregation ◽  
Substrate Surface ◽  
Group Iv ◽  
Necessary Condition ◽  
Ion Scattering ◽  
Interface Formation ◽  
General Role ◽  
Low Energy Electron ◽  
Critical Coverage

ABSTRACTThe two major issues in the growth of a heterostructure are (1) the degree of perfection of the overlayer and (2) the sharpness of the interface. The initial stages of interface formation play a crucial role in this respect. Relevant questions are addressed under atomically clean conditions in the Si/Ge Si/Si and Ge/Sn systems, using ion scattering surface analysis, low energy electron diffraction and Auger electron spectroscopy. Of particular interest with respect to (1) is the general role of reconstruction in epitaxial growth: A necessary condition for perfect growth is the reordering of the substrate surface reconstruction. We show that the deposition temperature necessary to achieve this reordering depends strongly on the topography of the substrate reconstruction. For example, Ge deposition at room-temperature reorders the Si(100)2×1 reconstruction but not the Si(111)7×7, implying different epitaxial temperatures for these two substrates. To illustrate (2) we discuss the complex growth and anomalous diffusion found in the Ge/Sn system. Below a certain critical coverage Θc (1.15·1015 cm−2) no indiffusion of the Sn overlayer takes place, even at 700 K, although above Θc severe indiffusion does occur at this temperature. This result is discussed in terms of theories of surface segregation.

scholarly journals Epitaxy in Lattice-Mismatched Systems. Role of Strain in Si/SiO2 Interface Formation.

Hyomen Kagaku ◽  
2000 ◽  
Vol 21 (6) ◽  
pp. 361-366 ◽  
Author(s):  
Hiroyuki KAGESHIMA ◽  
Kenji SHIRAISHI ◽  
Masashi UEMATSU
Keyword(s):  
Interface Formation

The Role of Low-Energy Ion/Surface Interactions During Crystal Growth From the Vapor Phase

1986 ◽  
Vol 74 ◽  
Author(s):  
J. E. Greene ◽  
A. Rockett ◽  
J.-E. Sundgren
Keyword(s):  
Surface Segregation ◽  
Ion Irradiation ◽  
Ion Bombardment ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Low Energy ◽  
Nucleation Kinetics ◽  
Wear Resistant Coatings ◽  
Average Grain Size

AbstractLow-energy (often < 100 eV) ion bombardment during thin film deposition is commonly used in such diverse application areas as microelectronics, optical coatings. magnetic recording layers. and hard wear resistant coatings to modify the microstructure and microchemistry of films deposited by a variety of techniques (e.g. sputtering, primary ion deposition, plasma-assisted CVD, and accelerated-beam MBE). Ion irradiation has been shown to affect every phase of deposition including nucleation and growth kinetics, crystal structure and phase stability, the average grain size and degree of preferred orientation of polycrystalline films, the epitaxial temperature of single-crystal films, defect concentrations, elemental incorporation probabilities, surface segregation, and, hence, film properties. As discussed in this brief review, a detailed understanding of many of these processes is beginning to emerge. Effects such as trapping, preferential sputtering, enhanced diffusion, and collisional mixing have been used to interpret and, in some cases, model experimental results. Nevertheless, there are still large gaps in our knowledge of the role of ion bombardment on fundamental processes such as nucleation kinetics.

Step-Driven Surface Segregation and Ordering During Si-Ge MBE Growth

1992 ◽  
Vol 263 ◽  
Author(s):  
D. E. Jesson ◽  
S. J. Pennycook ◽  
J.-M. Baribeau ◽  
D. C. Houghton
Keyword(s):  
Surface Segregation ◽  
Ordered Structure ◽  
Mbe Growth ◽  
Vertical Segregation ◽  
Z Contrast ◽  
Lateral Segregation ◽  
Phase Variants ◽  
Step Edges

ABSTRACTAn important role of type SB step edges in determining the as-grown microstructure of Si-Ge superlattices and alloys is implicated from direct Z-contrast images of as-grown structures. A variety of different ordered phase variants can arise at each Si on Ge interface as a result of vertical segregation during superlattice growth. A new monoclinic-ordered structure is predicted to arise as a result of lateral segregation during alloy growth.

Role of 1,3-Propane Sultone and Vinylene Carbonate in Solid Electrolyte Interface Formation and Gas Generation

2015 ◽  
Vol 119 (21) ◽  
pp. 11337-11348 ◽  
Author(s):  
Bo Zhang ◽  
Michael Metzger ◽  
Sophie Solchenbach ◽  
Martin Payne ◽  
Stefano Meini ◽  
...  
Keyword(s):  
Solid Electrolyte ◽  
Solid Electrolyte Interface ◽  
Interface Formation ◽  
Gas Generation ◽  
Vinylene Carbonate ◽  
Electrolyte Interface

Surface segregation during Si/Gen/Si(100) interface formation

1994 ◽  
Vol 76 (6) ◽  
pp. 3911-3913 ◽  
Author(s):  
Z. H. Lu ◽  
J.‐M. Baribeau ◽  
D. J. Lockwood
Keyword(s):  
Surface Segregation ◽  
Interface Formation
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