Short- and long-range-order effects on the electronic properties of III-V semiconductor alloys

1995 ◽  
Vol 51 (16) ◽  
pp. 10462-10476 ◽  
Author(s):  
Kurt A. Mäder ◽  
Alex Zunger
1995 ◽  
Vol 52 (15) ◽  
pp. 10800-10802 ◽  
Author(s):  
Z. X. Yang ◽  
G. H. Wei ◽  
X. Q. Dai ◽  
L. D. Wan ◽  
M. Wang ◽  
...  

1993 ◽  
Vol 62 (16) ◽  
pp. 1937-1939 ◽  
Author(s):  
Su‐Huai Wei ◽  
David B. Laks ◽  
Alex Zunger

1993 ◽  
Vol 73 (9) ◽  
pp. 4260-4265 ◽  
Author(s):  
Jun Ni ◽  
Xinchun Lai ◽  
Binglin Gu

1995 ◽  
Vol 417 ◽  
Author(s):  
Su-Huai Wei ◽  
Alberto Franceschetti ◽  
Alex Zunger

AbstractMany III – V semiconductor alloys exhibit spontaneous (111) alternate monolayer ordering when grown from the vapor phase. We have studied theoretically the ordering induced changes in the optical properties of the semiconductor alloys. We describe (i) the change of the band gap ΔE9, and the valence band splitting ΔE12 as functions of the long range order parameter η, (ii) the consequence of coexistence of (001) epitaxial strain and (111) chemical ordering on the optical properties, (iii) optical anisotropy and spin polarization effects in the ordered alloy, (iv) theory of reflectance-difference spectroscopy in ordered alloy, and (v) the ordering-induced changes on high energy E1 and E2 transitions. Specific, experimentally testable predictions are listed in the summary section.


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